SEC irf630
Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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TT70S7Û
IRF630
IRF631
IRF632
IRF633
IRF633
O-220
SEC irf630
IRF630 SEC
for IRF630
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G296
Abstract: ZVP2120
Text: ZETEX SEMICONDUCTORS ‘Ì S D V ^70570 □ D D S 7 ci3 M • ZETB 95D 0 5 7 9 3 T ' 3 ? ' 2 5 P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability
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ZVP2120
ZVP2120A
ZVP2120B
ZVP2120L
O-220
G296
ZVP2120
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 - APRIL 94_ *— - FEATURES * * 400 Volt VCE0 0.5 Amp continuous current * Ptot=1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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ZTX758
001G35S
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Untitled
Abstract: No abstract text available
Text: BYS 33 Silicon Schottky barrier diodes FEATURES • Forward current 25 A • Reverse voltage 25 V - 45 V • Higher efficiency • Available in different modifications of the package APPLICATIONS • Rectifying in low voltage power supplies • Chopper • Rectifier bridges
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15-20000Hz
TT70S7Û
D0CH102
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