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    VTE1281F Price and Stock

    Excelitas Technologies Corporation VTE1281FH

    Ir Emitting Diode; Viewing Angle:45°; Diode Case Style:T-1 3/4 (5Mm); Forward Current If(Av):100Ma; Forward Voltage Vf Max:1.5V; Rise Time:-; Fall Time Tf:-; Operating Temperature Min:-; Operating Temperature Max:-; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTE1281FH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark VTE1281FH Bulk 750
    • 1 -
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    RS VTE1281FH Bulk 1
    • 1 $0.81
    • 10 $0.77
    • 100 $0.69
    • 1000 $0.69
    • 10000 $0.69
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    Ozdisan Elektronik VTE1281FH
    • 1 $1.20989
    • 10 $1.20989
    • 100 $1.0999
    • 1000 $1.0999
    • 10000 $1.0999
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    VTE1281F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTE1281F PerkinElmer Optoelectronics GaAlAs Infrared Emitting Diode Original PDF

    VTE1281F Datasheets Context Search

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    VTE1281F

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1281F Flat T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26F T-1¾ (5 mm) FLAT CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter plastic packaged emitter has no lens. It is designed to be coupled to plastic fibers or used to illuminate an external


    Original     		PDF VTE1281F VTE1281F

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


    Original     		PDF VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285

    VTE1291-2

    Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
    Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher


    Original     		PDF VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2