IRFP4332
Abstract: IRFPE30 IRFP4332PbF
Text: PD - 97100A IRFP4332PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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7100A
IRFP4332PbF
O-247AC
IRFP4332
IRFPE30
IRFP4332PbF
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Untitled
Abstract: No abstract text available
Text: PD - 97099A IRFB4332PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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7099A
IRFB4332PbF
O-220AB
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IRFB4332PBF
Abstract: IRF1010 IRFB4332
Text: PD - 97099A IRFB4332PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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7099A
IRFB4332PbF
O-220AB
IRFB4332PBF
IRF1010
IRFB4332
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map 3204
Abstract: VS80E2A685M-TS0F KS80E1H176M-TR F44F VS80R2J304M-TR ks capacitors
Text: MARUWA GENERAL CATALOG HIGH CAPACITANCE ¥ HIGH VOLTAGE STACKED TYPES [ KS ¥ VS Series ] a Features • The mounting surface is small. • Compact and large capacity. • Excellent temperature cycling. • Non-polar. • RoHS Compliant. a Applications dielectric
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25VDC
50VDC
100VDC
250VDC
630VDC
16VDC
100VD
map 3204
VS80E2A685M-TS0F
KS80E1H176M-TR
F44F
VS80R2J304M-TR
ks capacitors
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MOSFET "CURRENT source"
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3710 Preliminary Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or
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UF3710
UF3710
UF3710L-TA3-T
UF3710G-TA3-T
O-220
QW-R203-036
MOSFET "CURRENT source"
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3710 Preliminary Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or
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UF3710
UF3710
O-220
UF3710L-TA3-T
UF3710G-TA3-T
QW-R203-036
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60K-MT
12N60K-MT
QW-R502-B06
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N70K-MK Power MOSFET Preliminary 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70K-MK is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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3N70K-MK
3N70K-MK
QW-R205-012
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable to be
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12P10
12P10
12P10L-TM3-T
12P10G-TM3-T
12P10L-TN3-R
12P10G-TN3-R
12P10L-TQ2-R
12P10G-TQ2-R
QW-R502-262
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N90Z Preliminary Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90Z provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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3N90Z
3N90Z
3N90ZL-TF1-T
3N90ZG-TF1-T
2013at
QW-R502-913
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Preliminary Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60K-MT
12N60K-MT
O-220F2
QW-R502-B06
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POWER MOSFET Rise Time
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3710 Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or
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UF3710
UF3710
O-220
O-263
UF3710Lues
QW-R203-036
POWER MOSFET Rise Time
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marking 724 diode sot-363
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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1N60Z
1N60Z
QW-R502-724
marking 724 diode sot-363
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode
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12N70
12N70
QW-R502-220
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
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12N90
12N90
QW-R5020-593.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary Power MOSFET 10A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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10N90
UTC10N90
10N90
O-247
QW-R502-502
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10N70
Abstract: MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70
10N70
O-220F
O-220F1
QW-R502-572
MOSFET 700V 10A
10N70L
mosfet 350v 10A
700v 10A mosfet
10N70L-TF1-T
700V mosfet driver
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utc 3580
Abstract: 10N90
Text: UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary 10A, 900V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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10N90
O-220
UTC10N90
10N90
O-220F1
O-247
QW-R502-502
utc 3580
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power
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12N70K-MT
12N70K-MT
QW-R205-028
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
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3N90
Abstract: 3N90L 400v 3a ultra fast recovery diode MOSFET 400V TO-220 MOSFET 900V TO-220
Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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3N90L-TA3-T
3N90G-TA3-T
3N90L-TF3-T
3N90G-TF3-T
3N90L-TQ2-T
3N90G-TQ2-T
3N90L-TQ2-R
3N90G-TQ2-R
QW-R502-290
3N90
3N90L
400v 3a ultra fast recovery diode
MOSFET 400V TO-220
MOSFET 900V TO-220
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
O-220F
O-220F1
QW-R502-743
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12N60l
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
12N60l
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65A Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand
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7N65A
7N65A
QW-R502-585
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