Untitled
Abstract: No abstract text available
Text: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal
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KM44V16004C
KM44V16104C
16Mx4
400mil
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Untitled
Abstract: No abstract text available
Text: KMM372F320 8 0CK4 DRAM MODULE KMM372F320(8)0CK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0CK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0CK4 consists of thirty-six CMOS 16Mx4bits
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KMM372F320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
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KMM372F3200CS1
Abstract: KMM372F3280CS1
Text: KMM372F320 8 0CS1 DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6
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KMM372F320
000DIA±
150Max
81Max)
16Mx4
KMM372F3200CS1
KM44V16104CS.
KMM372F3280CS1
KM44V16004CS.
01Max
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F160 8 0CK2 KMM366F160(8)0CK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0CK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0CK2 consists of sixteen CMOS 16Mx4bits
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KMM366F160
16Mx4,
16Mx64bits
16Mx4bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM374F160 8 0CK1 DRAM MODULE KMM374F160(8)0CK1 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F160(8)0CK1 is a 16Mx72bits Dynamic RAM high density memory module. The Samsung
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KMM374F160
16Mx4,
16Mx72bits
16Mx4bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM372F160 8 0CK/CS DRAM MODULE KMM372F160(8)0CK/CS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F160(8)0C is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F160(8)0C consists of eighteen CMOS 16Mx4bits
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KMM372F160
16Mx4,
16Mx72bits
16Mx4bits
400mil
168-pin
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IC 1458
Abstract: KMM372F3200CS1 KMM372F3280CS1 KM44V16104 KM44V16004
Text: KMM372F320 8 0CS1 DRAM MODULE KMM372F320(8)0CS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0C1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0C1 consists of thirty-six CMOS 16Mx4bits
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KMM372F320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
IC 1458
KMM372F3200CS1
KMM372F3280CS1
KM44V16104
KM44V16004
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Untitled
Abstract: No abstract text available
Text: KMM372F320 8 0CK3 DRAM MODULE KMM372F320(8)0CK3 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0C is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0C consists of thirty-six CMOS 16Mx4bits
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KMM372F320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM374F160 8 0CK3 DRAM MODULE KMM374F160(8)0CK3 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F160(8)0CK3 is a 16Mx72bits Dynamic RAM high density memory module. The Samsung
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PDF
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KMM374F160
16Mx4,
16Mx72bits
16Mx4bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fam ily of 16 ,777,216 x 4 bit Extended Data O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access o f m em ory cells w ithin the sam e row. R efresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5, o r -6), po w e r co n sum p tion(N orm a l
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KM44V16004C
KM44V16104C
400mil
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k2917
Abstract: No abstract text available
Text: KM44V16004C,KM44V16104C CMOS DRAM 1 6 M x 4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal
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OCR Scan
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KM44V16004C
KM44V16104C
400mil
k2917
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