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    12W 60 CHIP TRANSISTOR Search Results

    12W 60 CHIP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    12W 60 CHIP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a 1757 transistor

    Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112

    MOSFET mark J7

    Abstract: 78s12 RD12MVS 043mm transistor t06 19
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19

    mosfet marking 12W

    Abstract: 12w marking GRM40 RD12MVS1 T112
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112

    78s12

    Abstract: RD12MVS1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208

    Untitled

    Abstract: No abstract text available
    Text: TGA2216 0.1 – 3.0GHz 12W GaN Power Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare Product Features Functional Block Diagram          Frequency Range: 0.1 – 3.0GHz PSAT: 41dBm at PIN = 27dBm


    Original     		PDF TGA2216 41dBm 27dBm 34dBm 120mA 33dBm/tone: -30dBc -35dBc

    MAAPGM0078-DIE

    Abstract: No abstract text available
    Text: Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev A Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage 8-10V Operation ♦ MSAG Process Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both


    Original     		PDF MAAPGM0078-DIE MAAPGM0078-DIE

    AN3019

    Abstract: MAAP-000078-PKG001 MAAP-000078-SMB001 MAAP-000078-SMB004 MAAPGM0078-DIE AN3016
    Text: Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage 8-10V Operation ♦ MSAG Process Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias


    Original     		PDF MAAPGM0078-DIE MAAPGM0078-DIE AN3019 MAAP-000078-PKG001 MAAP-000078-SMB001 MAAP-000078-SMB004 AN3016

    Untitled

    Abstract: No abstract text available
    Text: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier Features The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the


    Original     		PDF 56-Pin MAX9741 MAX9741 MAX9741ETN+ MAX9741ETN

    ferrite bead tdk

    Abstract: 24v Audio amplifier class d EN55022B MAX941 MAX974 MAX9741 MAX9741ETN Class AB AMPLIFIER 4W
    Text: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier Features The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the


    Original     		PDF MAX9741 ferrite bead tdk 24v Audio amplifier class d EN55022B MAX941 MAX974 MAX9741ETN Class AB AMPLIFIER 4W

    Untitled

    Abstract: No abstract text available
    Text: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the


    Original     		PDF MAX9741

    transistor SMD 12W

    Abstract: smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74
    Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER


    Original     		PDF DB-915-12W PD55015S DB-915-12W transistor SMD 12W smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74

    DM6030HK

    Abstract: MAAP-000078-PED000 crossover AN3016 DM4030LD MAAP-000078-PKG001 MAAP-000078-SMB001 MAAP-000078-SMB004 MAAPGM0078-DIE
    Text: Amplifier, Power, 12W 2.0-6.0 GHz MAAP-000078-PED000 Rev — Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation


    Original     		PDF MAAP-000078-PED000 MAAPGM0078-PED000 10-mil DM6030HK MAAP-000078-PED000 crossover AN3016 DM4030LD MAAP-000078-PKG001 MAAP-000078-SMB001 MAAP-000078-SMB004 MAAPGM0078-DIE

    Untitled

    Abstract: No abstract text available
    Text: Amplifier, Power, 12W 2.0-6.0 GHz MAAP-000078-PED000 Rev A Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation


    Original     		PDF MAAP-000078-PED000 MAAPGM0078-PED000 10-mil

    Untitled

    Abstract: No abstract text available
    Text: MAAP-000078-PED000 Amplifier, Power, 12W 2.0—6.0 GHz M/A-COM Products Preliminary: Rev B Features ♦ 12 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation


    Original     		PDF MAAP-000078-PED000 MAAPGM0078-PED000 10-mil

    STA508A

    Abstract: STA509A 2sd2141 2sd2382 2sc3852 STA463C STA415A fn812 SDC09 smd 18w
    Text: Transistors and MOS FETs Transistors and MOS FETs by Application Application Page Igniters 2SD2141 58 57 Injectors 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 AT Automatic Transmissions 2SA1488 2SA1488A 50 52 Cruise controls 2SA1568 2SC4065 SLA8004 2SA1567


    Original     		PDF 2SD2141 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 2SA1488 2SA1488A 2SA1568 STA509A 2sc3852 STA415A fn812 smd 18w

    AT27273

    Abstract: DSA00344764 k3224 1206 cms diode cms capacitor gsm Booster 22 pf TEKELEC TEKELEC tekelec 630 VJ1206Y104KXAT
    Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 12 W min. with 12 dB gain over 875 - 915 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-915-12W PD55015S DB-915-12W AT27273 DSA00344764 k3224 1206 cms diode cms capacitor gsm Booster 22 pf TEKELEC TEKELEC tekelec 630 VJ1206Y104KXAT

    ATC100B

    Abstract: MAPLST2122-090CF transistor f1
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 MAPLST2122-090CF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		PDF MAPLST2122-090CF 28VDC, -45dB 096MHz) 2110MHz) ATC100B MAPLST2122-090CF transistor f1

    Untitled

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 2/18/2003 MAPLST2122-090WF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		PDF MAPLST2122-090WF 28VDC, -45dB 096MHz) 2110MHz)

    x-band power transistor

    Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
    Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding


    Original     		PDF

    x-band microwave fet

    Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
    Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP SIZE AND COST By Dr. Edward L. Griffin and D. Gary Lerude Aerospace & Defense ICs M/A-COM, a Tyco Electronics Company Introduction After some 20+ years of DoD technology development, the commercial wireless market has


    Original     		PDF

    VJ1206Y104KXAT

    Abstract: 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273
    Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER


    Original     		PDF DB-915-12W PD55015S DB-915-12W VJ1206Y104KXAT 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273

    transistor Comparison Tables

    Abstract: ZTX950 ZTX796A ZTX951 Zetex 12W Sot23 zetex fzt788b ZETEX ZBD949 fzt788b 1N4148 1N5820
    Text: Application Note 26 Issue 1 April 1996 Fast Charging Batteries with Zetex High Current PNP Transistors and Benchmarq Controller ICs Neil Chadderton Introduction Fast Charge Controller ICs The advances of digital technology and a waiting market have created a huge


    Original     		PDF ZTX949 320mV A/300mA ZTX951 300mV A/400mA ZTX788B ZTX976A, ZTX950 OT223 transistor Comparison Tables ZTX796A ZTX951 Zetex 12W Sot23 zetex fzt788b ZETEX ZBD949 fzt788b 1N4148 1N5820