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    UPA826 Price and Stock

    NEC Electronics Group UPA826TC-T1-A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPA826TC-T1-A 3,520
    • 1 $8.4
    • 10 $8.4
    • 100 $8.4
    • 1000 $4.2
    • 10000 $4.2
    Buy Now

    NEC Electronics Group UPA826TC-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPA826TC-T1 3,480
    • 1 $3.78
    • 10 $3.78
    • 100 $3.78
    • 1000 $1.89
    • 10000 $1.89
    Buy Now

    UPA826 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    uPA826 NEC Semiconductor Selection Guide Original PDF
    UPA826TC NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD Original PDF
    UPA826TC NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR Original PDF
    uPA826TC NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMO Original PDF
    UPA826TC-T1 NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD Original PDF
    uPA826TC-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMO Original PDF
    UPA826TF NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR Original PDF
    uPA826TF NEC HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2S Original PDF
    UPA826TF-T1 NEC NPN silicon epitaxial twin transistor. Original PDF

    UPA826 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UPA826TC-T1

    Abstract: BF109 NE685 S21E UPA826TC vaf meter
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency


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    UPA826TC OT-363 UPA826TC NE685 UPA826TC-T1 BF109 S21E vaf meter PDF

    pin IC 7479

    Abstract: NE685 S21E UPA826TF UPA826TF-T1 pt 6964
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • • • • UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package


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    UPA826TF NE685 UPA826TF UPA826TF-T1 24-Hour pin IC 7479 S21E UPA826TF-T1 pt 6964 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency


    Original
    OT-363 UPA826TC UPA826TC NE685 UPA826TC-T1, 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS BF 7e-16 MJC 0.34 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 0.01 VAR 12.4 ITF IKR Infinity PTF


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    UPA826TC 7e-16 9e-13 4e-12 18e-12 3e-12 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 PDF

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


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    NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G PDF

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original
    24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 PDF

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor PDF

    transistor c 3531

    Abstract: UPA826
    Text: PRELIMINARY DATA SHEET UPA826TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Package Outline TS 06 (Top View) Cre = 0.4 pF TYP SMALL PACKAGE STYLE:


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    UPA826TF NE685 UPA826TF PA826TF-T1 24-Hour transistor c 3531 UPA826 PDF

    HA 12045

    Abstract: IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package


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    UPA826TF NE685 UPA826TF UPA826TF-T1 HA 12045 IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor PDF

    k 3531 transistor

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF OUTLINE DIMENSIONS Units FEATURES • • • LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: • SMALL PACKAGE STYLE: in mm P ackage Outline T S 06 (Top View)


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    UPA826TF NE685 UPA826TF for-27 UPA826TF-T1 24-Hour k 3531 transistor PDF

    7082 B ic audio amplifier

    Abstract: SN 16880 14 pin ic 4027 TRANSISTOR NPN 16085 TRANSISTOR SN 532-3 NEC 4570 IC 7487 transistor lc 7822 n transistor 9527 IC AT 6884
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD PACKAG E DRAWINGS (U nit: mm) FEATURES • Low noise and high gain •


    OCR Scan
    uPA826TF 2SC4959) /xPA826TF /xPA826TF-T 7082 B ic audio amplifier SN 16880 14 pin ic 4027 TRANSISTOR NPN 16085 TRANSISTOR SN 532-3 NEC 4570 IC 7487 transistor lc 7822 n transistor 9527 IC AT 6884 PDF

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


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    NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF PDF

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


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    UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363 PDF