TMS27256
Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Text: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64
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2716BDC
Am27C64
Am2864AE
Am2864BE
Am27C128
Am27C256
Am27H256
Am27C512
Am27C512L
Am27C010
TMS27256
M27512FI
TC571000D-15
et2732
TC571001D-15
4827128
27c1001a
Toshiba TC571000D-20
28C256
27c32
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x2816
Abstract: X2816B
Text: XICOR 9941743 X IC O R INCT5 De I ^ 4 1 7 4 3 DGD14TD 95D 014 90 IN C G |~ D T-M-/3-27 PRELIMINARY INFORMATION 16K Military 2048 x 8 Bit X2816BM Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times
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DGD14TD
T-M-/3-27
X2816BM
16-Byte
X2816BM
x2816
X2816B
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X2816B
Abstract: No abstract text available
Text: X ra PRELIMINARY in f o r m a t io n 16K Military X2816BM 2048 x 8B Electrically Erasable PROM features DESCRIPTION • 250 ns Access Tim« • High Performance Advanced NMOS Technology « Fast Write Cycle Times - 16-Byte Page Write Operation —Byte or Page Write Cycle: 5 ma Typical
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X2816BM
X2616
X2816B
X2616B
16-byte
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X2816BMB
Abstract: X2816BM X2816B
Text: Xiar. D ATA S H EET S U P PLEM EN T 16K Mil-Std-883C X2816BMB 2 04 8 x8 Bit Electrically Erasable PROM With the exception of V q e . all device A.C. and D.C. pa rameters are the same as those for normal operation. A.C. AND D.C. REQUIREMENTS FOR CHIP ERASE
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X2816BMB
MilStd-883C
Mil-Std-883C
X2816BM
X2816B
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X2816B
Abstract: X2816BM X2816BMB WE VQE 11 E X2816BM-25
Text: JÜHK PR ELIM IN A R Y IN FO R M A TIO N 16K Military X2816BM 2 0 4 8 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical
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X2816BM
16-Byte
X2816B
Mil-Std-883C
X2816BMB
WE VQE 11 E
X2816BM-25
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Untitled
Abstract: No abstract text available
Text: Usar PRELIMINARY INFORMATION 16K Military X2816BM 2048 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical
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X2816BM
16-Byte
X2816B
ilStd-883C
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0G015
Abstract: X2816BMB
Text: XICOR INC TS 99 41 74 3 X I C O R 1^1^41743 0G015D0 □ 95D INC T - ¥4 -/3 -27 DATA SHEET SUPPLEMENT Mil-Std-883C 16K 01500 D W i 2048 x 8 Bit X2816BMB Electrically Erasable PROM With the exception of Voe . a11device A.C. and D.C. pa rameters are the same as those for normal operation.
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0G015D0
Mil-Std-883C
X2816BMB
X2816BMB
MilStd-883C
0G015
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