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    11N8 Search Results

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    11N8 Price and Stock

    Micro Commercial Components MSJPF11N80A-BP

    N-CHANNEL MOSFET, TO-220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MSJPF11N80A-BP Tube 5,000 1
    • 1 $3.9
    • 10 $2.583
    • 100 $3.9
    • 1000 $1.7675
    • 10000 $1.7675
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    Mouser Electronics MSJPF11N80A-BP 4,985
    • 1 $3.55
    • 10 $2.42
    • 100 $1.81
    • 1000 $1.77
    • 10000 $1.77
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    Micro Commercial Components MSJP11N80A-BP

    N-CHANNEL MOSFET, TO-220AB(H)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MSJP11N80A-BP Tube 4,992 1
    • 1 $4.76
    • 10 $3.151
    • 100 $4.76
    • 1000 $1.72391
    • 10000 $1.7125
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    Mouser Electronics MSJP11N80A-BP 5,000
    • 1 $4.16
    • 10 $3.12
    • 100 $2.24
    • 1000 $1.72
    • 10000 $1.72
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    Vishay Siliconix SIHD11N80AE-T4-GE3

    N-CHANNEL 800V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD11N80AE-T4-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.725
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    Vishay Siliconix SIHD11N80AE-GE3

    MOSFET N-CH 800V 8A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD11N80AE-GE3 Tube 2,659 1
    • 1 $2.53
    • 10 $2.53
    • 100 $1.16373
    • 1000 $0.88893
    • 10000 $0.725
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    Infineon Technologies AG SPA11N80C3XKSA1

    MOSFET N-CH 800V 11A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA11N80C3XKSA1 Tube 2,433 1
    • 1 $3.85
    • 10 $3.85
    • 100 $3.85
    • 1000 $1.35225
    • 10000 $1.34075
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    Newark SPA11N80C3XKSA1 Bulk 625 1
    • 1 $1.16
    • 10 $1.16
    • 100 $1.16
    • 1000 $1.16
    • 10000 $1.16
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    EBV Elektronik SPA11N80C3XKSA1 16 Weeks 500
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    Win Source Electronics SPA11N80C3XKSA1 12,400
    • 1 -
    • 10 -
    • 100 $1.5675
    • 1000 $1.3146
    • 10000 $1.3146
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    Find more 11N8 price and stock on Findchips.com

    11N8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11n80

    Abstract: 13N80 TEST14 D-68623
    Text: VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOSTMFET I D25 RDS on 11 A 0.95 Ω 13 A 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS


    Original     		PDF 11N80 13N80 O-247 11N80 13N80 O-204 O-204 TEST14 D-68623

    MOSFET 11N80

    Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
    Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 11N80 13N80 14N80 15N80 MOSFET 11N80 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs

    11N80

    Abstract: 13N80 IXFH13N80
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 11N80 13N80 11 13


    Original     		PDF 11N80 13N80 11N80 13N80 IXFH13N80

    Untitled

    Abstract: No abstract text available
    Text: Discontinued 9/98 - last order; 3/99 last ship 11N8645B8M 3.3V, Au, EDOMMDL24DSU-001022833. x 6411/11, 3.3V, Au, EDOMMDL24DSU-001022833. 11N8645C8M x 6412/10, 11N8735C8M 3.3V, Au, EDOMMDL24DSU-001022833. x 7212/10, 3.3V, Au, EDOMMDL24DSU-001022833. 11N8735B8M x 7211/11,


    Original     		PDF EDOMMDL24DSU-001022833. IBM11N8645C8M IBM11N8645B8M IBM11N8735C8M IBM11N8735B8M IBM11N8645B IBM11N8735B

    11n80c3

    Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80
    Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type 11N80C3 Package P-TO247


    Original     		PDF SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11n80c3 Q67040-S4440 11n80c SPW11N80C3 80011a 11n80

    11n80c3

    Abstract: SPA11N80C3
    Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3

    SPA11N80C3

    Abstract: No abstract text available
    Text: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N80C3 P-TO220-3-31 11N80C3 P-TO220-3-31 Q67040-S4439 SPA11N80C3

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS VGSM Continuous Transient


    Original     		PDF 11N80 13N80

    11n80c3

    Abstract: No abstract text available
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 11n80c3

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    11N80C3

    Abstract: No abstract text available
    Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3 11N80C3

    MOSFET 11N80c3

    Abstract: MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPW11N80C3 PG-TO247-3 11N80C3 MOSFET 11N80c3 MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R

    MOSFET 11N80c3

    Abstract: 11N80
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 MOSFET 11N80c3 11N80

    Untitled

    Abstract: No abstract text available
    Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C


    OCR Scan     		PDF 11N80 13N80 11N80 13N80 O-204 O-247 IXTM13N80

    MOSFET 11N80

    Abstract: 11N80 MOSFET 14n80 ns800 13n80
    Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C


    OCR Scan     		PDF 11N80 13N80 14N80 15N80 MOSFET 11N80 MOSFET 14n80 ns800

    11n80

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs ixfh/ixfm 11 nso IXFH/IXFM13 N80 Symbol Test Conditions VOSS Tj = 25°C to 150°C Maximum Ratings 800 V Voan Tj = 25°C to 150°C; R as = 1 MQ 800 V VGS V QSM Continuous T ransient ±20 ±30 V V U Tc -. 25 :,C 11N80 13N80 11 13 A


    OCR Scan     		PDF IXFH/IXFM13 11N80 13N80 13N80 O-247

    Untitled

    Abstract: No abstract text available
    Text: 11N8845HB Preliminary 8M x 72 Super EOS Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Extended Data Out Page Mode DIMMs • • Provides Chip-Kill ECC protection transparently to an existing Single Error Correction (SEC) system


    OCR Scan     		PDF IBM11N8845HB 8Mx72

    Untitled

    Abstract: No abstract text available
    Text: 11N8645B 11N8735B 11N8645C 11N8735C 8M x 64/72 DRAM MODULE Features • System Performance Benefits: • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module -Non buffered for increased performance -Reduced noise 35 V s s ^ c c P'ns


    OCR Scan     		PDF IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8Mx64, 8Mx72 SA14-4624-04

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    1N5A

    Abstract: SVI 3003 ds2 lio board 98 UTA ING lg crt tv circuit diagram DC iris schematic IN58 bl in78 tv haeir 1N4002
    Text: MIL-M-385I0/190C 22 October 1986 suPERstunrsMIL-M-38510/190B 10 July 1984 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS/ANALOG MULTIPLEXERS/DEMULTIPLEXERS WITH OVERVOLTAGE PROTECTION, MONOLITHIC SILICON, POSITIVE LOGIC This specification is approved for use by all Depart­


    OCR Scan     		PDF mil-m-385I0/190C MIL-M-38510/190B MIL-M-38510. 1N5A SVI 3003 ds2 lio board 98 UTA ING lg crt tv circuit diagram DC iris schematic IN58 bl in78 tv haeir 1N4002

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60