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    Z10A Search Results

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    Z10A Price and Stock

    Vishay Semiconductors PLZ10A-HG3_A-H

    DIODE ZENER 10V 500MW DO219AC
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    DigiKey PLZ10A-HG3_A-H Digi-Reel 11,938 1
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    PLZ10A-HG3_A-H Cut Tape 11,938 1
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    PLZ10A-HG3_A-H Reel 4,500 4,500
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    Vishay Semiconductors TLZ10A-GS18

    DIODE ZENER 10V 500MW SOD80
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    DigiKey TLZ10A-GS18 Cut Tape 7,478 1
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    TLZ10A-GS18 Digi-Reel 7,478 1
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    Diodes Incorporated DDZ10ASF-7

    DIODE ZENER 9.36V 500MW SOD323F
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    DigiKey DDZ10ASF-7 Cut Tape 2,995 1
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    DDZ10ASF-7 Digi-Reel 2,995 1
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    Avnet Silica DDZ10ASF-7 18 Weeks 3,000
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    Mouser Electronics DDZ10ASF-7
    • 1 $0.1
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    • 100 $0.032
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    • 10000 $0.016
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    YAGEO Corporation SQZ10AJB-9K1

    RES 9.1K OHM 5% 10W RADIAL
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    DigiKey SQZ10AJB-9K1 Bulk 600 1
    • 1 $1.48
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    • 1000 $0.37
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    YAGEO Corporation SQZ10AJB-15R

    RES 15 OHM 5% 10W RADIAL
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    DigiKey SQZ10AJB-15R Bulk 498 1
    • 1 $0.95
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    • 100 $0.6554
    • 1000 $0.37
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    TTI Europe SQZ10AJB-15R
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    Avnet Americas SQZ10AJB-15R Bulk 24 Weeks 600
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    New Advantage Corporation SQZ10AJB-15R 900 1
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    Find more Z10A price and stock on Findchips.com

    Z10A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Z10A Shenzhen Yongerjia Electronic Zener Diode Original PDF

    Z10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Z14b

    Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		PDF MRF374/D MRF374 Z14b Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B

    z18a

    Abstract: Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A
    Text: WILLAS DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6)


    Original     		PDF GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 300K/W z18a Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A

    Z18B

    Abstract: z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B
    Text: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.


    Original     		PDF GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 500mW 300K/W Z18B z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 28rola,

    z14b

    Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A

    z18a

    Abstract: No abstract text available
    Text: SZA*A Series GLASS PASSIVATED JUNCTION Zener voltage regulator diodes 1.0 Watt Steady State Feature * 1W SMA * Zener voltage regulator diodes * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * We declare that the material of product


    Original     		PDF DO-214AC MIL-STD-202, z18a

    RO3010

    Abstract: C14A z14b
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374/D MRF374 MRF374/D RO3010 C14A z14b

    zener gdzj marking

    Abstract: zener gdzj
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives


    Original     		PDF GDZJ56 500mW 2011/65/EU DO-34 MIL-STD-750, DO-34 2014-REV zener gdzj marking zener gdzj

    IR TK 2836

    Abstract: zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER DO-35 Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		PDF GDZJ56 DO-35 500mW MIL-STD-202G, DO-35 500mW 300K/W IR TK 2836 zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2

    z6c8

    Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)


    Original     		PDF GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 2012-REV RB500V-40 z6c8 Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b

    marking 6a2 smd

    Abstract: zener Z11B
    Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C


    Original     		PDF 500mW 94Leakage marking 6a2 smd zener Z11B

    RO3010

    Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		PDF DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901

    z9b1

    Abstract: Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		PDF GDZJ56 DO-35 500mW MIL-STD-202, DO-35 z9b1 Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D

    Untitled

    Abstract: No abstract text available
    Text: • Z10A bbSBTBl D032b2B 17T * A P X N AflER PH ILIP S/ D IS C R ET E b^E D y v MAGNETIC FIELD SENSOR The KM Z10A is an extremely sensitive magnetic field sensor employing the magneto-resistive effect o f th in film permalloy. Its properties enable this sensor to be used in a wide range of applications fo r navigation, current and


    OCR Scan     		PDF KMZ10A D032b2B

    KMZ10A application note

    Abstract: DG32B hx 002 KMZ10A hx 36 SOT195
    Text: • Z10A bbSBTBl GOaabEB 17T * A P X N AMER PHILIPS/DISCRETE blE D MAGNETIC FIELD SENSOR The KM Z10A is an extremely sensitive magnetic field sensor employing the magneto-resistive effect o f th in film permalloy. Its properties enable this sensor to be used in a wide range of applications fo r navigation, current and


    OCR Scan     		PDF KMZ10A KMZ10A KMZ10A application note DG32B hx 002 hx 36 SOT195

    LC324256-10

    Abstract: lh64256 HY534256-60 LC324256-12 514258 HY534256-10 km44c256c Z80A HY51C4258L-12 HY51C4258L-85
    Text: - 2121M CMOS 7s m & î± CO A Dynamic -f* y / RAM 2 6 2 1 4 4 x 4 n ft TRAC isax (ns) TRCY min (ns) TCAll min (ns) TAH min (ns) TP min (ns) T#CY (ns) T M min (ns) TRWC min (ns) V D D or V C C (V) 2 IDD max (mA) 0 PIN K f) m I DD STANDBY ( I SB/ I SB2) (mA)


    OCR Scan     		PDF HY51C4258L-12 HY51C4258L-85 HY534256-10 LC324256PL/JL/ZL-T0 LC324256PL/JL/ZI-80 LH604256D/K/Z- LH604256D/K/Z-80A LH64256/Z/K-10 LH64256/Z/K-12 LC324256-10 lh64256 HY534256-60 LC324256-12 514258 km44c256c Z80A

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    2SA940

    Abstract: Z10A1 2sc2073
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA940 Unit in nan POWER A M P L I F I E R 10.31ÍAX. 0:s.6±az AP P LIC A TIO N S . V E R T IC A L OUTPUT A P P L IC A T IO N S - FEATURES: . Complementary to 2SC2073 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2SA940 2SC2073 Z-10A1A -120V, -500mA -500mA, -50mA 2SA940 Z10A1 2sc2073

    KMZ10A application note

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Magnetic field sensor Z10A DESCRIPTION The KMZ1OA is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a


    OCR Scan     		PDF KMZ10A BA737 KMZ10A application note

    M4301

    Abstract: SI6-S23 00MQW chmc 6232 RAM flower in the rain LC86E6232 tht 4301 p 456j 3M 456J
    Text: Ordering number; ENK4301 // _ L C 8 6 E 6 2 3 2 S A \ YOi I CMOS LSI 8-Bit Single Chip Microcomputer Preliminary Overview The LCS6E6232 microcomputer is CMOS ft-bil single chip microcomputer withUVEPROM foe LC866200A sene». Tbit microcomputer Hu the function and the pin description of LC866200A iciiel mask ROM vertJon,


    OCR Scan     		PDF M4301 LC86E6232 LC86E6232 LC86620QA UT866200A 32K-byte LC866200A LCE6E6232 M4301 SI6-S23 00MQW chmc 6232 RAM flower in the rain tht 4301 p 456j 3M 456J

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    KMZ10A

    Abstract: SOT195 41e magnetic sensor Magnetic Field Sensor magnetic sensor circuit diagram KMZ10A application note
    Text: Philips Semiconductors Preliminary specification Magnetic field sensor Z10A DESCRIPTION The Z10A is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a


    OCR Scan     		PDF KMZ10A KMZ10A MBA737 MLC121 OT195) SOT195 41e magnetic sensor Magnetic Field Sensor magnetic sensor circuit diagram KMZ10A application note

    KMZ10A

    Abstract: hx 002 magnetic sensor circuit diagram SOT195 MLC716 LC121 KMZ10A application note
    Text: Philips Semiconductors Preliminary specification Magnetic field sensor Z10A DESCRIPTION The K M Z 10A is an extrem ely sensitive m agnetic field sensor, em ploying the m agnetoresistive effect of thin-film perm alloy. Its properties enable this sensor to be used in a


    OCR Scan     		PDF KMZ10A KMZ10A peratuC121 hx 002 magnetic sensor circuit diagram SOT195 MLC716 LC121 KMZ10A application note