97001A
Abstract: AN1001 AN-994
Text: PD - 97001A PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits
|
Original
|
PDF
|
7001A
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
AN1001)
O-220AB
O-262
97001A
AN1001
AN-994
|
AN1001
Abstract: AN-994 TO-262 Package
Text: PD - 97002 PROVISIONAL IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free l Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits
|
Original
|
PDF
|
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
AN1001)
O-220AB
O-262
IRFS52N15DPbF
AN-994.
AN1001
AN-994
TO-262 Package
|
TO-262 Package
Abstract: No abstract text available
Text: PD - 97001 PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits
|
Original
|
PDF
|
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
AN1001)
O-220AB
IRFB38N20DPbF
IRFS38N20DPbF
O-262
AN-994.
TO-262 Package
|
AN1001
Abstract: AN-994 TP720
Text: PD - 97001B PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits
|
Original
|
PDF
|
97001B
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
AN1001)
O-220AB
O-262
AN1001
AN-994
TP720
|
AN1001
Abstract: AN-994 IRFB52N15
Text: PD - 97002 PROVISIONAL IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free l Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits
|
Original
|
PDF
|
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
AN1001)
O-220AB
O-262
IRFS52N15DPbF
AN-994.
AN1001
AN-994
IRFB52N15
|
Untitled
Abstract: No abstract text available
Text: Si4808DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
|
Original
|
PDF
|
Si4808DY
Si4808DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
|
Original
|
PDF
|
Si4812DY
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
|
Original
|
PDF
|
Si4832DY
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
|
Original
|
PDF
|
Si4832DY
Si4832DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
|
Original
|
PDF
|
Si4830DY
Si4830DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
|
Original
|
PDF
|
Si4810DY
Si4810DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4834DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
|
Original
|
PDF
|
Si4834DY
Si4834DY-T1
08-Apr-05
|
Si4852DY
Abstract: Si4852DY-T1
Text: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage
|
Original
|
PDF
|
Si4852DY
Si4852DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si6404DQ New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 2.5-V Rated D 30-V VDS VDS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 11 APPLICATIONS 30 0.010 @ VGS = 4.5 V 10 0.014 @ VGS = 2.5 V 8.8 D Battery Switch
|
Original
|
PDF
|
Si6404DQ
08-Apr-05
|
|
|
Si1021R
Abstract: SC-75A Si1021R-T1-E3 S-81543-Rev
Text: Si1021R Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G RoHS COMPLIANT • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
|
Original
|
PDF
|
Si1021R
SC-75A
OT-416)
18-Jul-08
SC-75A
Si1021R-T1-E3
S-81543-Rev
|
SIHF18N50D
Abstract: No abstract text available
Text: SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
|
Original
|
PDF
|
SiHF18N50D
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
SIHF8N50D
Abstract: No abstract text available
Text: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
|
Original
|
PDF
|
SiHF8N50D
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness
|
Original
|
PDF
|
SiHD3N50DA
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
|
Original
|
PDF
|
SiHD3N50D
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
|
Original
|
PDF
|
SiHG22N50D
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
|
Original
|
PDF
|
IRF740B
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
|
Original
|
PDF
|
SiHP14N50D
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Am95C60 b
Abstract: No abstract text available
Text: Am8177 Video Data Serializer FINAL DISTINCTIVE CHARACTERISTICS 200-MHz parallel-to-serial shift register Cascadable in increments of 16 bits • 24-pin slim-lme DIP GENERAL DESCRIPTION The Am8177 Video Data Serializer VDS is a 16-bit parallel-to-serial shift register for use in bit-mapped display
|
OCR Scan
|
PDF
|
Am8177
200-MHz
24-pin
Am8177
16-bit
Am8151A
Am8172
Am95C60
Am8l77
Am95C60 b
|
AM8177
Abstract: DD15 Am8151
Text: Am 8177 Video Data Serializer FINAL DISTINCTIVE CHARACTERISTICS 200-MHz parallel-to-serial shift register Cascadable in increments of 16 bits • 24-pin slirn-line DIP GENERAL DESCRIPTION The Am 8177 Video Data Serializer VDS is a 16-bit parallel-to-serial shift register for use in bit-mapped display
|
OCR Scan
|
PDF
|
Am8177
200-MHz
24-pin
Am8177
16-bit
Am8151A
Am8172
Am95C60
WF010561
DD15
Am8151
|
