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Panasonic Electronic Components XN0187200L MOSFET 2N-CH 50V 0.1A MINI5-G1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XN0187200L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Component Electronics, Inc	XN0187200L		229			1 - 10 - 100 - 1000 - 10000 -	Buy Now

XN01872 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
XN01872		Panasonic	Silicon n-channel enhancement MOSFET		Original	PDF
XN01872		Panasonic	Silicon N-channel · Enhancement MOS FET		Original	PDF
XN01872		Panasonic	N-Channel Enhancement MOS FET Composite Transistors		Original	PDF
XN0187200L		Panasonic	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 50V 100MA MINI-5		Original	PDF

XN01872 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK621 Abstract: XN01872 XN1872 FET23 Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10	Original	PDF	2002/95/EC) XN01872 XN1872) 2SK621 XN01872 XN1872 FET23
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)	Original	PDF	2002/95/EC) XN01872 XN1872) 2SK0621 2SK621)
2SK0665 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872G Silicon n-channel enhancement MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package ■ Features ■ Basic Part Number • 2SK0665 x 2 Parameter Gate-source voltage (Drain open)	Original	PDF	2002/95/EC) XN01872G 2SK0665 2SK0665
2SK621 Abstract: XN01872 XN1872 FET MARKING Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK0621(2SK621) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element	Original	PDF	XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872 FET MARKING
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)	Original	PDF	2002/95/EC) XN01872 XN1872) 2SK0621 2SK621)
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package (Source-coupled FETs)	Original	PDF	2002/95/EC) XN01872 XN1872)
2SK0665 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872G Silicon n-channel enhancement MOSFET For switching • Package ■ Features • 2SK0665 x 2 • Code Mini5-G2 • Pin Name 1: Drain (FET1) 2: Drain (FET2) 3: Gate (FET2)	Original	PDF	2002/95/EC) XN01872G 2SK0665 2SK0665
2SK621 Abstract: XN01872 XN1872 JIS C 1102 Text: Composite Transistors XN01872 XN1872 Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half	Original	PDF	XN01872 XN1872) 2SK621 XN01872 XN1872 JIS C 1102
2SK621 Abstract: XN01872 XN1872 Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.	Original	PDF	XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872
2SK621 Abstract: XN1872 XN01872 Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10	Original	PDF	2002/95/EC) XN01872 XN1872) 2SK621 XN1872 XN01872
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PDF	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
ma3df25 Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

220v AC voltage stabilizer schematic diagram Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585	Original	PDF	AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
mip411 Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PDF	PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291