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    1SAM

    Abstract: No abstract text available
    Text: ZVP2120Z SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET * PARTMARKING DETAIL - P10 FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVP2120G DATASHEET ABSOLUTE M AXIM UM RATINGS PARAMETER SYM BOL » VALUE ' UNIT -200 -0.17 -1.2 Drain-Source Voltage Continuous Drain Current @ Tamb=25°C


    OCR Scan     		PDF ZVP2120G ZVP2120Z TamtF25 -150mA, -150mA 1SAM

    Diode Mark N10

    Abstract: BZV49 diode GF M
    Text: SOT89 NPN SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter V CE sa O Max h -E Type v CBO v CEO ^C(cont P lo t V V mA W FCX2369A 40 15 500 1.0 40/120 FCX2369 40 15 500 1.0 40/120 M in/M ax at lc / V ce m A / Volts Part Mark Code Volts at l c / Iß


    OCR Scan     		PDF FCX2369A FCX2369 BZV49 BAW79D BAW79C BAW79B BAW79A 200mA, BAW78D BAW78C Diode Mark N10 diode GF M

    BAW78C

    Abstract: No abstract text available
    Text: SOT89 NPN SW ITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter Type hFE VcBO V VCEO V lc cont mA P to t FCX2369A 40 15 500 FCX2369 40 15 500 Part Mark Code v CE(sat) M a x M in/M ax at lc / VCE m A / Volts Volts at lc / lB mA 1.0 40/120 10/1 0.2


    OCR Scan     		PDF FCX2369A FCX2369 BZV49 ZVN2120Z ZVNL120Z BST86 ZVN2106Z ZVN4206Z ZVP2120Z ZVP2106Z BAW78C