UPD48288236 Search Results

UPD48288236 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPD48288236AFF-E18-DW1-A		Renesas Electronics Corporation	Low Latency DRAM, T-TFBGA, /Tray
UPD48288236AF1-E24-DW1-A		Renesas Electronics Corporation	Low Latency DRAM, TFBGA, /Tray
UPD48288236AFF-E24-DW1		Renesas Electronics Corporation	Low Latency DRAM, T-TFBGA, /Tray
UPD48288236AF1-E18-DW1-A		Renesas Electronics Corporation	Low Latency DRAM, TFBGA, /Tray
UPD48288236AFF-E24-DW1-A		Renesas Electronics Corporation	Low Latency DRAM, T-TFBGA, /Tray

UPD48288236 Price and Stock

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Rochester Electronics LLC UPD48288236FF-EF25-DW1 DDR DRAM, 8MX36
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPD48288236FF-EF25-DW1	Bulk			7	1 - 10 $47.44 100 $47.44 1000 $47.44 10000 $47.44	Buy Now
Rochester Electronics LLC UPD48288236AFF-E33-DW1 DDR DRAM, 8MX36
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPD48288236AFF-E33-DW1	Bulk			7	1 - 10 $47.44 100 $47.44 1000 $47.44 10000 $47.44	Buy Now
Rochester Electronics LLC UPD48288236AF1-E50-DW1-A DDR DRAM, 16MX18
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPD48288236AF1-E50-DW1-A	Bulk			13	1 - 10 - 100 $24.68 1000 $24.68 10000 $24.68	Buy Now
Rochester Electronics LLC UPD48288236FF-EF26-DW1-A DDR DRAM, 8MX36
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPD48288236FF-EF26-DW1-A	Bulk			7	1 - 10 $47.44 100 $47.44 1000 $47.44 10000 $47.44	Buy Now
Rochester Electronics LLC UPD48288236AFF-E18-DW1-A DDR DRAM, 8MX36
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPD48288236AFF-E18-DW1-A	Bulk			7	1 - 10 $47.44 100 $47.44 1000 $47.44 10000 $47.44	Buy Now

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UPD48288236 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology	Original	PDF	PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236 PD48288236
E33-DW1 Abstract: PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron Text: インフォメーション 288M Low Latency DRAMと他社互換製品の互換性資料番号 M19702JJ1V0IF00（第1版）発行年月 March 2009 NS NEC Electronics Corporation 2009 〔メモ〕 2 インフォメーション M19702JJ1V0IF CMOSデバイスの一般的注意事項	Original	PDF	M19702JJ1V0IF001 M19702JJ1V0IF PD48288236 PD48288218 PD48288209 PD48288118 PD48288209, PD48288118 E33-DW1 PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
Untitled Abstract: No abstract text available Text: Datasheet PD48288209-A μPD48288218-A μPD48288236-A R10DS0156EJ0100 Rev.1.00 Feb 01, 2013 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209-A is a 33,554,432-word by 9 bit, the μPD48288218-A is a 16,777,216 word by 18 bit and the μPD48288236-A is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced	Original	PDF	PD48288209-A PD48288218-A PD48288236-A 288M-BIT 432-word R10DS0156EJ0100 PD48288236-A PD48288209-A,
BGA15 Abstract: 72M-BIT samsung ddr quad data rate SRAM idt 150-NM Text: 2009.9 2009.9 Ᏹߦᦨవ┵ࡔࡕ࡝⵾ຠࠍ㐿⊒ߒߡ߈ߚᛛⴚജࠍᵴ߆ߒ ᤨઍߩ࠾࡯࠭ߦวߞߚᣂߒ޿ࡔࡕ࡝໡ຠࠍ㐿⊒ߒߡ߹޿ࠅ߹ߔ‫ޕ‬ NECࠛ࡟ࠢ࠻ࡠ࠾ࠢࠬߪ㧘ࡔࡕ࡝੐ᬺಽ㊁ߦ߅޿ߡᏱߦᦨవ┵ߩᛛⴚࠍᛩ౉ߒ㧘	Original	PDF	M16000JJHV0SG 150nm 144pin PD48288118 M16000JJHV0SG00 BGA15 72M-BIT samsung ddr quad data rate SRAM idt 150-NM
PD48288236FF-EF25-DW1-A Abstract: 4828 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	M8E0904E PD48288236FF-EF25-DW1-A 4828
PD48288236FF-EF25-DW1-A Abstract: PD482 Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209-A, 48288218-A, 48288236-A 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209-A is a 33,554,432-word by 9 bit, the μPD48288218-A is a 16,777,216 word by 18 bit and the μPD48288236-A is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced	Original	PDF	PD48288209-A, 8288218-A, 8288236-A 288M-BIT PD48288209-A 432-word PD48288218-A PD48288236-A PD48288236FF-EF25-DW1-A PD482
PD48288236 Abstract: No abstract text available Text: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with	Original	PDF	PD48288209A PD48288218A PD48288236A 288M-BIT 432-word 216-word PD48288236A 608-word PD48288236
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology	Original	PDF	PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236
IMAPCAR Abstract: QTH-060-05-L-D-A uPD48288236 8830E-026-170S-F QTH-060-05 UPD70F3134AYGJ-UEN-A IMAPCAR2 nec V20 microcontroller QSH-060-01-L-D-A EPMC Text: User’s Manual IMAPCAR2-300-USB board Hardware Document No. EPMC-PU-0115-1.0 Date Published: May 2009 NEC Electronics Europe GmbH Legal Notes The information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC	Original	PDF	IMAPCAR2-300-USB EPMC-PU-0115-1 47KPUP IMAPCAR QTH-060-05-L-D-A uPD48288236 8830E-026-170S-F QTH-060-05 UPD70F3134AYGJ-UEN-A IMAPCAR2 nec V20 microcontroller QSH-060-01-L-D-A EPMC
DDQ15 Abstract: PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	M19702JJ1V0IF001 M19702JJ1V0IF DDQ15 PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM
A12Y Abstract: A10y nec ddr PD48288236 SUNRISE TSOP 12 20 Text: December 2008 2008.12 NEC Electronics will develop much more new memory products to meet the customer needs by making use of the high technical capabilities accumulated through the long development experience in leading-edge memory products. NEC Electronics has been continuously dedicating the cutting-edge	Original	PDF	G0706 M16000EJGV0SG00 A12Y A10y nec ddr PD48288236 SUNRISE TSOP 12 20
PD48288236A Abstract: No abstract text available Text: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with	Original	PDF	PD48288209A PD48288218A PD48288236A 288M-BIT 432-word 216-word PD48288236A 608-word
Untitled Abstract: No abstract text available Text: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with	Original	PDF	PD48288209A PD48288218A PD48288236A 288M-BIT 432-word 216-word PD48288236A 608-word

Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology	Original	PDF	PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236
EF25 Abstract: semiconductor quality assurance office organization samsung ddr 72M-Bit 1M x 72 Text: September 2009 2009.9 NEC Electronics will develop much more new memory products to meet the customer needs by making use of the high technical capabilities accumulated through the long development experience in leading-edge memory products. NEC Electronics has been continuously dedicating the cutting-edge	Original	PDF	G0706 M16000EJHV0SG00 EF25 semiconductor quality assurance office organization samsung ddr 72M-Bit 1M x 72