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    Samsung Semiconductor KM681000CLT-7L

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    Samsung Semiconductor KM681000CLG-7

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    Samsung Semiconductor KM681000CLG-7L

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    Samsung Semiconductor KM681000CLG-5L

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    Samsung Semiconductor KM681000CLP-7L

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    KM681000CL Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM681000CL Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CL Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLG-5 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLG-5L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLG-7 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLG-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLGI-7 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLGI-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLI Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLI Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLI-L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CL-L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CL-L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLP-5 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLP-5L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLP-7 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLP-7L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLR-5L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLR-7L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000CLRI-7L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF

    KM681000CL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    km681000clg-5l

    Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
    Text: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA


    Original     		PDF KM681000C 100ns 0820R) km681000clg-5l KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L

    gci 24V 12V

    Abstract: Siemens diode SSi P22 240 schematic diagram samsung led GH 17 LS Voltage Regulator SOT-23-5 usb3 transceiver router board r52 hn AM22V10
    Text: Am186TMCC/CH/CU Microcontroller Customer Development Platform User’s Manual Order #22002A Am186TMCC/CH/CU Microcontroller Customer Development Platform User’s Manual 1998 by Advanced Micro Devices, Inc. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or


    Original     		PDF Am186TMCC/CH/CU 2002A RJ-45 gci 24V 12V Siemens diode SSi P22 240 schematic diagram samsung led GH 17 LS Voltage Regulator SOT-23-5 usb3 transceiver router board r52 hn AM22V10

    zener c53 hp

    Abstract: C105 Diode zener 150v 1w RM73B3A C92 diode flyback samsung flyback transformer samsung BLM31P500SPB C81 diode R169
    Text: Am186CC Customer Dev. Platform Main Board - Miscellaneous Revised: Tuesday, September 22, 1998 Revision: 2.0 (C) Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials September 22,1998


    Original     		PDF Am186CC HM00-98519 DS34C87TM DS34C86TM 74ACT125 M4-128/64-15YC SP211CT TLC7733ID 74ACT02 7C1041-25VC zener c53 hp C105 Diode zener 150v 1w RM73B3A C92 diode flyback samsung flyback transformer samsung BLM31P500SPB C81 diode R169

    z5 smd zener diode code D5

    Abstract: AT29C010-90ns a52 zener diode PMC-970285 "red led" 5mm 33164 A54 ZENER atmel 928 transistor WTs smd MC68HC16
    Text: PM5342 SPECTRA-155 REFERENCE DESIGN REFERENCE DESIGN PMC-970285 ISSUE 1 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORK REFERENCE DESIGN SNOW BOARD PM5342 SPECTRA-155 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORKS REFERENCE DESIGN (SNOW BOARD) REFERENCE DESIGN


    Original     		PDF PM5342 SPECTRA-155 PMC-970285 PM5342 z5 smd zener diode code D5 AT29C010-90ns a52 zener diode PMC-970285 "red led" 5mm 33164 A54 ZENER atmel 928 transistor WTs smd MC68HC16

    "yellow led" 5mm

    Abstract: yellow led 5mm "red led" 5mm a39 zener diode HEADER 5X2 a88 zener mc68hc16 33164 atmel 928 smd diode B3E
    Text: PM5342 SPECTRA-155 REFERENCE DESIGN REFERENCE DESIGN PMC-970285 ISSUE 1 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORK REFERENCE DESIGN SNOW BOARD PM5342 SPECTRA-155 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORKS REFERENCE DESIGN (SNOW BOARD) REFERENCE DESIGN


    Original     		PDF PM5342 SPECTRA-155 PMC-970285 PM5342 "yellow led" 5mm yellow led 5mm "red led" 5mm a39 zener diode HEADER 5X2 a88 zener mc68hc16 33164 atmel 928 smd diode B3E

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    diode zener c72

    Abstract: 6x2 berg connector RM73B3A R268 zener c53 hp bc p28 diode TSOP48 YAMAICHI SOCKET R271 SMT M4 diode 150V ZENER 1W
    Text: Am186CC Customer Dev. Platform Main Board - Miscellaneous Revised: Friday, February 05, 1999 Revision: 2.1 (C) Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials February 11,1999


    Original     		PDF Am186CC SPARE14 SPARE20 256Kx16 256X16 SOIC-14 SOIC-20 SOJ-44 SOJ-40 SSOP-14 diode zener c72 6x2 berg connector RM73B3A R268 zener c53 hp bc p28 diode TSOP48 YAMAICHI SOCKET R271 SMT M4 diode 150V ZENER 1W

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 br1632 br1225

    KM681000CLP-7L

    Abstract: KM681000CLT-5L km681000clg-5l km681000clg-7 KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L KM681000CLGI-7
    Text: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA


    Original     		PDF KM681000C 100ns 0820R) KM681000CLP-7L KM681000CLT-5L km681000clg-5l km681000clg-7 KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L KM681000CLGI-7

    BR1632 safety

    Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    Untitled

    Abstract: No abstract text available
    Text: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.


    OCR Scan     		PDF KM681000C 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000C KM681000CLT-5L 32-TSOP KM661000CLRI-7L

    681000CLP

    Abstract: P55n 681000C 2U27 0-00C M681000CL
    Text: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated


    OCR Scan     		PDF KM681000C 128Kx8 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000CL 681000CLP P55n 681000C 2U27 0-00C M681000CL

    C-4555

    Abstract: c4555 32TSOP
    Text: M E M O R Y ICs FUNCTION G UIDE 1. Low Power SRAM 5V Operation Density 256K 512K 1M Org. Product No' 32K x 3 64K x 3 128K x 8 6 4 K x 16 4M 512K x 8 Icc2/lsbl Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 C 45/55/70 70/100 70/20 28-TSOP(l) Reverse KM62256CLE


    OCR Scan     		PDF KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CU-L 28-TSOP 28-SOP 32-TSOP C-4555 c4555 32TSOP

    KM616U1000BL-L

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI


    OCR Scan     		PDF KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L 28-TSOP 28-DIP 28-SOP KM68512CL KM616U1000BL-L

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b

    Untitled

    Abstract: No abstract text available
    Text: KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft Novem ber 22th 1995 Design target 0.1 First revision - Seperate read and write at Icc, Icci Icc = Ic c i -> Read : 15mA, Write : 35m A


    OCR Scan     		PDF KM681000C 100ns 0820F) 0820R)

    km681000clg-7l

    Abstract: KM681000CLP-7 KM681000CLT-5L KM681000CLP-7L KM681000CLG KM681000C
    Text: KM681000C Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES G ENERAL DESCRIPTION • Process Technology: Q.4ftm C M O S • Organization: 128Kx8 • Power Supply Voltage : Single 5.0V±1Q% • Low Data Retention Voltage : 2V Mln • three state output and TTL Compatible


    OCR Scan     		PDF KM681000C 128Kx8 32-DIP-600, 32-SOP-52S, 32-TSOP1-0820F/R KM681000CL KM6B1000CL-L KM681000CLI km681000clg-7l KM681000CLP-7 KM681000CLT-5L KM681000CLP-7L KM681000CLG

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference