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    UNR1119 Search Results

    UNR1119 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR1119 Panasonic Silicon PNP epitaxial planer transistor with biult-in resistor Original PDF
    UNR1119 Panasonic Silicon PNP Epitaxial Planar Transistor Original PDF

    UNR1119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UN1119

    Abstract: UN221N UNR1119 UNR221N XP04286
    Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1


    Original     		PDF XP04286 UNR221N UN221N) UNR1119 UN1119) UN1119 UN221N XP04286

    UN1119

    Abstract: UNR1119 XP01119 XP1119
    Text: Composite Transistors XP01119 XP1119 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1119(UN1119) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP01119 XP1119) UNR1119 UN1119) UN1119 XP01119 XP1119

    UN1119

    Abstract: UNR1119 XN01119 XN1119
    Text: Composite Transistors XN01119 XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1119(UN1119) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01119 XN1119) UNR1119 UN1119) UN1119 XN01119 XN1119

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		PDF UNR111x UN111x UNR1110 UNR1111 UNR1112

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)


    Original     		PDF 2002/95/EC) UP04387 UNR1119 UNR1213

    UN1119

    Abstract: UNR1119 XP01119 XP1119
    Text: Composite Transistors XP01119 XP1119 Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP01119 XP1119) UNR1119 UN1119) UN1119 XP01119 XP1119

    UP04387

    Abstract: UNR1119 UNR1213
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) UP04387 UP04387 UNR1119 UNR1213

    UNR1110

    Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ


    Original     		PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119

    UN1119

    Abstract: UNR1119 XN01119 XN1119
    Text: Composite Transistors XN01119 XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 (0.65) 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element


    Original     		PDF XN01119 XN1119) UNR1119 UN1119) UN1119 XN01119 XN1119

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)


    Original     		PDF 2002/95/EC) UP04387 UNR1119 UNR1213

    common collector PNP

    Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ


    Original     		PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) common collector PNP UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118

    UP04387

    Abstract: UNR1119 UNR1213
    Text: Composite Transistors UP04387 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF UP04387 UP04387 UNR1119 UNR1213

    UNR1111

    Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits


    Original     		PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112

    1117 S Transistor

    Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and


    Original     		PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119