MYGTM01210BZN
Abstract: mygtm01210 50ZL1000M EKZE160 Nippon capacitors
Text: MYGTM01210BZN Application 1 DC-DC Converter Application Manual MYGTM01210BZN 1. Features ･Single output/SIL/non-isolated type DC-DC converter with high power 120W . ･High efficiency and small size have been achieved. ･Wide input range（17.0V to 40.0V）.
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MYGTM01210BZN
MYGTM01210BZN
range17
mygtm01210
50ZL1000M
EKZE160
Nippon capacitors
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S5N02
Abstract: MMSF5N02HD
Text: MOTOROW SEMICONDUCTOR TECHNICAL DATA Product Preview HDTMOSTM E-FETM High Energy Power FET N=Channel Enhancement=Mode Silicon This advanced high-cell density HD~OS E-FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source
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MMSF5N02HD
S5N02
MMSF5N02HD
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EUL-150-XL
Abstract: MPD6S022S HP34401A RM-101 eul150 on 3055v EUL150XL HP6621A eul-150
Text: MPD6S022S Application 1 DC-DC Converter Application Manual MPD6S022S Features ･ 3.0-5.5V input voltage. ･ High efficiency 95% [email protected]/1A and small size and floor space saving. ･ Wide output voltage 1.1～3.6V range. (Output voltage is adjustable.)
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MPD6S022S
MPD6S022S
EUL-150-XL
HP34401A
RM-101
eul150
on 3055v
EUL150XL
HP6621A
eul-150
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MM74C14N
Abstract: No abstract text available
Text: HighCMV ANALOG DEVICES HighPerformance lsolation Amplifier FEATURES HighCMV lsolation:t5000V pk, 10msPulse;12500Vdc Continuous HighCMR: 110dBmin with SkSl tmbalance Low Nonlinearity:0,05%@ 10V pk.pk Ouqut High Gain stability: to.ootswf c,!o.oo1o/ol1o00hours
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t5000V
10msPulse
2500V
110dBmin
oo1o/ol1o00hours
100VA/
Model286f)
100V4/
284J1
MM74C14N
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A44E
Abstract: C22F C55F cs5f C202F C14F C11F C12F C201F C203F
Text: TECHNICA L IN FO R M A TIO N Tempera^ uiire Coefficients Type Capacitance pF C54E C77E 33000 - 50000 50000 - 10OOCO Capacitor Tolerance ± c 500 V O LT W O R K IN G 5-2-I-0.5 5-2-1-0.5 I X b X d max mm a mm 31.7 X 25.4 X 10.2 4 4 .2 x 3 2 .8 x 8 .5 25.4
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C55H/F
C77H/
C55FA
C77FA
A44E
C22F
C55F
cs5f
C202F
C14F
C11F
C12F
C201F
C203F
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41256p
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TMM4 1 1 0OOC-10 TMM4 1 10OOC-12 1 ,0 48 ,5 7 6 WORD 1 BIT DYNAMIC RAM X SILICON MO NO LITHIC N-CHANNEL SILICON GATE MOS PRELIMINARY DESCRIPTION The T M M 4 1 1 0 0 0 C is th e n ew g e n e ra tio n d y n a m ic RAM organized 1 , 0 4 8 , 5 7 6 w o rd s by 1 bit,
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0OOC-10
10OOC-12
41256P.
10OOC
41256p
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nec uPD7811
Abstract: capacitor MKL uPD7811 stc 12MHz 00111R PD7811 eprom 2732A 153 SP-J PD78PG11 UP*7811
Text: NEC ¿/PD78PG11 HIGH-END, 8-BIT, SINGLE-CHIP NMOS MICROCOMPUTER WITH PIGGYBACK EPROM NEC Electronics Inc. D e scrip tio n Pin C o n fig u ra tio n T h e N E C ¿/PD78PG11 is a prototyping device used to emulate the m asked-RO M /UPD7811. Th e user can insert a standard EP R O M 2732A or 2764 into the
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uPD78PG11
/PD78PG11
/UPD7811.
theyi/PD78PG11.
the/uPD7811.
16-bit
nec uPD7811
capacitor MKL
uPD7811
stc 12MHz
00111R
PD7811
eprom 2732A
153 SP-J
PD78PG11
UP*7811
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1000CLP
Abstract: No abstract text available
Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000CL
KM41C1000CL
576x1
KM41C1000CL-6
KM41C1000CL-7
KM41inued)
20-LEAD
1000CLP
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C614
Abstract: No abstract text available
Text: DC Solid S tate Relow -«as*-TE LEDYNE RELAYS Commercial DIP Solid Stale Relays Part Number Relay C61 $Gi*i s OPTICALLY ISOLATED 0.3 to 1.0 A Description C61 Solid State Relay with Term inals for Through Hole Mount SC61 Solid State Relay with Term inals for Surface Mount
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10OOC
C614
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681000CLP
Abstract: P55n 681000C 2U27 0-00C M681000CL
Text: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated
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KM681000C
128Kx8
128Kx8
32-DIP,
32-SOP,
32-TSOP
KM681000CL
681000CLP
P55n
681000C
2U27
0-00C
M681000CL
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Untitled
Abstract: No abstract text available
Text: KM44V1OOOC/CL/CLL CMOS DRAM 1M x 4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 4 V 1 0 0 0 C /C L /C L L is a high sp ee d • Performance range: K M 4 4 V 1 0 0 0 C /C L /C L L -6 tR A C tC A C tR C 60ns
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KM44V1OOOC/CL/CLL
20-LEAD
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A44E
Abstract: C14F A12E C22F A33E C101E cs5f A15E C12E C14E
Text: I 'E' Finish Resin Encapsulated I Tem perature Range — 55°C to + 1 0 0 °C Type Capacitance pF C5E C6E C12E A12E C14E A15E A25E C101E C201E C202E C203E C204E A33E C33E C35E 271 681 2001 2001 2001 5 600(3 1501 4001 10001 - 680 1500 3500 3500 3500 6000
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C101E
C201E
C202E
C203E
C204E
C55H/F
C77H/
C55FA
C77FA
A44E
C14F
A12E
C22F
A33E
cs5f
A15E
C12E
C14E
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temperature and humidity sensor SHT1
Abstract: SHT7x Application Mill-Max 851-93-004-20-001 SHT11 application note SHT11 humidity sensor SHT1X SHT11 application SHT75 DIN-50021 DIN-50021SS
Text: i - S€N5IRION T H E S eiS iS O R C O M P A N Y S H T 1x / S H T 7x Humidity & Temperature Sensmitter Relative humidity and temperature sensors Dew point Fully calibrated, digital output No external components required Ultra low power consumption Surface mountable or 4-pin fully interchangeable
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CH-8052
temperature and humidity sensor SHT1
SHT7x Application
Mill-Max 851-93-004-20-001
SHT11 application note
SHT11
humidity sensor SHT1X
SHT11 application
SHT75
DIN-50021
DIN-50021SS
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TMM41256P
Abstract: tmm41256 TMM411000C-10 TMM411000C-12 TMM41 aaag
Text: TOSHIBA MOS MEMORY PRODUCTS 10OOC-10 TMM411000C-12 1 ,0 4 8 ,5 7 6 W O R D X 1 BIT D Y N A M IC R A M S IL IC O N M O N O L IT H IC N -C H A N N E L S IL IC O N G A TE M O S PR ELIM IN A R Y D E S C R IP TIO N The T M M 4 1 1 0 0 0 C is th e new g e n e ra tio n
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TMM411000C
TMM41256P.
TMM41
TMM411000C-10
TMM411000C-12
54TYF
TMM41256P
tmm41256
TMM411000C-12
aaag
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5110 OOC/CL_ E2G0009-17-41 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM 511000C/CL is a 1,048,576-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM511OOOC/ CL achieves high integration, high-speed operation, and
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MSM5110
576-Word
E2G0009-17-41
511000C/CL
MSM511OOOC/
MSM511000C/CL
26/20-pin
20-pin
MSM511OOOCL
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