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    X1004 Price and Stock

    Bourns Inc CR0805-FX-1004ELF

    RES SMD 1M OHM 1% 1/8W 0805
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    DigiKey CR0805-FX-1004ELF Reel 60,000 5,000
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    Avnet Americas CR0805-FX-1004ELF Reel 35,000 12 Weeks 5,000
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    CR0805-FX-1004ELF Reel 12 Weeks, 3 Days 5,000
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    CR0805-FX-1004ELF Ammo Pack 1
    • 1 $0.104
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    Newark CR0805-FX-1004ELF Reel 25,000 25,000
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    RS CR0805-FX-1004ELF Bulk 13 Weeks 25,000
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    Avnet Abacus CR0805-FX-1004ELF Reel 15 Weeks 25,000
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    Chip-Germany GmbH CR0805-FX-1004ELF 4,310
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    Bourns Inc CRM1206-FX-1004ELF

    RES SMD 1M OHM 1% 1/2W 1206
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    DigiKey CRM1206-FX-1004ELF Cut Tape 18,359 1
    • 1 $0.13
    • 10 $0.066
    • 100 $0.0376
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    CRM1206-FX-1004ELF Digi-Reel 18,359 1
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    • 1000 $0.02372
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    CRM1206-FX-1004ELF Reel 10,000 5,000
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    Avnet Americas CRM1206-FX-1004ELF Reel 14 Weeks 10,000
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    Avnet Abacus CRM1206-FX-1004ELF Reel 17 Weeks 10,000
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    Master Electronics CRM1206-FX-1004ELF
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    Vishay Beyschlag CMB02070X1004FB200

    CMB 0207 1% B2 1M0
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    DigiKey CMB02070X1004FB200 Digi-Reel 5,090 1
    • 1 $1.11
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    • 100 $0.3892
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    CMB02070X1004FB200 Cut Tape 5,090 1
    • 1 $1.11
    • 10 $0.641
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    • 1000 $0.25105
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    CMB02070X1004FB200 Reel 4,000 2,000
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    Walsin Technology Corporation WR08X1004FTL

    RES 1M OHM 1% 1/8W 0805
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    DigiKey WR08X1004FTL Cut Tape 4,964 1
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    WR08X1004FTL Digi-Reel 4,964 1
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    Newark WR08X1004FTL Cut Tape 133 10
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    TME WR08X1004FTL 63,100 1
    • 1 $0.08989
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    • 100 $0.00687
    • 1000 $0.00364
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    Chip-Germany GmbH WR08X1004FTL 26,449
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    Diodes Incorporated PI3EQX1004ZHEX

    USB3 EQX V-QFN3590-42
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    DigiKey PI3EQX1004ZHEX Digi-Reel 3,465 1
    • 1 $6.05
    • 10 $4.079
    • 100 $2.9973
    • 1000 $2.41007
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    PI3EQX1004ZHEX Cut Tape 3,465 1
    • 1 $6.05
    • 10 $4.079
    • 100 $2.9973
    • 1000 $2.41007
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    Bristol Electronics PI3EQX1004ZHEX 3,454
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    Avnet Silica PI3EQX1004ZHEX 42 Weeks 3,500
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    Find more X1004 price and stock on Findchips.com

    X1004 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    X1004 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    X1004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		PDF 17-Jan-07 X1004-BD XR1002 MIL-STD-883 XX1004-BD XX1004-BD-000V XX1004-BD-000W XX1004-BD-EV1 XX1004-BD

    Untitled

    Abstract: No abstract text available
    Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD February 2007 - Rev 16-Feb-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		PDF X1004-BD 16-Feb-07 XR1002 MIL-STD-883 XX1004-BD XX1004-BD-000V XX1004-BD-EV1 XX1004-BD

    12DBL0409

    Abstract: DM6030HK TS3332LD XR1002 XX1004-BD XX1004-BD-000V X1004-BD 3 pin ir receiver module 0038 ultrasonic amplifier circuit diagram
    Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD February 2007 - Rev 16-Feb-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		PDF X1004-BD 16-Feb-07 XR1002 MIL-STD-883 XX1004-BD XX1004-BD-000V XX1004-BD-EV1 XX1004-BD 12DBL0409 DM6030HK TS3332LD XX1004-BD-000V X1004-BD 3 pin ir receiver module 0038 ultrasonic amplifier circuit diagram

    SUP90P06-09L

    Abstract: No abstract text available
    Text: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS


    Original     		PDF SUP90P06-09L 2002/95/EC O-220AB SUP90P06-09L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP90P06-09L

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30

    MH 1004 SMPS

    Abstract: No abstract text available
    Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRF830A, SiHF830A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MH 1004 SMPS

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Available Ultra Low On-Resistance RoHS* Dynamic dV/dt Rating COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated


    Original     		PDF IRFZ48R, SiHFZ48R SiHFZ48 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SUP75P03-07-E3

    Abstract: No abstract text available
    Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available


    Original     		PDF SUB75P03-07, SUP75P03-07 2002/95/EC O-220AB O-263 SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 SUP75P03-07-E3

    D 92 M - 02 DIODE

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		PDF IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D 92 M - 02 DIODE

    IRFB9N65

    Abstract: No abstract text available
    Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFB9N65

    74281

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		PDF SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74281

    any circuit using irf830

    Abstract: No abstract text available
    Text: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF830, SiHF830 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 any circuit using irf830

    irf740lc

    Abstract: No abstract text available
    Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF740LC, SiHF740LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf740lc

    Untitled

    Abstract: No abstract text available
    Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRF740A, SiHF740A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    power MOSFET IRF610

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 power MOSFET IRF610

    MAR 740 MOSFET TRANSISTOR

    Abstract: D 1402
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR D 1402

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh

    Untitled

    Abstract: No abstract text available
    Text: METRIC Dimensions are millimeters over inches Ribbon Cable Interconnect Solutions Micro-MaTch Miniature Connector System — Crimp On Snap In COSI Connector C 2.54 [.100] 1.27 [.050] 2.65 [.104] Basic Part Number 338095 and Contacts Part Numbers 338096 and 338097


    Original     		PDF are15

    SUP53P06-20

    Abstract: SUP53
    Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT


    Original     		PDF SUP53P06-20 O-220AB SUP53P06-20-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP53P06-20 SUP53

    awm 2896 flat RIBBON CABLE

    Abstract: Flat Ribbon Connector - 636 60 IDC 768340-1 20 pin Polarized IDC Male Headers with Latch 5499910-1 1-111626-7 5104338-2 609-1030lf 5103309-3 1761686-3
    Text: Catalog 82012 Revised 10-09 TE logo and Tyco Electronics are trademarks of the Tyco Electronics group of companies and its licensors. tycoelectronics.com 82012–2.5M–CIS–FP–10-09 Ribbon Cable Interconnect Solutions Tyco Electronics Corporation Harrisburg, PA


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 11-Mar-11

    CX10047

    Abstract: sony CX10047 CX10045 CX10046 VOH14 sony camera WF01
    Text: SONY C O R P / C O M P O N E N T P R O D S 77 D e J a3fl53fl3~llQ003l]fl b | % 'xi T" 77^/7 X10046 S O N Y AGC and AUTO IRIS for B/W CAMERA Description: C X10046 is a bipolar 1C designed for B/W Package outline Unit: mm camera signal processing. It consists of an AGC


    OCR Scan     		PDF CX10046 CX10046 CX10045 16-pin 15max CX10045and CX10047. VIN11 ol09vF2-vF1" CX10047 sony CX10047 VOH14 sony camera WF01

    CX10047

    Abstract: sony CX10047 CX10045 CX10046 ccd sony sony CX10045 SONY CAMERA BW82 cx10047 sony
    Text: mutœutam* h M .jft»-. •. ri—" ■ lliiTMt SONY CORP/COMPONENT PRODS 7? D e | 0302303 DDDQ30M T I D T - 7 7-/7 X10045 CCD CAMERA SIGNAL PROCESSING WITH SAMPLE-HOLD CIRCUIT Description: C X 10045 is a bipolar 1C designed for CCD camera signal processing. It samples the CCD image


    OCR Scan     		PDF CX10045 CX10045 CX10046 CX10047. 16-pin 15MAX 05MIN fiBfl53fi3 CX10047 sony CX10047 ccd sony sony CX10045 SONY CAMERA BW82 cx10047 sony