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    12N08 Search Results

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    12N08 Price and Stock

    Infineon Technologies AG IPT012N08NF2SATMA1

    MOSFET
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    DigiKey IPT012N08NF2SATMA1 Digi-Reel 2,773 1
    • 1 $6.15
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    IPT012N08NF2SATMA1 Cut Tape 2,773 1
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    Infineon Technologies AG IPT012N08N5ATMA1

    MOSFET N-CH 80V 300A 8HSOF
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    DigiKey IPT012N08N5ATMA1 Digi-Reel 1,975 1
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    Mouser Electronics IPT012N08N5ATMA1 2,342
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    Rochester Electronics IPT012N08N5ATMA1 9,752 1
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    TME IPT012N08N5ATMA1 1
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    Chip1Stop IPT012N08N5ATMA1 Cut Tape 1,886
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    Win Source Electronics IPT012N08N5ATMA1 15,200
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    Infineon Technologies AG IPTC012N08NM5ATMA1

    MOSFET N-CH 80V 40A/396A HDSOP
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    DigiKey IPTC012N08NM5ATMA1 Cut Tape 929 1
    • 1 $9.03
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    IPTC012N08NM5ATMA1 Digi-Reel 929 1
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    IPTC012N08NM5ATMA1 Reel 1,800
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    Avnet Americas IPTC012N08NM5ATMA1 Reel 1,800 1,800
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    Newark IPTC012N08NM5ATMA1 Cut Tape 1,457 1
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    Rochester Electronics IPTC012N08NM5ATMA1 3,018 1
    • 1 $4.47
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    Chip Stock IPTC012N08NM5ATMA1 369
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    Chip1Stop IPTC012N08NM5ATMA1 Cut Tape 1,800
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    Mallory Sonalert Products Inc PSR12N08AK

    SPEAKER 8OHM 500MW TOP PORT 74DB
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    DigiKey PSR12N08AK Bulk 16 1
    • 1 $2.74
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    • 100 $1.8179
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    Mouser Electronics PSR12N08AK 700
    • 1 $2.74
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    Newark PSR12N08AK Bulk 85
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    RS PSR12N08AK Bulk 1
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    Master Electronics PSR12N08AK 350
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    Sager PSR12N08AK 1
    • 1 $2.74
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    • 100 $2.74
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    Advanced Energy Industries Inc 2.5V12-N0.8

    DC DC CONVERTER 2500V 800MW
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    DigiKey 2.5V12-N0.8 Bulk 4 1
    • 1 $542.66
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    12N08 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12N08 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N08 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N08L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N08L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    12N08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12n08

    Abstract: 12N08l NTD12N08L NTD12N08
    Text: 12N08, 12N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive


    Original
    PDF NTD12N08, NTD12N08L 12N08 r14525 NTD12N08/D 12N08l NTD12N08L NTD12N08

    MTP15N06E

    Abstract: MTP12N10 XS630B1PAM12 MTP20N10 MTP15N06L MTP20N08 MTP20P06 MTP12N05 MTP12N05E MTP12N06
    Text: - f §y £ fr tt € ? Wl ± £ Vd s or Vg s fê Ta=25‘ C Ig s s Pd Id * /CH Vd g W. Vd s (V) (V) (V) (W) (A) (nA) (V) ( M A) MTP12NQ5 MOT N 50 ± 2 0 12 75 MTP12N05E MOT N 50 12 40 MTP12N06 MOT N 60 ± 2 0 12 75 12N08 MOT N 80 ± 2 0 12 75 M T P 12N08L


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    PDF MTP12N05 O-220AB MTP12N05E T0-220AB MTP12N06 MTP12N08 MTP20N08 MTP15N06E MTP12N10 XS630B1PAM12 MTP20N10 MTP15N06L MTP20P06

    36-14N08

    Abstract: VUO 36-16N08 36-12N08 36-18N08 3614N08 DIXYS 36-16N08
    Text: DIXYS VU0 36 Three Phase Rectifier Bridge v nsM V RRM V V 600 1200 1400 1600 1800 600 1200 1400 1600 1800 VUO VUO VUO VUO VUO 36-06N08 36-12N08 36-14N08 36-16N08 36-18N08 Test Conditions r v Tc = 85°C, module Tc = 62°C, module TVJ = 45°C; l2t V RRM Maximum Ratings


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    PDF 36-06N08 36-12N08 36-14N08 36-16N08 36-18N08 VUO 36-16N08 36-18N08 3614N08 DIXYS

    25-16N08

    Abstract: 25-12N08 25-14N08 25-06N08 09TS
    Text: 25 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VR S M VR R M V V 600 1200 1400 1600 1800 600 1200 1400 1600 1800 Type VUO VUO VUO VUO VUO i i i 25-06N08 25-12N08 25-14N08 25-16N08 25-18N08 Sym bol Test C onditions I Tc = 85°C, module Tr = 63°C, module


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    PDF 25-06N08 25-12N08 25-14N08 25-16N08 25-18N08 09TS

    36-16n08

    Abstract: No abstract text available
    Text: □ IX Y S VBO 36 Single Phase Rectifier Bridge V RSM V 1200 1400 1600 1800 V RRM 1200 1400 1600 1800 VBO VBO VBO VBO 36-12N08 36-14N08 36-16N08 36-18N08 ^dAVM Tc = 85°C , m odule Tc = 62°C , m odule Maximum Ratings 550 600 A A T"vj = Tvjm V R= 0 t = 10 ms 50 Hz , sine


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    PDF 36-12N08 36-14N08 36-16N08 36-18N08 36-16n08

    12052480

    Abstract: 12047937 JR 309
    Text: 15 14 12 9 10 1 1 8 7 6 5 Ï 4 c;YMRDI 3 D FF I N I T i n N 2 DWG STATUS M IS S IN G NUMBERS DATE THE NUMBER INSIDE THE SYMBOL CO CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER a T O T A L NO. OF SYM B O LS ON DRAWING 9 L A S T NO.


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    PDF 15JN99 15JN99 12JL99 RO100122 PBT-GF30-GRA RO100118 RO100172 30-REPELLET 12052480 12047937 JR 309

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


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    PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    12n08

    Abstract: 12N10
    Text: E l s G S-THOMSON 07E D | 7^2^537 0010104 0 7 3 C 1 76 01 •ï 3 5 !- i \ . 12N08 SEFM12N10 SEFPI2H08 SEFP12N10 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS •gm Pfot T"stg Ti - il N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate


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    PDF SEFM12N08 SEFM12N10 SEFPI2H08 SEFP12N10 20Ksi 12N10 12N08 SGSP361 C-326

    rfm12n

    Abstract: 12N08
    Text: T | H A R R I R FM 12N 08/12N 10 R FP12N 08/12N 10 S N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Features Packages T O -2 0 4 A A • 12A, 80V and 100V • rDS on = °-2 i1 • SOA is P o w er-D issipation Lim ited SOURCE • Nanosecond S w itching Speeds


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    PDF 08/12N FP12N RFM12N08 RFM12N10 RFP12N08 RFP12N10 92CS-35I56R1 rfm12n 12N08

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    F12N10L

    Abstract: f12N08L f12n08 f12n10 RFM12N08L RFP12N10L RFM10N12L RFM10N15L RFM12N10L RFP10N12L
    Text: h a r r R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L i s N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features TO-204AA BOTTOM VIEW • 10A, 120V and 150V • fDS(ON) = O-3« □RAIN (FLANGE) SOURCE • Design Optimized for 5V Gate Drives


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    PDF RFM10N12L/15L RFP10N12L/15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L F12N10L f12N08L f12n08 f12n10 RFM12N08L RFM12N10L

    F12N08L FET

    Abstract: F12N10 12N08l
    Text: 13 0 2 27 1 a0S17t,M TSt " H A S . . . . 12N08L/1OL 12N08L/10L H a r r is N -Chan nel Logic Level Power Field-Effect Transistors L 2 FET August 1991 Package Features TO-204AA BOTTOM VIEW • 12A, 80V and 100V • rDS(ON) = 0 2 n SOURCE f • Design Optimized for 5V Gate Drives


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    PDF a0S17t RFM12N08L/1OL RFP12N08L/10L O-204AA RFM12N08L RFM12N10L 92CS-372I6 92CS-572I7 92CS-372I8 F12N08L FET F12N10 12N08l