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    ZT210 Price and Stock

    Marathon Special Products ZT2101

    Tb, Pwr Distribution, 2Pole, 85A, 600V; Rated Current:85A; Rated Voltage:600V; No. Of Poles:2 Pole; Line Side Connections Per Pole:1; Line Side Connection Method:Screw; Line Side Wire Size Max:4Awg; Load Side Wire Size Max:8Awg |Marathon Special Products ZT2101
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    Newark ZT2101 Bulk 1
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    Master Electronics ZT2101
    • 1 $93.68
    • 10 $84.17
    • 100 $51.63
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    OMRON Electronic Components LLC E3B-ZT210

    Timer For E3E - 10 Seconds - Off Delay.
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    Onlinecomponents.com E3B-ZT210 57
    • 1 $163.64
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    Master Electronics E3B-ZT210 57
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    Carling Technologies L12D1S001-AZZT2-100

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    Master Electronics L12D1S001-AZZT2-100
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    Carling Technologies V2D1S001-1ZZT2-100

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    ZT210 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZT210 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    ZT210 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    ZT210 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZT210 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZT210 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ZT210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ZT210 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ZT210 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZT2102 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    ZT2102 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ZT2102 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ZT2102 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    ZT210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V

    bc140

    Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 bc140 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88

    bc140

    Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BC160 BFY50 2N1613 2N1711 ZT211 BCY65E BCY77 2N2270 ZT210 bc140 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    BC108 transistor

    Abstract: bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP LOW LEVEL TABLE 2 - PN P SILICON PLA N A R LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF ZT211 ZT184 BCY79 BCY59 BCY71 ZT181 ZT182 BC160 BC140 BCY78 BC108 transistor bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189

    BC338C

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BC328A BC328B BC328C BC338C 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    N2907

    Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY70 2N2605 2N2604 ZT181 ZT182 BCY78 BCY58 BCY72 ZT180 ZT187 N2907 ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189

    BSY55

    Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF 2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 BSY51 BSY55 Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    bc140

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF BCY79 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2907A BFY50 bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91

    BSY55

    Abstract: Scans-00107830 2N2222A zetex BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF BSY55 2N2102 2N4036 Scans-00107830 2N2222A zetex BCY56 2N1893 2N2405 2N4036 BFX85 ZT86

    2N2369 SOT-23

    Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
    Text: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast


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    PDF BAW63 BZX88-C10 BZX88-C11 BZX88-C12 BZX88-C13 BZX88-C15 BZX88-C16 BZX88-C18 BZX88-C20 BZX88-C22 2N2369 SOT-23 BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025

    2N4427 equivalent

    Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N4427 equivalent ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEI1IC0ND/DISCRETE | TS DÌf| 752D533 O D D ^ E S 3 95D 04925 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E T? Z D L .J NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS i The transistors shown in this table are characterised for low noise, low level amplification and are particularly


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    PDF 752D533 2N2907A ZT181 BCY58 BC109 BCY78 ZT187 30-15K BC179

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC239C equivalent BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent

    2N4036

    Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
    Text: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details


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    PDF 2N918 2N2708 BUY92 BUY91 BUY90 2N4036 2N4037 TP-39 TRANSISTOR BC140 transistor 2N2219 ZT Ferranti 2N2102 2N2405 2N3866 2N4427

    1K transistor

    Abstract: BCY56 BCY65E BSY55 ZT211 ZT86 ZT88 ZT89 ZT90 ZT91
    Text: NPN LOW NOISE TABLE 5 - NPN SILICO N PLA NA R LOW N O ISE T R A N S IS T O R S The tran sisto rs s h o w n in this table are characterised for lo w noise, low level am plification and are particularly suitable for audio pre-amplifiers a s well a s universal applications.


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    PDF BSY55 2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 1K transistor BCY56 BCY65E ZT211 ZT86 ZT88 ZT89 ZT90 ZT91

    BFS98

    Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
    Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0


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    PDF BFS96 BFS97 BFS98 -150t BFS59-61 ZTX510 BSV33 BFS36 2N930 BFS37 2N2475 2N4127 ZT180 ZT181 ZT182 ZT183

    BCW23

    Abstract: BFS98 ZTX107 2N3866 pin diagram 2N4127 2N3707 2N929 BC107 BC108 BCW20
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


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    PDF ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 BCW23 BFS98 2N3866 pin diagram 2N4127 BC108

    2N2102

    Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 bc107
    Text: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BCY79 BCY59 BCY71 ZT181 BC160 BC140 BCY78 T0-18 BCY58 BCY72 2N2102 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 bc107

    transistor 2n3053

    Abstract: bc140 transistor BC108 ZT152 complement of 2N3053 bc141 2N2102 2N4036 BC161 BCY65E
    Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF ZT184 BCY79 1000t BCY59 BCY71 ZT181 ZT182 bc160 3700t BC140 transistor 2n3053 bc140 transistor BC108 ZT152 complement of 2N3053 bc141 2N2102 2N4036 BC161 BCY65E

    BCY56

    Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 BCY59A 2N1131 2N1132 2N4037 BC177

    Transistor BC177

    Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


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    PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 2N2475 audio BC108 2N1131 2N1132 2N4037 BC177

    BSY52

    Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177