Untitled
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 August 2005 - Rev 03-Aug-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency
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Original
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PDF
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03-Aug-05
APH478
P1014
XP1014
I0005129
XP1006/7
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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Original
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PDF
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APH478
P1014
01-Nov-06
XP1006
MIL-STD-883
XP1014
I0005129
XP1014-BD-000W
XP1014-BD-000V
XP1014-BD-EV1
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Chip Advanced Tech
Abstract: XP1006 XP1006 bonding
Text: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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XP1014-BD
XP1006
MIL-STD-883
01-Sep-10
XP1014
I0005129
Chip Advanced Tech
XP1006 bonding
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P1014
Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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Original
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PDF
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APH478
P1014
14-Apr-06
XP1006/7
MIL-STD-883
XP1014
I0005129
P1014
xp1014
84-1LMI
XP1006 bonding
GHz HPA
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p1014
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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Original
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PDF
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01-Nov-06
APH478
P1014
XP1014
I0005129
XP1006
MIL-STD-883
XP1014-BD-000W
XP1014-BD-000V
XP1014-BD-EV1
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P1014
Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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P1014-BD
03-Aug-07
XP1006
MIL-STD-883
XP1014
I0005129
XP1014-BD-000V
XP1014-BD-EV1
XP1014
P1014
DM6030HK
TS3332LD
XP1014-BD-000V
XP1006 bonding
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xp1014
Abstract: P1014-BD
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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14-Nov-08
P1014-BD
XP1014
I0005129
XP1006
MIL-STD-883
XP1014-BD-000V
XP1014-BD-EV1
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Untitled
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 May 2005 - Rev 05-May-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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Original
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PDF
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APH478
P1014
05-May-05
XP1006/7
MIL-STD-883
XP1014
I0004966
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XP1006-BD
Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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XP1006-BD
MIL-STD-883
01-Sep-10
XP1006
XP1006-BD
X-band GaAs pHEMT MMIC Chip
GAAS FET AMPLIFIER x-band 10w
Chip Advanced Tech
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GAAS FET AMPLIFIER x-band 10w
Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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03-Aug-07
P1006-BD
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-EV1
XP1006
GAAS FET AMPLIFIER x-band 10w
XP1006-BD
XP1006-BD-EV1
P1006BD
MMIC X-band amplifier
P1006
DM6030HK
TS3332LD
XP1006-BD-000V
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power transistor gaas x-band
Abstract: x-band transistor
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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30-Sep-05
P1006
MIL-STD-883
XP1006
power transistor gaas x-band
x-band transistor
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P1006
Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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01-Nov-06
P1006
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-000W
XP1006-BD-EV1
GAAS FET AMPLIFIER x-band 10w
XP1006 bonding
XP1006-BD
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Untitled
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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01-Nov-06
P1006
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-000W
XP1006-BD-EV1
XP1006
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P1006BD
Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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11-Nov-08
P1006-BD
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-EV1
P1006BD
XP1006-BD
GAAS FET AMPLIFIER x-band 10w
Mimix Asia
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tanaka gold wire
Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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13-Mar-06
P1006
MIL-STD-883
XP1006
tanaka gold wire
MMIC X-band amplifier
P1006
DM6030HK
TS3332LD
XP1006
XP1006 bonding
X-band GaAs pHEMT MMIC Chip
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