Untitled
Abstract: No abstract text available
Text: STS5N15M3 N-channel 150V - 45mΩ - 4.5A - SO-8 Ultra low gate charge MDmesh III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STS5N15M3 150V <0.057Ω 4.5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance
|
Original
|
STS5N15M3
STS5N15M3
|
PDF
|
JESD97
Abstract: No abstract text available
Text: STSJ25N15M3 N-channel 150V - 45mΩ - 5A - PowerSO-8 Ultra low gate charge MDmesh™ III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STSJ25N15M3 150V <0.057Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance
|
Original
|
STSJ25N15M3
JESD97
|
PDF
|
MDMESH
Abstract: STS5N15M3 JESD97
Text: STS5N15M3 N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh III Power MOSFET Features Type VDSS RDS on max ID STS5N15M3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance ■
|
Original
|
STS5N15M3
MDMESH
STS5N15M3
JESD97
|
PDF
|
JESD97
Abstract: STS5N15M3
Text: STS5N15M3 N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh III Power MOSFET Features Type VDSS RDS on max ID STS5N15M3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance ■
|
Original
|
STS5N15M3
JESD97
STS5N15M3
|
PDF
|
PI5101
Abstract: No abstract text available
Text: PI5101 RDS on FETTM Series 360μΩ, 5V/60A N-Channel MOSFET Product Summary Features Ultra Low “micro-Ohm” RDS(on) Extremely Low Gate Charge Very Low Gate Resistance High Density, Low Profile Very Low Package Inductance Low Thermal Resistance
|
Original
|
PI5101
V/60A
60ADC
PI5101
PI5101-00-LGIZ
|
PDF
|
APT94N65B2C3
Abstract: APT94N65B2C3G APT94N65B2
Text: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D
|
Original
|
APT94N65B2C3
APT94N65B2C3G*
APT94N65B2C3S
O-247
APT94N65B2C3
APT94N65B2C3G
APT94N65B2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT97N65B2C6 APT97N65LC6 650V 97A 0.041 APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extremedv/dt Rated
|
Original
|
APT97N65B2C6
APT97N65LC6
O-264
APT97N65B2
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
|
Original
|
APTC60HM70RT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
|
Original
|
APTC60HM70RT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70m max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
|
Original
|
APTC60HM70RT3G
|
PDF
|
SIPC03N60S5
Abstract: No abstract text available
Text: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5
|
Original
|
SIPC03N60S5
80mm2
5343N,
SIPC03N60S5
|
PDF
|
SIPC05N60S5
Abstract: No abstract text available
Text: Preliminary SIPC05N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC05N60S5
|
Original
|
SIPC05N60S5
5313N,
SIPC05N60S5
|
PDF
|
SIPC03N60S5
Abstract: No abstract text available
Text: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5
|
Original
|
SIPC03N60S5
80mm2
5343S,
SIPC03N60S5
|
PDF
|
SIPC14N60S5
Abstract: No abstract text available
Text: Preliminary SIPC14N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC14N60S5
|
Original
|
SIPC14N60S5
Q67050-A4093
5363S,
SIPC14N60S5
|
PDF
|
|
sp*20n60c3
Abstract: SPD06S60
Text: APT20N60BC3 APT20N60SC3 600V 20.7A 0.190Ω Super Junction MOSFET D3PAK COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package
|
Original
|
APT20N60BC3
APT20N60SC3
O-247
O-247
Le113)
sp*20n60c3
SPD06S60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package D
|
Original
|
APT47N60BC3
APT47N60SC3
O-247
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg
|
Original
|
APT31N60BCS
APT31N60SCS
APT31N60BCSG*
APT31N60SCSG*
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT20N60BC3 APT20N60SC3 600V 20.7A 0.190Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package
|
Original
|
APT20N60BC3
APT20N60SC3
O-247
O-247
APT17N80BC3
|
PDF
|
SIPC69N60C2
Abstract: No abstract text available
Text: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2
|
Original
|
SIPC69N60C2
Q67050A4073-A001
5443-N,
SIPC69N60C2
|
PDF
|
SIPC26N60C2
Abstract: No abstract text available
Text: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2
|
Original
|
SIPC26N60C2
Q67050A4087-A001
5433N,
SIPC26N60C2
|
PDF
|
SIPC10N60S5
Abstract: No abstract text available
Text: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5
|
Original
|
SIPC10N60S5
Q67050A4072-A001
5353-N,
SIPC10N60S5
|
PDF
|
SIPC10N60C2
Abstract: No abstract text available
Text: Preliminary SIPC10N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60C2
|
Original
|
SIPC10N60C2
Q67050A4090-A001
5353P,
SIPC10N60C2
|
PDF
|
SIPC06N60S5
Abstract: Infineon CoolMOS
Text: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5
|
Original
|
SIPC06N60S5
5423N,
SIPC06N60S5
Infineon CoolMOS
|
PDF
|
5423S
Abstract: SIPC06N60S5
Text: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5
|
Original
|
SIPC06N60S5
5423S,
5423S
SIPC06N60S5
|
PDF
|