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    UT 16M Search Results

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    UT 16M Price and Stock

    CIT Relay & Switch CIT-HEX-NUT-16MM-M16X1.0

    CIT HEX NUT 16MM M16X1.1
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    DigiKey CIT-HEX-NUT-16MM-M16X1.0 Bag 178 1
    • 1 $1.01
    • 10 $0.917
    • 100 $0.855
    • 1000 $0.75045
    • 10000 $0.69967
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    Molex 02-09-2116

    Pin & Socket Connectors .093 TERM 18-22G M Reel of 7000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 02-09-2116 287,000
    • 1 -
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    • 10000 $0.042
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    02-09-2116 4,300
    • 1 -
    • 10 -
    • 100 $0.078
    • 1000 $0.078
    • 10000 $0.078
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    02-09-2116 4,000
    • 1 -
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    • 1000 $0.061
    • 10000 $0.061
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    Molex 16-02-0116

    Headers & Wire Housings SL TERM 22-24G MALE Reel of 20000
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    Mouser Electronics 16-02-0116 20,000
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    16-02-0116 15,000
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    • 1000 $0.146
    • 10000 $0.142
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    16-02-0116 7,700
    • 1 -
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    • 100 $0.205
    • 1000 $0.205
    • 10000 $0.205
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    TE Connectivity 163301-6

    Pin & Socket Connectors PIN PRE-TIN Reel of 4500
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 163301-6 13,500
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    • 10000 $0.125
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    163301-6 1,000
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    • 1000 $0.162
    • 10000 $0.162
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    163301-6 700
    • 1 -
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    • 100 $0.194
    • 1000 $0.194
    • 10000 $0.194
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    onsemi SZESD7016MUTAG

    ESD Protection Diodes / TVS Diodes LOW CAP TVS FOR USB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SZESD7016MUTAG 11,145
    • 1 $0.73
    • 10 $0.569
    • 100 $0.424
    • 1000 $0.334
    • 10000 $0.292
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    Find more UT 16M price and stock on Findchips.com

    UT 16M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    asus

    Abstract: verilog code for barrel shifter zspa verilog code for 16 bit barrel shifter ASUS l asus diagram asus block diagram
    Text: S YSTEM L EVEL I NTEGRATION EMBEDDED PALMDSPCORE SYSTEM Syst em C lock Data In/O ut rce Mas te Cloc r k Flas h/R Prog OM ram SR Wor AM kspa ce Sou EEP RO Data M Em Micr bedded ocon tr Core oller Cac h Mem e ory Micr oco Peri ntroller pher als Data In/O ut


    Original     		PDF 18micron 18-micron 20-bit asus verilog code for barrel shifter zspa verilog code for 16 bit barrel shifter ASUS l asus diagram asus block diagram

    milli farad capacitor

    Abstract: failure rate avx 0201 ceramic capacitor 1 micro farad capacitor 821 ceramic capacitor capacitor 47 nano UT023
    Text: Ultrathin Chip Capacitors UT Series GENERAL DESCRIPTION The Ultrathin Chip Capacitors have been introduced to compliment the standard chip capacitors providing a lower profile height to the end user. With advances in standard ceramic chip capacitor technology,


    Original     		PDF 50Vdc, 25Vdc, 16Vdc 10Vdc, milli farad capacitor failure rate avx 0201 ceramic capacitor 1 micro farad capacitor 821 ceramic capacitor capacitor 47 nano UT023

    Untitled

    Abstract: No abstract text available
    Text: Ultrathin Chip Capacitors UT Series GENERAL DESCRIPTION The Ultrathin Chip Capacitors have been introduced to compliment the standard chip capacitors providing a lower profile height to the end user. With advances in standard ceramic chip capacitor technology,


    Original     		PDF 50Vdc, 25Vdc 16Vdc,

    0.04 micro farad ceramic capacitor

    Abstract: T0-32
    Text: Ultrathin Chip Capacitors UT Series GENERAL DESCRIPTION The Ultrathin Chip Capacitors have been introduced to compliment the standard chip capacitors providing a lower profile height to the end user. With advances in standard ceramic chip capacitor technology,


    Original     		PDF 50Vdc, 25Vdc 16Vdc, 0.04 micro farad ceramic capacitor T0-32

    SPI300T8AG

    Abstract: No abstract text available
    Text: Sparkle Power Inc. A Leading Power Supply Manufacturer Web site: www.sparklepower.com UT SPI300T8AG RoHS Compliant 300 Watts TFX12V Switching Power Supply Features • Complied with TFX12V standard  Active Power Factor Correction (PFC) meet EPA  High efficiency and reliability


    Original     		PDF SPI300T8AG TFX12V 2002/95/EC 115Vac CUL/UL60950-1, EN60950-1 175x85x65mm 264Vac SPI300T8AG

    adm5120p

    Abstract: ADM5120 CAS IE 116 weighting systems jrc 2114 biss 0001 RMCF 1/16 1K 1% R EC Bus body marking MCL MCC 26 16 101B SOCRATES
    Text: Data Sheet, Rev. 1.32, Nov. 2005 ADM5120P/PX Di st rib ut io n wi th ND A Network Processor Version AB Communications Edition 2005-11-09 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.


    Original     		PDF ADM5120P/PX adm5120p ADM5120 CAS IE 116 weighting systems jrc 2114 biss 0001 RMCF 1/16 1K 1% R EC Bus body marking MCL MCC 26 16 101B SOCRATES

    HY51V17404A

    Abstract: No abstract text available
    Text: «HYUNDAI HY51V17404A, HY51V16404A 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Extended Data O ut m ode CM O S DRAMs. Extended Data O ut mode


    OCR Scan     		PDF HY51V17404A, HY51V16404A HY51V17404AJ HY51V17404ASLJ HY51V17404AT HY51V17404ASLT HY51V16404AJ HY51V16404ASLJ HY51V16404AT HY51V16404ASLT HY51V17404A

    HY5117804B

    Abstract: 5117804b HY5117804
    Text: HYUNDAI HY5117804B>HY51168046 2M X 8-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 2,097,152 x 8-bit configuration with Extended Data O ut n o d e CM O S DRAMs. Extended Data O ut m ode


    OCR Scan     		PDF HY5117804B HY51168046 HY5117804BJ HY5117804BSLJ HY5117804BT HY5117804BSLT HY5116804BJ HY5116804BSLJ Y5116804BT HY5116804BSLT 5117804b HY5117804

    44v16104

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consum ption(Norm al


    OCR Scan     		PDF KM44V16004B, KM44V16104B 16Mx4 400mil 44v16104

    44c16104

    Abstract: TC 32 DON
    Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or


    OCR Scan     		PDF KM44C16004B, KM44C16104B 16Mx4 KM44C16004B 44C16104B 400mil 44c16104 TC 32 DON

    PCD3-24-1212

    Abstract: PCD3-5-1212 PCD1R5-24-1212 PCD1R5-5-1212 PCD3-12-1212 PCD6-5-1212
    Text: LAMBDA/k PCD-SERIES Dual output DC-DC converter 1.5W ~ 6W DENSEI-LAMBDA Model name PCD 6 - 24 1212 S e rie s n am e O utp ut p ow e r Input voltag e O utp ut vo ltag e • Features • • • • • Input/Output isolation 5 dimensions shield metal case Over current protection


    OCR Scan     		PDF PCD1R5-5-1212 R5-12-1212 PCD1R5-24-1212 12V0C 24VDC 8-36V) 48VDC 28MAX 16MAX 26MAX PCD3-24-1212 PCD3-5-1212 PCD1R5-24-1212 PCD1R5-5-1212 PCD3-12-1212 PCD6-5-1212

    Untitled

    Abstract: No abstract text available
    Text: KM416C4004B, KM416C4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-5 or -6) are optional features of this family.


    OCR Scan     		PDF KM416C4004B, KM416C4104B 16bit 4Mx16 416C4004B 416C4104B

    HY5118164B

    Abstract: HY5116164B
    Text: •H YUN DAI H Y 5 1 1 8 1 6 4 B ,H Y 5 1 1 6 1 6 4 B 1Mx16, E xten ded Data O ut m ode DESCRIPTION T h is fa m ily is a 16M bit d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 1 6 -b it c o n fig u ra tio n w ith E xte n d e d D ata O ut m ode C M O S


    OCR Scan     		PDF HY5118164B HY5116164B 1Mx16, 16-bit A0-A11) DQ0-DQ15)

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fam ily of 16 ,777,216 x 4 bit Extended Data O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access o f m em ory cells w ithin the sam e row. R efresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5, o r -6), po w e r co n sum p tion(N orm a l


    OCR Scan     		PDF KM44V16004C KM44V16104C 400mil

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004C, KM44V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended D ata O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Pow er supply volta g e + 5 .0V or +3.3V , access


    OCR Scan     		PDF KM44C1004C, KM44V1004C

    be5e

    Abstract: 31DQ3
    Text: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1 ,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended Data O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Power supply vo lta g e + 5 .0V or +3.3V , access


    OCR Scan     		PDF KM44C1004C, KM44V1004C be5e 31DQ3

    C2004A

    Abstract: KM48C2104A
    Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2 M x 8 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 2 ,0 97 ,1 5 2 x 8 bit E xtended Data O ut C M O S DRAM s. E xtended D ata O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Pow er supply


    OCR Scan     		PDF KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A C2004A

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM432C515, KM432V515 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION T his is a 524,288 x 32 bit E xtended D ata O ut C M O S DRAM . E xtended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page M ode. P ow er sup ply v oltage +5.0V o r +3.3V , refresh cycle 1 K, acce ss tim e (-5 o r -6), pow er


    OCR Scan     		PDF KM432C515, KM432V515 32Bit

    3a92

    Abstract: No abstract text available
    Text: •H YU ND AI HY51V17404C, HY51V16404C 4M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -b it configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data Out m ode


    OCR Scan     		PDF HY51V17404C, HY51V16404C Y51V17404CJ HY51V17404CSLJ Y51V17404CT HY51V17404CSLT HY51V16404CJ HY51V16404CSLJ HY51V16404CT HY51V16404CSLT 3a92

    8104b

    Abstract: No abstract text available
    Text: Preliminary SPEC CMOS DRAM KM48V8004B, KM48V8104B 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 8,3 88,60 8 x 8 bit Extended D ata O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access of m em o ry cells w ith in the sam e row. R efresh cycle 4 K Ref. o r 8K Ref. , access tim e (-4, -5 o r -6), po w e r co n su m p tio n (N o rm a l or


    OCR Scan     		PDF KM48V8004B, KM48V8104B 8104b

    Untitled

    Abstract: No abstract text available
    Text: »fl Y U H Dfl I * HY51V18164C,HY51V16164C 1U xie, Extended Data O ut mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY51V18164C HY51V16164C 16-bit 18-bit A0-A11) DQ0-DQ15)

    trw 8040

    Abstract: No abstract text available
    Text: IBM11M16735B IBM11M16735C 16M x 72 DRAM MODULE Features • 168 Pin JE D E C Standard, 8 Byte Dual In-line M em ory M odule • O ptim ized for ECC applications • 16M x72 Extended Data O ut EDO M ode D IM M s • System Perform ance Benefits: - Buffered inputs (except RAS, Data)


    OCR Scan     		PDF IBM11M16735B IBM11M16735C 104ns SA14-4631-05 trw 8040

    HY5117404

    Abstract: No abstract text available
    Text: “H Y U N D A I HY5117404B, HY5116404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -b it configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data Out m ode


    OCR Scan     		PDF HY5117404B, HY5116404B HY5117404BJ HY5117404BSLJ HY5117404BT HY5117404BSLT HY5116404BJ HY5116404BSLJ Y5116404BT HY5116404BSLT HY5117404

    Untitled

    Abstract: No abstract text available
    Text: TIC INFORMATION CONTAINED « R E IN IS CONSIDERED •PROPRIETARY* TO BEL FUSE INC. AND SHALL NOT BE COPIED. REPRODUCED OR DISCLOSED VITW UT THE WRITTEN APPROVAL OF BEL FUSE INC. IPRELIM IN ARŸ] ELECTRICAL CHARACTERISTICS <655*0 NOMINAL TURNS RATIO: <8-5 : <1-4)


    OCR Scan     		PDF S5606600KAPA G0S03SE9B