A113
Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030MBR1 RK73H2ATD
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station
|
Original
|
PDF
|
MW5IC2030M/D
MW5IC2030
MW5IC2030MBR1
MW5IC2030GMBR1
A113
AN1955
AN1987
MW5IC2030GMBR1
RK73H2ATD
|
BFQ67W
Abstract: PMBT3640 PMBTH10 BFM520
Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE
|
Original
|
PDF
|
OT143
OT223
OT323
BFT25
BF747
BF547
BF547W
BFS17
BFS17W
BF689K
BFQ67W
PMBT3640
PMBTH10
BFM520
|
Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1025
96GHz
215GHz
DS120613
|
A113
Abstract: AN1987 MW4IC2020GMBR1 MW4IC2020MBR1
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station
|
Original
|
PDF
|
MW4IC2020/D
MW4IC2020M
MW4IC2020MBR1
MW4IC2020GMBR1
A113
AN1987
MW4IC2020GMBR1
|
A113
Abstract: AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station
|
Original
|
PDF
|
MHVIC2114R2/D
MHVIC2114R2
MHVIC2114R2
A113
AN1955
AVX08051J1R0BBT
AVX08051J1R5BBT
AVX08051J2R2BBT
AVX08051J6R8BBT
TAJA105K035R
|
Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1025
RFHA1025
96GHz
215GHz
DS120928
|
PTMA080152M
Abstract: VARIABLE RESISTOR 2K BCP56 RO4350
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
|
Original
|
PDF
|
PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
VARIABLE RESISTOR 2K
BCP56
RO4350
|
Untitled
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3928
RF3928280W
DS120508
|
Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1025
RFHA1025
96GHz
215GHz
DS120613
|
ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3928280W
RF3928
RF3928
DS120119
ATC100B620
L22 amplifier
Gan hemt transistor RFMD
|
Untitled
Abstract: No abstract text available
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
|
Original
|
PDF
|
PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
|
hatching machine
Abstract: 100B8R2CW A113 AN1987 MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base
|
Original
|
PDF
|
MW4IC2230/D
MW4IC2230
MW4IC2230MBR1
MW4IC2230GMBR1
hatching machine
100B8R2CW
A113
AN1987
MW4IC2230GMBR1
TAJD106K035
|
A113
Abstract: AN1987 MHVIC2115R2
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHVIC2115R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2 The MHVIC2115R2 wideband integrated circuit is designed for base station
|
Original
|
PDF
|
MHVIC2115R2/D
MHVIC2115R2
MHVIC2115R2
A113
AN1987
|
28F0181-1SR-10
Abstract: CAPACITOR 150 RED
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3928280W
RF3928
RF3928
DS120508
28F0181-1SR-10
CAPACITOR 150 RED
|
|
|
Infineon moisture sensitive package
Abstract: rj0c
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
|
Original
|
PDF
|
PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
Infineon moisture sensitive package
rj0c
|
atc100a150
Abstract: power transistor gan s-band
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3928B
RF3928B
DS120503
atc100a150
power transistor gan s-band
|
Untitled
Abstract: No abstract text available
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the
|
Original
|
PDF
|
PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
|
Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3928B
DS120503
|
Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3928B
RF3928B
DS120503
|
GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3928280
RF3928
RF3928
DS110720
GaN hemt
power transistor gan s-band
air surveillance system diagram using radar
|
Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3928B
DS130313
|
100B120JP500X
Abstract: 100B430JP500X 100B4R7CP500X AN1955 C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a
|
Original
|
PDF
|
MW4IC001MR4/D
MW4IC001MR4
MW4IC001MR4
100B120JP500X
100B430JP500X
100B4R7CP500X
AN1955
C1210C104K5RACTR
RO4350
T491X226K035AS
|
CD723
Abstract: PCC104BCTND PCC104bct-nd PTMA210152
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the
|
Original
|
PDF
|
PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
CD723
PCC104BCTND
PCC104bct-nd
PTMA210152
|
RF3928B
Abstract: power transistor gan s-band RF392
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3928B
RF3928B
DS111208
power transistor gan s-band
RF392
|
