24nm60n
Abstract: PowerFLAT 24nm6 STL24NM60N
Text: STL24NM60N N-channel 600 V, 0.200 Ω, 16 A PowerFLAT 8x8 HV MDmesh™ II Power MOSFET Preliminary data Features Type VDSS @ TJmax RDS(on) max ID STL24NM60N 650 V < 0.215 Ω 16 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL24NM60N
24nm60n
PowerFLAT
24nm6
STL24NM60N
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Untitled
Abstract: No abstract text available
Text: Product Specification 108-57273 05-JAN-2011 Rev. C Wire To Board Serial, Pitch 1.25mm 1. SCOPE 1.1. CONTENTS This specification covers the performance, tests and quality requirements for the Wire To Board Serial connector. 1.2. QUALIFICATION When tests are performed on the subject product line, the procedures specified in AMP 109 series
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05-JAN-2011
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200F
Abstract: 300F 400F SFG10
Text: SFG10SD200F ~ SFG10SD600F Voltage 200 to 600 V 10 Amp Super Fast Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies and halogen free ITO-220Y FEATURES Fast switching for high efficiency Low forward voltage drop
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SFG10SD200F
SFG10SD600F
ITO-220Y
MIL-STD-202
05-Jan-2011
200F
300F
400F
SFG10
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SMG2325P
Abstract: MosFET
Text: SMG2325P -3.6 A, -20 V, RDS ON 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure
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SMG2325P
SC-59
05-Jan-2011
SMG2325P
MosFET
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24nm60n
Abstract: STW24NM60 STW24NM60N STF24NM60N 24nm6 STI24NM60N 24NM60
Text: STF24NM60N, STI24NM60N STP24NM60N, STW24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh II Power MOSFET TO-220FP, I2PAK, TO-220 and TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max. ID STF24NM60N 650 V < 0.19 Ω 17 A STI24NM60N 650 V < 0.19 Ω
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STF24NM60N,
STI24NM60N
STP24NM60N,
STW24NM60N
O-220FP,
O-220
O-247
STF24NM60N
STP24NM60N
24nm60n
STW24NM60
STW24NM60N
24nm6
24NM60
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SMG2328NE
Abstract: MosFET
Text: SMG2328NE 6.3 A, 20 V, RDS ON 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to
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SMG2328NE
SC-59
SC-59
05-Jan-2011
SMG2328NE
MosFET
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PDF
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SMG2317P
Abstract: JAN p-channel mosfet transistor low power
Text: SMG2317P -0.9 A, -30 V, RDS ON 300 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density process. Low RDS(on) assures minimal power loss
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SMG2317P
SC-59
05-Jan-2011
SMG2317P
JAN p-channel mosfet transistor low power
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Untitled
Abstract: No abstract text available
Text: SFG10SD200 ~ SFG10SD600 Voltage 200 to 600 V 10 Amp Super Fast Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220Y FEATURES Fast switching for high efficiency Low forward voltage drop High current capability
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SFG10SD200
SFG10SD600
O-220Y
MIL-STD-202
05-Jan-2011
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PDF
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TO-220Y
Abstract: SFG10
Text: SFG10S200 ~ SFG10S600 Voltage 200 to 600 V 10 Amp Super Fast Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220Y FEATURES Fast switching for high efficiency Low forward voltage drop High current capability
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SFG10S200
SFG10S600
O-220Y
MIL-STD-202
05-Jan-2011
TO-220Y
SFG10
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PDF
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Untitled
Abstract: No abstract text available
Text: STN1NK60Z, STQ1NK60ZR-AP N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features VDS RDS on max ID 600 V 15 Ω 0.3 A Order codes STN1NK60Z 4 1 2 STQ1NK60ZR-AP 3 SOT-223
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STN1NK60Z,
STQ1NK60ZR-AP
OT-223
STN1NK60Z
OT-223
AM01476v1
DocID9509
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PDF
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Untitled
Abstract: No abstract text available
Text: STL24NM60N N-channel 600 V, 0.200 Ω typ., 16 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Datasheet − production data Features 6 6 6 Order code %RWWRPYLHZ VDS @ TJmax RDS on max STL24NM60N 650 V * ID 16 A (1) < 0.215 Ω 1. The value is rated according to Rthj-case
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STL24NM60N
DocID18363
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24NM60N
Abstract: STF24NM60N STP24NM60N to-220 equivalent
Text: STF24NM60N STP24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh II Power MOSFET TO-220 and TO-220FP Features Order codes VDSS @Tjmax RDS(on) max. STF24NM60N 650 V < 0.19 Ω 17 A STP24NM60N 650 V < 0.19 Ω 17 A ID 3 • 100% avalanche tested ■ Low input capacitance and gate charge
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STF24NM60N
STP24NM60N
O-220
O-220FP
O-220
24NM60N
STF24NM60N
STP24NM60N
to-220 equivalent
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ST 9509
Abstract: 1NK60Z 9509 STQ1NK60ZR-AP 1nk60 Power MOSFET SOT-223 STN1NK60Z 1nk60zr A1 SOT-223 MOSFET
Text: STN1NK60Z STQ1NK60ZR-AP N-channel 600 V, 13 Ω, 0.8 A TO-92, SOT-223 Zener-protected SuperMESH Power MOSFET Features Order codes STQ1NK60ZR-AP STN1NK60Z VDSS RDS on ID 600 V < 15 Ω 0.3 A • 100% avalanche tested ■ Extremely high dv/dt capability ■
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STN1NK60Z
STQ1NK60ZR-AP
OT-223
ST 9509
1NK60Z
9509
STQ1NK60ZR-AP
1nk60
Power MOSFET SOT-223
STN1NK60Z
1nk60zr
A1 SOT-223 MOSFET
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STL24NM60N
Abstract: No abstract text available
Text: STL24NM60N N-channel 600 V, 0.200 Ω, 16 A PowerFLAT 8x8 HV MDmesh™ II Power MOSFET Features Type VDSS @ TJmax RDS on max ID STL24NM60N 650 V < 0.215 Ω 16 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case • 100% avalanche tested
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STL24NM60N
STL24NM60N
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TYCO PBT-GF20
Abstract: AMP PBT-GF20 PBT-GF20 Tyco 108-18 PBT-GF-20 1703020
Text: TYCO ELEC TR O N IC S C O RPORATIO N. LOC 967650 CODING A Kodierung A R E V AI AS wie D I ST P LTR D E S C R I P T I ON DATE DWN APVD BESEHREIBUNG PROJEKT gezeichnet I S I O N S AENDERUNGEN NR. : NEW neue A A92-52080 D R A W ING Z e ichnung A1 NOTE A2 DRAW ING
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OCR Scan
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IGHT2004
A92-52080
05JAN2004
13APR2004
E-10-002780
05JAN2011
PBT-GF20
TYCO PBT-GF20
AMP PBT-GF20
Tyco 108-18
PBT-GF-20
1703020
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