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    XP1073-BD

    Abstract: xp1073 DM6030HK XP107
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    PDF P1073-BD 16-Feb-10 MIL-STD-883 XP1073-BD XP1073-BD xp1073 DM6030HK XP107

    XU1009-BD

    Abstract: RF Transistor Selection 26TX0555 26TX
    Text: 18.0-36.0 GHz GaAs MMIC Transmitter July 2007 - Rev 27-Jul-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain


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    PDF 27-Jul-07 MIL-STD-883 XU1009-BD XU1009-BD-000V XU1009-BD-EV1 XU1009 XU1009-BD RF Transistor Selection 26TX0555 26TX

    DM6030HK

    Abstract: MAAP-000077-SMB004 AN3016 DM4030LD MAAP-000077-PED000 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAPGM0077-DIE
    Text: Amplifier, Power, 13W 0.7-2.5 GHz MAAP-000077-PED000 Rev — Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation


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    PDF MAAP-000077-PED000 MAAPGM0077-PED000 10-mil DM6030HK MAAP-000077-SMB004 AN3016 DM4030LD MAAP-000077-PED000 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAPGM0077-DIE

    6OSC0460

    Abstract: DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1
    Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    PDF 17-Apr-07 Q1000-BD 100KHz MIL-STD-883 XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 XQ1000 6OSC0460 DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1

    DM6030HK

    Abstract: CMM0016 CMM0016-BD TS3332LD tanaka gold wire tanaka epoxy
    Text: 2.0-20.0 GHz GaAs MMIC 1W Power Amplifier October 2006 - Rev 13-Oct-06 CMM0016 Features Chip Diagram Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1dB: 29 dBm, Typ. @ 18 GHz


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    PDF 13-Oct-06 CMM0016 076mm CMM0016-BDis CMM0016-BD DM6030HK CMM0016 CMM0016-BD TS3332LD tanaka gold wire tanaka epoxy

    OC 74 germanium transistor

    Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
    Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


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    PDF P1020-BD 30-Jan-07 MIL-STD-883 XP1020-BD XP1020-BD-000V XP1020-BD-EV1 XP1020-BD OC 74 germanium transistor P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD-000V power transistor gaas

    CGB7015-BD

    Abstract: CGB7015-BD-000V DM6030HK TS3332LD
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7015-BD Features Chip Layout Low Operating Voltage: 5V 37.0 dBm Output IP3 @ 850 MHz 4.0 dB Noise Figure @ 850 MHz 23.0 dB Gain @ 850 MHz 21.1 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


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    PDF 04-Apr-07 CGB7015-BD CGB7015-BD CGB7015-BD-000V CGB7015-BD-000V DM6030HK TS3332LD

    CGB7016-BD

    Abstract: CGB7016-BD-000V DM6030HK TS3332LD tanaka gold wire current
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7016-BD Features Chip Layout Low Operating Voltage: 5V 34.0 dBm Output IP3 @ 850 MHz 3.8 dB Noise Figure @ 850 MHz 22.4 dB Gain @ 850 MHz 18.4 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


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    PDF 04-Apr-07 CGB7016-BD CGB7016-BD CGB7016-BD-000V CGB7016-BD-000V DM6030HK TS3332LD tanaka gold wire current

    M1000

    Abstract: No abstract text available
    Text: 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010


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    PDF 21-Nov-05 M1000 MIL-STD-883

    tanaka TS3332LD epoxy

    Abstract: No abstract text available
    Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    PDF 17-Apr-07 Q1000-BD 100KHz MIL-STD-883 XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 XQ1000 tanaka TS3332LD epoxy

    Untitled

    Abstract: No abstract text available
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD April 2008 - Rev 02-Apr-08 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


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    PDF 02-Apr-08 L1001-BD MIL-STD-883 XL1001

    varactor diode application

    Abstract: No abstract text available
    Text: 6.8-7.9 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1003-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    PDF 17-Apr-07 Q1003-BD 100KHz MIL-STD-883 XQ1003-BD XQ1003-BD-000V XQ1003-BD-EV1 XQ1003 varactor diode application

    P1015-BD

    Abstract: No abstract text available
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


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    PDF 10-Aug-07 P1015-BD MIL-STD-883 XP1015-BD-000V XP1015-BD-EV1 XP1015

    Untitled

    Abstract: No abstract text available
    Text: 4.5-10.5 GHz GaAs MMIC Receiver R1011-BD May 2008 - Rev 27-May-08 Features LO Integrated LNA, Mixer and LO Buffer Amp 1.6 dB Noise Figure 14.0 dB Conversion Gain BCB Coated Die 100% RF, DC and NF Testing VG3 BUF VD3 IF1 VG4 I VD2 IRM VG2 Q VD1 IF2 LNA General Description


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    PDF 27-May-08 R1011-BD XR1011-BD-000V XR1011-BD-EV1 XR1011

    Untitled

    Abstract: No abstract text available
    Text: 34.0-46.0 GHz GaAs MMIC Image Reject Mixer M1002 December 2005 - Rev 02-Dec-05 Features Chip Device Layout Fundamental Image Reject Mixer 7.0 dB Conversion Loss 20.0 dB Image Rejection +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883


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    PDF 02-Dec-05 M1002 MIL-STD-883

    P1006BD

    Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


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    PDF 11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia

    XA1000

    Abstract: XS1000-BD tanaka gold wire current
    Text: XS1000-BD 7.0-13.0 GHz GaAs MMIC 6-Bit Phase Shifter Rev 01-Sep-10 Features Chip Device Layout • 6-Bit Phase Shifter • LVCMOS/TTL Compatible Digital Control • 5.625° Least Significant Bit LSB • 25 dBm P1dB Input Compression • 100% On-Wafer RF and DC Testing


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    PDF XS1000-BD MIL-STD-883 01-Sep-10 XA1000 XS1000-BD tanaka gold wire current

    XS1001-BD

    Abstract: XA1000 XS1001 XS100 XS10-0 S1001-BD
    Text: 2.5-4.0 GHz GaAs MMIC 6-Bit Phase Shifter S1001-BD October 2009 - Rev 27-Oct-09 Features 6-Bit Phase Shifter LVCMOS/TTL Compatible Digital Control LSB = 5.625º 26 dBm Input P1dB Compression Point 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883


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    PDF 27-Oct-09 S1001-BD MIL-STD-883 XS1001-BD-000V XS1001-BD XA1000 XS1001 XS100 XS10-0

    CGB7011-BD

    Abstract: CGB7011-BD-000V DM6030HK TS3332LD 16720
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7011-BD Features Features 36.0 dBm Output IP3 @ 850 MHz 3.4 dB Noise Figure @ 850 MHz 21.7 dB Gain @ 850 MHz 21.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


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    PDF 04-Apr-07 CGB7011-BD CGB7011-BD CGB7011-BD-000V CGB7011-BD-000V DM6030HK TS3332LD 16720

    D1005

    Abstract: 22DSBA0423 DM6030HK TS3332LD XD1005-BD XD1005-BD-000V XD1005-BD-EV1
    Text: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    PDF 16-Jan-07 D1005-BD MIL-STD-883 XD1005-BD-000V XD1005-BD-EV1 XD1005-BD D1005 22DSBA0423 DM6030HK TS3332LD XD1005-BD-000V XD1005-BD-EV1

    44MPA0478

    Abstract: DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


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    PDF P1028-BD 17-Apr-07 MIL-STD-883 XP1028-BD-000V XP1028-BD-EV1 XP1028 44MPA0478 DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD

    Mimix Asia

    Abstract: phase shifter S1000-BD
    Text: 7.0-13.0 GHz GaAs MMIC 6-Bit Phase Shifter S1000-BD May 2008 - Rev 28-May-08 Features 6-Bit Phase Shifter LVCMOS/TTL Compatible Digital Control 5.625° Least Significant Bit LSB 25 dBm P1dB Input Compression 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883


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    PDF 28-May-08 S1000-BD XS1000-BD MIL-STD-883 XS1000-BD-000V Mimix Asia phase shifter

    p1014

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


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    PDF 01-Nov-06 APH478 P1014 XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000W XP1014-BD-000V XP1014-BD-EV1

    tanaka TS3332LD

    Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
    Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


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    PDF 12-May-08 P1032-BD MIL-STD-883 parD-000V XP1032-BD-EV1 XP1032-BD tanaka TS3332LD XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK