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    RFM10N15L Price and Stock

    Harris Semiconductor RFM10N15L

    10A, 150V, 0.3ohm, N-Channel, POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFM10N15L 109 1
    • 1 $2.28
    • 10 $2.28
    • 100 $2.14
    • 1000 $1.94
    • 10000 $1.94
    		Buy Now

    RFM10N15L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFM10N15L General Electric N-channel logic level power field-effect transistor (LL FET). 150V, 10A. Scan PDF
    RFM10N15L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM10N15L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFM10N15L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Text: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


    Original     		PDF AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036

    AN-7501

    Abstract: CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note eyrds terrpoon er ) OCI O frk geode setes VG = 9(4.5)V DRAIN CURRENT (ID) (A) bt witc g vems The FET 5 lt teve wer OST) utho The reduction in gate drive voltage is the result of halving the


    Original     		PDF 100nm AN-7501 CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240

    POWER MOSFET APPLICATION NOTE

    Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching


    Original     		PDF 100nm POWER MOSFET APPLICATION NOTE RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet

    100 amp 1000 volt GTO

    Abstract: AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note Pageode Useutines DRAIN CURRENT ID (A) VG = 9(4.5)V The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard


    Original     		PDF 100nm 100 amp 1000 volt GTO AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan     		PDF RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15

    F10N15L

    Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
    Text: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level


    OCR Scan     		PDF 3fl75Dfil RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N15L F10N12L RCA SOLID STATE F10N12L F10N12 F10N15 TA9530

    10N15L

    Abstract: P10N15L RFP10N12L
    Text: R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L gì h a r r is N - C h a n n e l L o g ic Level P o w e r F ie l d - E f f e c t T r a n s is to r s L 2 F ET August 1991 Package F e a tu re s T O -2 0 4 A A • 10A, 120V and 150V BOTTOM VIEW • rDS(0N) = 0 .3 fl


    OCR Scan     		PDF FP10N12L AN7254 AN-7260. 92CS-3BI64 10N15L P10N15L RFP10N12L

    2N6901

    Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
    Text: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*


    OCR Scan     		PDF 0G0S713 O-204 O-205 O-220 O-251 O-252 O-247 RFL2N05L RFM15N05L RFP4N05L 2N6901 2N6903 THOMSON DISTRIBUTOR RFL1N10L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L

    F12N10L

    Abstract: f12N08L f12n08 f12n10 RFM12N08L RFP12N10L RFM10N12L RFM10N15L RFM12N10L RFP10N12L
    Text: h a r r R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L i s N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features TO-204AA BOTTOM VIEW • 10A, 120V and 150V • fDS(ON) = O-3« □RAIN (FLANGE) SOURCE • Design Optimized for 5V Gate Drives


    OCR Scan     		PDF RFM10N12L/15L RFP10N12L/15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L F12N10L f12N08L f12n08 f12n10 RFM12N08L RFM12N10L

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40

    10N15L

    Abstract: No abstract text available
    Text: 4302271 QDS 4 7 5 5 T4 1 • HAS R FM 10 N 12L /15L R FP10N 12L /15L H a r r is N-Channel Logic Level Power Field-Effect Transistors L^FET August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • 10A, 120V and 150V • rDS(ON) = 0-3H SOURCE f • Design Optimized for 5V Gate Drives


    OCR Scan     		PDF FP10N RFM10N12L RFM10N15L RFP10N12L 10N12L, 10N15L, RFP10N12L, RFP10N15L 92CS-376S4 AN7254 10N15L