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Untitled Abstract: No abstract text available Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928 RF3928280W DS120508
ATC100B620 Abstract: L22 amplifier Gan hemt transistor RFMD Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD
thermocouple gaas Abstract: No abstract text available Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN	Original	PDF	RF3928280W RF3928 RF3928 DS110317 thermocouple gaas
28F0181-1SR-10 Abstract: CAPACITOR 150 RED Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED
35F0121-1SR-10 Abstract: ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology   	Original	PDF	RF3928280W RF3928 RF3928 DS110221 35F0121-1SR-10 ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR