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    Edgecore Networks Corporation WEDGE100-65X-O-AC-F-US

    WEDGE 100-65X SWITCH PROVIDES 65 QSFP28 PORTS THAT CAN EACH RUN AT 100GBE/40GBE, OR AS 4 X 25 GBE/4 X 10 GBE/2 X 50 GBE THROUGH BREAKOUT CABLES. - Bulk (Alt: WEDGE100-65X-O-AC-F-US)
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    Edgecore Networks Corporation 7816-64X-O-AC-F-R-US REV2

    R18 R04A - Bulk (Alt: 7816-64X-O-AC-F-R-)
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    Avnet Americas 7816-64X-O-AC-F-R-US REV2 Bulk 30 Weeks 1
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    Edgecore Networks Corporation 7816-64X-O-AC-F-R-US

    - Bulk (Alt: 7816-64X-O-AC-F-R-)
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    Edgecore Networks Corporation WEDGE100S-32X-O-AC-F

    - Bulk (Alt: WEDGE100S-32X-O-AC-F)
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    Accortec Inc 400-AEXO-ACC

    DELL compatible 400GB Solid State Drive SAS Mix Use MLC 12Gbps 2.5in Hot-plug Drive,3.5in HYB CARR,CusKit (400-AEXO)
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    NAC 400-AEXO-ACC 1
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    XOAC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XE1209C012TRLF

    Abstract: CPFSK receiver DS26 XE1209
    Text: XE1209 Ultra Low Power CMOS Transceiver XE1209 30 – 70 kH Ultra Low Power CMOS Transceiver GENERAL DESCRIPTION The XE1209 is a CMOS Ultra Low-Power transceiver for short-range low frequency RF data communications system. It uses 2-level Continuous Phase FSK modulation. The receiver section


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    PDF XE1209 XE1209 32kHz XE1209C012TRLF CPFSK receiver DS26

    CPFSK receiver

    Abstract: No abstract text available
    Text: XE1209 Ultra Low Power CMOS Transceiver XE1209 30 – 70 kHz Ultra Low Power CMOS Transceiver KEY FEATURES GENERAL DESCRIPTION • • • • • • The XE1209 is a CMOS Ultra Low-Power transceiver for short-range low frequency RF data communications system. It uses 2-level Continuous


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    PDF XE1209 XE1209 CPFSK receiver

    XOAC

    Abstract: Capacitate CMOS/Transceiver xtal 32.768 DS26 SO20 XE1209 FC D0205 F1872
    Text: Datasheet XE1209 Ultra Low Power CMOS Transceiver XE1209 30 – 70 kHz Ultra Low Power CMOS Transceiver GENERAL DESCRIPTION KEY FEATURES The XE1209 is a CMOS Ultra Low-Power transceiver for short-range low frequency RF data communications system. It uses 2-level


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    PDF XE1209 XE1209 D0205-51 XOAC Capacitate CMOS/Transceiver xtal 32.768 DS26 SO20 FC D0205 F1872

    Capacitate

    Abstract: DS26 XE1209 CPFSK receiver XOAC
    Text: XE1209 Datasheet Cvdd 100nF Vdd wupen Level Peak Detector 270pF Sine Filter @2 fc LowPass Filter @ fc SUPTEST VDDA I 150k 68mH INB 47nF Vdd Limiter Demodulator VREF clk Anti-Alias Filter Sine Filter @2 fc Current Ref. LowPass Filter @ fc Q VSSA I Preampl +i


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    PDF XE1209 100nF 270pF en32Kout b00000000 D0010-51 Capacitate DS26 XE1209 CPFSK receiver XOAC

    KL SN 102 94v

    Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
    Text: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a


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    PDF SCV64 024fl0 SCV64 288-pin CA91C078-X CA91C078 b5flfll01 KL SN 102 94v wire T568 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535

    AB28F200B5B80

    Abstract: AB28F400B5B80 E28F800B5T90 AB28F400B5 AB28F400B5B80 FLASH tb28f200b5 AB28F
    Text: 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 • SmartVoltage Technology — 5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes — Increased Programming Throughput at 12 V Vpp ■ Very High-Performance Read — 2-, 4-Mbit: 55 ns Access Time


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    PDF 28F200B5, 28F004/400B5, 28F800B5 x8/x16) x8/x16-Configurable 16-KB 96-KB 128-KB 48-Lead 44-Lead AB28F200B5B80 AB28F400B5B80 E28F800B5T90 AB28F400B5 AB28F400B5B80 FLASH tb28f200b5 AB28F

    Princ

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION 5 VOLT AUTOMOTIVE BOOT BLOCK FLASH MEMORY AB28F200BR, AB28F400BR x8/x16 • Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 5 V Read Operation ■ Very High Performance Read — 80 ns Max. Access Time, — 40 ns Max. Output Enable Time


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    PDF AB28F200BR, AB28F400BR x8/x16) x8/x16-Selectable 32-bit 16-KB 96-KB 128-KB Princ

    tundra scv64

    Abstract: No abstract text available
    Text: Table of Contents 1 General Information. 1-1 1.1 Introduction. 1-1 1.2


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    PDF SCV64 tundra scv64

    28F800

    Abstract: TE28F800CVB90 intel pa28f800
    Text: SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 2 8 F 8 0 0 B V -T /B , 2 8 F 8 0 0 C V -T /B , 2 8 F 0 0 8 B V -T /B 2 8 F 8 0 0 C E -T /B , 2 8 F 0 0 8 B E -T /B • Intel Sm artVoltage Technology — 5 V or 12 V Program/Erase


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    PDF 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B x8/x16-Selectable 28F800 32-bit 28F008B 16-KB TE28F800CVB90 intel pa28f800

    d4516161

    Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.


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    PDF uPD4516421 uPD4516821 uPD4516161 16M-bit PD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin d4516161 NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516

    Untitled

    Abstract: No abstract text available
    Text: • DESCRIPTION The MB89640 series has been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers. In addition to a compact instruction set, the microcontrollers contain a variety of peripheral functions such as


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    PDF MB89640 16-bit F9703

    CA91C078

    Abstract: xod8 Q00h SCV-64
    Text: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / bSflfllDl 0 0 0 2 4 0 0 134 T he inform ation in this docum ent is subject to change w ithout notice and should not be construed as a com m itm ent by N ew bridge M icrosystem s. W hile reasonable precautions have been taken, Newbridge


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    PDF SCV64 288-pin fll01 CA91C078-X CA91C078 CA91C078 xod8 Q00h SCV-64

    la3246

    Abstract: DIP24S LA3242 D1P24
    Text: Ordering number: EN 2620C Monolithic Linear 1C LA3242 Is a H yoi Preamplifier for Compact Cassette Recorder Recording-only Use ,0i'' " X . X. Overview Package Dimensions % The LA3242 is a preamp 1C for compact cassette rccordcr rccording-only usc. The distinctive feature of the LA3242 is


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    PDF 2620C LA3242 LA3242 3067-D1P24S M2/12 la3246 DIP24S D1P24

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12505-3E 8-bit Proprietary Microcontroller lIM F2MC-8L MB89640 Series DESCRIPTION The MB89640 series has been developed as a general-purpose version of the F2MC*-8L family consisting of


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    PDF DS07-12505-3E MB89640 F9703

    A/M29F010B(45/70/90/MT352/CG/sigma asc 333

    Abstract: No abstract text available
    Text: L IÆ j W NEC Electronics Inc. HIPD424100, 4241OOA/L, 42S41OOA/L 4,194,304 x 1-Bit Dynamic CMOS RAM October 1992 Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.


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    PDF HIPD424100, 4241OOA/L, 42S41OOA/L 424100-xx 424100-xxL 24100A-XX 42S4100A-xx 424100L-Axx 42S4100L-Axx A/M29F010B(45/70/90/MT352/CG/sigma asc 333

    MA 7815 tesla

    Abstract: MAA501 MAA 436 TESLA MCA660 MAS560A MCA640 MA3005 MAA725 tesla maa 436 MA 7805 tesla
    Text: l i 8 S W C L j D I W L M E L E K T R O N IC K É M K O N C E R N Ä H a n o r o B b i e S O U C Ä S T K Y R O Z N O V i/iHTerpa/ibHbie M M K pO C X eM bl A H a n o r o B b ie M H T e r p a n b H b ie M M KpO C XeM bl 1 L jM c fc p o B b ie M H T e r p a n b H b ie


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION 5 VOLT AUTOMOTIVE BOOT BLOCK FLASH MEMORY AB28F200BR, AB28F400BR, AB28F800BR x8/x16 • Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 5 V Read Operation ■ Very High Performance Read — 80 ns Max. Access Time, — 40 ns Max. Output Enable Time


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    PDF AB28F200BR, AB28F400BR, AB28F800BR x8/x16) x8/x16-Selectable 32-bit 16-KB 96-KB 128-KB

    2T908A

    Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
    Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,


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    PDF T-0574D. 30Eiaa Coi03nojiH 2T908A 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12505-3E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89640 Series MB89643/645/646/647/P647/PV640 • DESCRIPTION The MB89640 series has been developed as a general-purpose version of the F2MC*-8L family consisting of


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    PDF DS07-12505-3E MB89640 MB89643/645/646/647/P647/PV640 MQP-80C-P01 80-pin FPT-80P-M06)

    tb28f200b5

    Abstract: 28F400B5
    Text: PRELIMINARY 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 • SmartVoltage Technology — 5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes — Increased Programming Throughput at 12 V V p p ■ Extended Block Erase Cycling


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    PDF 28F200B5, 28F004/400B5, 28F800B5 x8/x16) x8/x16-Configurable 16-KB 96-KB 128-KB 48-Lead 44-Lead tb28f200b5 28F400B5

    xoac

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION All inform ation in this data sheet is prelim inary and su b je c t to change. jê jê j v i j ê j êI _ M obile-Radio A nalog C o n tro ller _ General Description _ Features T he M AX 1007 is a m u ltifu n c tio n a l in te g ra te d c irc u it


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    PDF MAX1007 xoac

    SM56V16800

    Abstract: transistor 305 56V16800 active suspension BA RV 2H24D d0117
    Text: OKI Semiconductor MSM56V16800 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M SM 56V16800 is a 2-b an k x 1,048,576-w ord x 8-bit synchronous D ynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.


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    PDF MSM56V16800 576-Word MSM56V16800 cycles/64 b724240 SM56V16800 transistor 305 56V16800 active suspension BA RV 2H24D d0117