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Zetex / Diodes Inc ZTX652STZ Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
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ComSIT Europe	ZTX652STZ		1,120			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Ferraz Shawmut ZTX652 INSTOCK
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ZTX652 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
ZTX652	Philips Semiconductors	Rectifier diodes ultrafast, rugged	Original	PDF
ZTX652	Zetex Semiconductors	NPN SILICON PLANAR(MEDIUM POWER TRANSISTORS)	Original	PDF
ZTX652	Zetex Semiconductors	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR	Original	PDF
ZTX652	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF
ZTX652	Ferranti Semiconductors	Super E-Line Transistors 1982	Scan	PDF
ZTX652	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
ZTX652	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
ZTX652	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
ZTX652	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
ZTX652	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
ZTX652	Zetex Semiconductors	Quick Reference Guide (Discrete Semiconductors) 1991	Scan	PDF
ZTX652K	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
ZTX652K	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
ZTX652L	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

ZTX652L	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
ZTX652M	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
ZTX652M	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
ZTX652S	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
ZTX652S	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

ZTX652 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ZTX653 Abstract: ztx652 Zetex ZTX653 Text: ZTX652 Not Recommended for New Design Please Use ZTX653 ZTX652 ZTX653 ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER	Original	PDF	ZTX652 ZTX653 ZTX653 100lector IC/10 Zetex ZTX653
ZTX653 Abstract: ZTX653 equivalent ZTX652 equivalent ZTX652 DSA003771 Text: ZTX652 ZTX653 ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER ZTX652 SYMBOL MIN. TYP. Transition Frequency fT Switching Times	Original	PDF	ZTX652 ZTX653 500mA, 100mA, 100MHz ZTX653 ZTX653 equivalent ZTX652 equivalent ZTX652 DSA003771
ztx653 Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX652 ZTX653 ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX652 ZTX653 UNIT	Original	PDF	ZTX652 ZTX653 IC/10 100ms ztx653
Untitled Abstract: No abstract text available Text: ZTX652 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80è V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300	Original	PDF	ZTX652 Freq140M StyleTO-92
Philips stepper motor Abstract: fluorescent 12v circuit fluorescent tube 12v zvn4206 application TL8W zvn4206 transistor ztx fluorescent tube ZVN4206C ZVN4206G Text: Design Note 7 Issue 2 June 1995 Printer Stepper Motor Drivers Design Note 8 Issue 2 June 1995 8W, 12V Fluorescent Lamp 2ms/div +12V W4 W2 270 1W Current 0.5A/div W5 W1 0.015uF 250V POLYESTER + W3 + 2.2 1/4W Q2 + Control Logic Q1 8W TUBE Eg. SYLVANIA F8W/W	Original	PDF	015uF TL8W/33 20v/div 068uF ZVN4206C ZTX652 20kHz Philips stepper motor fluorescent 12v circuit fluorescent tube 12v zvn4206 application TL8W zvn4206 transistor ztx fluorescent tube ZVN4206C ZVN4206G
mn2510 Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference" Text: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @	Original	PDF	OT-223 STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 mn2510 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
MRF212 Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603 Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413	Original	PDF	OT-161 92var StR-10 OT-123var O-220 MRF212 b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
ZTX650 Abstract: ZTX651 FERRANTI SE60 transistor a7n ZTX652 ZTX653 Scans-00107861 Text: FERRANTI $ semiconductors ZTX650 ZTX651 ZTX652 ZTX653 N PN S ilic o n P lan ar M edium P o w e r T ra n sisto rs FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • • • • • • • • 2A continuous lc Excellent gain characteristics to 2A High V CE0: up to 100 volts	OCR Scan	PDF	ZTX650 ZTX651 ZTX652 ZTX653 100ms FERRANTI SE60 transistor a7n ZTX653 Scans-00107861
BC337B Abstract: m 60 n 03 g10 BC327C Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA	OCR Scan	PDF	ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 BC337B m 60 n 03 g10 BC327C
ztx653 Abstract: 2TX650 SE 130 ztx651 ZTX652 ztx650 Text: NPN Silicon Planar Medium Power Transistors Z T X 650 ZTX651 ZTX652 ZTX653 FEATURES • 1 .5 W p o w e r d issipation a t T amb = 2 5 ° C * • 2 V co n tinu o u s ic • Excellent gain ch a ra cte ristics to 2A • High V CE0: up to 10 0 V • L o w sa tu ra tio n voltages	OCR Scan	PDF	ZTX651 ZTX652 ZTX653 ZTX650 SE131 ztx653 2TX650 SE 130
ZTX650 Abstract: ZTX651 ZTX652 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862 Text: FERRANTI ZTX650 ZTX651 ZTX652 ZTX653 $ semiconductors NPN Silicon Planar M e d iu m Power Transistors FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • 2A continuous lc • Excellent gain characteristics to 2A • High V CE0: up to 100 volts • Low saturation voltages	OCR Scan	PDF	ZTX650 ZTX651 ZTX652 ZTX653 100ms 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862
BC337B Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50 Text: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A	OCR Scan	PDF	ZTX653 ZTX453 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 MPSA05 ZTX650 BC337B BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751
Untitled Abstract: No abstract text available Text: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711	OCR Scan	PDF	ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613
ztx653 Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IS S U E 2 - J U L Y 94 FEATURES * 100 V o lt V CE0 * 2 A m p c o n t in u o u s c u r r e n t * L o w s a t u r a t io n v o lt a g e * Ptot=1 W att ABSOLUTE MAXIM UM RATINGS. PARAM ETER SYM BOL ZTX652 ZTX653 U N IT	OCR Scan	PDF	ZTX652 ZTX653 300ns. ZTX653

ZTX751 Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.	OCR Scan	PDF	ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 ZTX652 ZTX552 ZTX452 MPSA56 MPSA06 ZTX751 ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06
BC338C Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military	OCR Scan	PDF	MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BC328A BC328B BC328C BC338C 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
BC337b Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector	OCR Scan	PDF	2N3262 T0-39 T0-18 ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC337b bc327b 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
BCY56 Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51 Text: < Type o< OD NPN LOW LEVEL V ceo M ax c M ax V CE sat\| at V mA V 'c mA Min fT at hFE at Pto, at = 2agC Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple ment	OCR Scan	PDF	2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177
BC338C Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653 Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.	OCR Scan	PDF	ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 MPSA55 ZTX750 ZTX550 BC327A BC327B BC338C ZTX452 MPSA06 MPSA56 ZTX651 ZTX652
bc177 Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 Text: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE	OCR Scan	PDF	ZTX552 ZTX452 MPSA56 MPSA06 BC556P BC546P ZTX551 ZTX451 BFS98 MPSA55 bc177 BFS59 ZTX452 BC546P BFS61 MPSA06 ZTX451
ZTX651 Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860 Text: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.	OCR Scan	PDF	ZTX6535 ZTX753 ZTX652 ZTX752 ZTX651Â ZTX751 ZTX650 ZTX750 ZTX6495 ZTX749 ZTX651 ZTX692B ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
2N1893 Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92 Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	PDF	ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	PDF	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
ZT Ferranti Abstract: BF4935P SE-169 TX-550 X752 X449 Text: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current	OCR Scan	PDF	TQ-92 ZTX752 ZTX751 ZTX749 SO-96 107il/D SE172 ZT Ferranti BF4935P SE-169 TX-550 X752 X449

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ZTX652 Datasheets (19)

ZTX652 Datasheets Context Search

ZTX653

ZTX653

ztx653

Untitled

Philips stepper motor

mn2510

MRF212

ZTX650

BC337B

ztx653

ZTX650

BC337B

Untitled

ztx653

ZTX751

BC338C

BC337b

BCY56

BC338C

bc177

ZTX651

2N1893

aeg diode Si 61 L

ZT Ferranti