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    ZT187 Search Results

    ZT187 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZT187 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    ZT187 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZT187 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    ZT187 Micro Electronics Semiconductor Device Data Book Scan PDF
    ZT187 Motorola Low Level and General Purpose Amplifiers Scan PDF
    ZT187 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZT187 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZT187 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ZT187 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ZT187 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ZT187 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

    ZT187 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB641

    Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


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    PDF 2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 BC181 3SM diode CS9012 SF158 LOW-POWER SILICON PNP 2N924

    MPS9631

    Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
    Text: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12


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    PDF MPS9600 O-92A MPS9601 MPS9602 MPS9630 MPS9631 T1S91 MPS9632 TIS92 MPS9633 SE4010 TIS61 MPS9634

    Untitled

    Abstract: No abstract text available
    Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4


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    PDF 000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V

    bc140

    Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 bc140 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88

    N706A

    Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


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    PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A N706 BC178 2N1131 2n3053 2N4037

    2N2222 hfe

    Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
    Text: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87


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    PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2906 2N2222 2N2907 ZT180 2N2222 hfe 2N2222 chip ztx313 BCY71 2N2904 2N2906

    BC108 transistor

    Abstract: bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP LOW LEVEL TABLE 2 - PN P SILICON PLA N A R LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF ZT211 ZT184 BCY79 BCY59 BCY71 ZT181 ZT182 BC160 BC140 BCY78 BC108 transistor bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189

    SE4010

    Abstract: 2N3565 TIS92 2N3692 TIS90 2N2924 PN3565 PN3566 PN3694 PN4249
    Text: TYPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers CASE M A X IM U M R A T IN G S Pd mW 'c (m A | V CE(SAT) h fe V CEO (V) min max 'c (m A) V CE (V) max (V) 'c (m A ) fT m in (MHz) Cob N.F. max max (pF) (dB) PN3565 PN3566 PN3694 PN4249 PN4250


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    PDF PN3565 O-92A PN3566 PN3694 PN4249 PN4250 SE4010 2N3565 TIS92 2N3692 TIS90 2N2924

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    typical 2n2222 npn transistors

    Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


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    PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J MoulTO-18 typical 2n2222 npn transistors 2N2475 2N2222 2N2483

    N2907

    Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY70 2N2605 2N2604 ZT181 ZT182 BCY78 BCY58 BCY72 ZT180 ZT187 N2907 ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189

    BSY55

    Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF 2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 BSY51 BSY55 Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    2N2220

    Abstract: 2N2219 transistor 2N2475 2N2218 2N2219 2N2221 2N2222 2N2904 2N2905 2N2906
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at V hFE at Switching Times (Max) at fjM in at Package lc Ib Min. Max. !c !c mA MHz mA mA mA 25* 175* 150 TO-39 2N2904 25* 200* 150 TO-39 2N2905 20 20* 213* 150 TO-18 150 250 20 25* 175* 150 TO-18


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    PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2219 transistor 2N2475 2N2904 2N2905 2N2906

    2N2222

    Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*


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    PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2904 2N2219 transistor 2N2475 2N2905 2N2906

    2N2477

    Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


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    PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J 2N2907A 2N2477 2N2222 2N2219 transistor 2N2938 2N2483

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025

    CV7753

    Abstract: ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84
    Text: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3


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    PDF ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 CV7753 ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEI1IC0ND/DISCRETE | TS DÌf| 752D533 O D D ^ E S 3 95D 04925 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E T? Z D L .J NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS i The transistors shown in this table are characterised for low noise, low level amplification and are particularly


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    PDF 752D533 2N2907A ZT181 BCY58 BC109 BCY78 ZT187 30-15K BC179

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC239C equivalent BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent

    2N4036

    Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
    Text: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details


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    PDF 2N918 2N2708 BUY92 BUY91 BUY90 2N4036 2N4037 TP-39 TRANSISTOR BC140 transistor 2N2219 ZT Ferranti 2N2102 2N2405 2N3866 2N4427

    1K transistor

    Abstract: BCY56 BCY65E BSY55 ZT211 ZT86 ZT88 ZT89 ZT90 ZT91
    Text: NPN LOW NOISE TABLE 5 - NPN SILICO N PLA NA R LOW N O ISE T R A N S IS T O R S The tran sisto rs s h o w n in this table are characterised for lo w noise, low level am plification and are particularly suitable for audio pre-amplifiers a s well a s universal applications.


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    PDF BSY55 2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 1K transistor BCY56 BCY65E ZT211 ZT86 ZT88 ZT89 ZT90 ZT91