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Vishay Siliconix SIHP14N50D-E3 MOSFET N-CH 500V 14A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP14N50D-E3	Tube			1,000	1 - 10 - 100 - 1000 $1.25545 10000 $1.25545	Buy Now
Bristol Electronics	SIHP14N50D-E3		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIHP14N50D-GE3 MOSFET N-CH 500V 14A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP14N50D-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.25545 10000 $1.25545	Buy Now
Vishay Intertechnologies SIHP14N50D-GE3 Mosfet Transistor, N Channel, 14 A, 500 V, 0.32 Ohm, 10 V, 3 V Rohs Compliant: Yes \|Vishay SIHP14N50D-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SIHP14N50D-GE3	Bulk			1	1 $3.05 10 $2.58 100 $2.1 1000 $1.79 10000 $1.79	Buy Now
TME	SIHP14N50D-GE3				1	1 $2.62 10 $2.2 100 $1.74 1000 $1.39 10000 $1.39	Get Quote
Vishay Intertechnologies SIHP14N50D-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIHP14N50D-E3		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHP14N50D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHP14N50D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-200AB		Original	PDF
SIHP14N50D-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-200AB		Original	PDF

SIHP14N50D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mosfet to-220ab Abstract: 91512 SiHP14N50D Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHP14N50D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 mosfet to-220ab 91512
Untitled Abstract: No abstract text available Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHP14N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHP14N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHP14N50D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHP14N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHP14N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHP14N50D AN609, 7252m 6040m 6395m 6003m 7660m 5478m 6766m 5019m
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	PDF	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836