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Abstract: No abstract text available
Text: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications
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RSL020P03
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Abstract: No abstract text available
Text: RTL035N03FRA RTL035N03 Transistors 2.5V Drive Nch MOSFET AEC-Q101 Qualified RTL035N03FRA RTL035N03 zDimensions Unit : mm zStructure Silicon N-channel MOSFET TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6).
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RTL035N03FRA
RTL035N03
AEC-Q101
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us6k
Abstract: No abstract text available
Text: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 2.0 0.85Max. (4) (3) 0.77 1pin mark 0.2 (2) (1) 0~0.1 0.17 0.3 Abbreviated symbol : K02 zApplications Switching zPackaging specifications zInner circuit
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85Max.
15Max.
us6k
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RZL035P01
Abstract: TUMT6
Text: 1.5V Drive Pch MOSFET RZL035P01 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YB zApplication Switching zPackaging specifications
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RZL035P01
R0039A
RZL035P01
TUMT6
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TUMT6
Abstract: Rl86 n-channel 2.5v mosfet Z diode RTL035N03
Text: RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM
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RTL035N03
TUMT6
Rl86
n-channel 2.5v mosfet
Z diode
RTL035N03
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RTL030P02
Abstract: No abstract text available
Text: RTL030P02 Transistors 2.5V Drive Pch MOSFET RTL030P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. (90mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Abbreviated symbol : WN
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RTL030P02
RTL030P02
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Abstract: No abstract text available
Text: US6X3 Transistors Low frequency amplifier 12V, 3A US6X3 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) : max. 250mV At lc=1.5A / lB=30mA ROHM : TUMT6 zEquivalent circuit
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250mV
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TUMT6
Abstract: No abstract text available
Text: US6X5 Transistors Low frequency amplifier 12V, 2A US6X5 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) : max. 370mV At lc=1.5A / lB=75mA ROHM : TUMT6 zAbsolute maximum ratings (Ta=25°C)
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370mV
TUMT6
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Untitled
Abstract: No abstract text available
Text: US6T4 Transistors Low frequency amplifier US6T4 zDimensions Unit : mm 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) : max. −250mV At IC=−1.5A / IB=−30mA ROHM : TUMT6 zEquivalent circuit zAbsolute maximum ratings (Ta=25°C)
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-250mV
-30mA
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Untitled
Abstract: No abstract text available
Text: US6X7 Transistors General purpose amplification 12V, 1.5A US6X7 (2) (6) (1) 0.2 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 0.15Max. 標印略記号 : X07 ROHM : TUMT6 zAbsolute maximum ratings (Ta=25°C) zEquivalent circuit Symbol Limits Unit Collector-base voltage
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200mV
500mA
85Max.
15Max.
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IB201
Abstract: No abstract text available
Text: US6X7 Transistors General purpose amplification 12V, 1.5A US6X7 (6) (1) 0.2 1.7 1.3 (2) 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 2.0 (3) (5) 0.85Max. zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 200mV
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15Max.
IB201
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Untitled
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Text: US6X8 Transistors General purpose amplification 30V, 1A US6X8 (6) (1) 0.2 1.7 0.77 0~0.1 0.17 ROHM : TUMT6 Symbol Limits Unit VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 1 A ICP 2 PC 400 Collector current Power dissipation
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350mV
500mA
85Max.
15Max.
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Untitled
Abstract: No abstract text available
Text: US6X5 Transistors Low frequency amplifier US6X5 6 (1) 0.2 1.7 0~0.1 0.17 1) A collector current is large. 2) VCE(sat) =<180mV At IC = 1A / IB = 50mA ROHM : TUMT6 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage
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180mV
15Max.
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Untitled
Abstract: No abstract text available
Text: US6J2 Transistors Small switching −20V, −1A US6J2 TUMT6 2.0±0.1 0.85MAX 0.77±0.05 (6) (5) (4) (1) (2) (3) 2.1±0.1 1.7±0.1 0.2 0.3 +0.1 −0.05 0.2MAX zExternal dimensions (Unit : mm) 0~0.1 0.2 zFeatures 1) Two Pch MOSFET transistors in a single TUMT6
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Abstract: No abstract text available
Text: US6T7 Transistors Low frequency amplifier US6T7 6 (1) 0.2 1.7 1.3 (2) 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 2.0 (3) (5) 0.85Max. 0.3 !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (4) 0.65 0.65 !External dimensions (Unit : mm)
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-370mV
-50mA
15Max.
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Untitled
Abstract: No abstract text available
Text: US6T7 Transistors Low frequency amplifier US6T7 6 (1) 0.2 1.7 1.3 (2) 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 2.0 (3) (5) 0.85Max. 0.3 !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (4) 0.65 0.65 !External dimensions (Unit : mm)
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-370mV
-50mA
15Max.
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Untitled
Abstract: No abstract text available
Text: RAL035P01 Data Sheet 1.5V Drive Pch MOSFET RAL035P01 Structure Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol : SB Application
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RAL035P01
Pw10s,
R1120A
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TUMT6
Abstract: TSQ03125-US6J2 TSZ22111
Text: TYPE PRODUCTS TUMT6 1.TYPE PAGE US6J2 1/4 US6J2 2.STRUCTURE 3.APPLICATIONS SILICON P-CHANNEL MOS FET SWITCHING 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 IT IS THE SAME RATINGS FOR THE Tr1 AND Tr2. 》 ・・・ -20V DRAIN-SOURCE VOLTAGE VDSS GATE-SOURCE VOLTAGE
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150oC
-55150oC
TSQ03125-US6J2
TSZ2211104
TUMT6
TSQ03125-US6J2
TSZ22111
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Untitled
Abstract: No abstract text available
Text: US6X3 Transistors Low frequency amplifier 12V, 3A US6X3 Dimensions (Unit : mm) 0.2Max. Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) : max. 250mV At lc=1.5A / lB=30mA ROHM : TUMT6 Equivalent circuit Absolute maximum ratings (Ta=25°C)
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250mV
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Abstract: No abstract text available
Text: RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol : XD
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RUL035N02
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Text: RUL035N02 Nch 20V 3.5A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 43mW ID 3.5A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6).
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RUL035N02
R1102A
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Abstract: No abstract text available
Text: RRL035P03 Pch -30V -3.5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 50mW ID -3.5A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6).
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RRL035P03
R1120A
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US6H23
Abstract: transistor h23
Text: US6H23 Transistors Dual digital transistors US6H23 zDimensions Unit : mm TUMT6 0.2Max. zFeatures In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits.
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US6H23
600mA.
US6H23
transistor h23
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Untitled
Abstract: No abstract text available
Text: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04
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