Untitled
Abstract: No abstract text available
Text: NTGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă1.8 V Gate Rating •ăFast Switching •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •ăOptimized for Battery and Load Management Applications in
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NTGS3136P
NTGS3136P/D
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NTGS3136PT1G
Abstract: No abstract text available
Text: NTGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă1.8 V Gate Rating •ăFast Switching •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •ăOptimized for Battery and Load Management Applications in
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NTGS3136P
NTGS3136P/D
NTGS3136PT1G
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Si3430DV-T1
Abstract: Si3430DV
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G
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Si3430DV
Si3430DV-T1
08-Apr-05
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Si3430DV
Abstract: Si3430DV-T1
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G
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Si3430DV
Si3430DV-T1
S-31725--Rev.
18-Aug-03
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Untitled
Abstract: No abstract text available
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G
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Si3430DV
Si3430DV-T1
18-Jul-08
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marking code 46 tsop-6
Abstract: sQ3456ev
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew
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SQ3456EV
AEC-Q101
SQ3456EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code 46 tsop-6
sQ3456ev
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Untitled
Abstract: No abstract text available
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew
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SQ3456EV
AEC-Q101
SQ3456EV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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TVS diode power line Application Note
Abstract: PIN DIAGRAM OF RJ45 to usb dvi schematic sot-23 DIODE marking code D3 TVS diode Application Note MARKING 3B SOT23-6 sot-23-6 marking b on line ups circuit schematic diagram power line network communication rj45 connector to usb port
Text: NUP4201MR6 Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection The NUP4201MR6 transient voltage suppressor is designed to protect high speed data lines from ESD, EFT, and lighting. Features: • Low Capacitance 3 pF Maximum Between I/O Lines
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NUP4201MR6
NUP4201MR6
SC-74,
SC-59
OT-23
NUP4201MR6/D
TVS diode power line Application Note
PIN DIAGRAM OF RJ45 to usb
dvi schematic
sot-23 DIODE marking code D3
TVS diode Application Note
MARKING 3B SOT23-6
sot-23-6 marking b
on line ups circuit schematic diagram
power line network communication
rj45 connector to usb port
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Untitled
Abstract: No abstract text available
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew
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SQ3456EV
AEC-Q101
SQ3456EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR TSOP-6 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS BOND INT 1040 520 000 200 C + N2 FAIL PERCENTAGE 0.00 HAST 4045 408 010 130 C, 85 % RH 0.00
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M2003
08-May-12
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d1415
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH64S72AVJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AVJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.
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MH64S72AVJG-5
208-BIT
864-WORD
72-BIT
MH64S72AVJG
72-bit
85pin
94pin
10pin
95pin
d1415
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67037
Abstract: No abstract text available
Text: SQ3460EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration Single TSOP-6 Top V iew
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SQ3460EV
AEC-Q101
2002/95/EC
SQ3460EV-T1-GE3
18-Jul-08
67037
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Untitled
Abstract: No abstract text available
Text: Si3430DV New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si3430DV
S-01280--Rev.
19-Jun-00
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Untitled
Abstract: No abstract text available
Text: SQ3460EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.026 RDS(on) () at VGS = 2.5 V 0.032 RDS(on) () at VGS = 1.8 V 0.036 ID (A) 8 Configuration Single TSOP-6 Top V iew
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SQ3460EV
2002/95/EC
AEC-Q101
SQ3460EV-T1-GE3
18-Jul-08
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AN7254
Abstract: AN7260 ITF87012SVT MO-193AA SC-95 TB370
Text: ITF87012SVT Data Sheet File Number 4810.2 Features 6A, 20V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET • Ultra Low On-Resistance - rDS ON = 0.035Ω, VGS = 4.5V - rDS(ON) = 0.038Ω, VGS = 4.0V - rDS(ON) = 0.045Ω, VGS = 2.5V Packaging TSOP-6 •
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ITF87012SVT
AN7254
AN7260
ITF87012SVT
MO-193AA
SC-95
TB370
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Untitled
Abstract: No abstract text available
Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V 0.057 RDS(on) (Ω) at VGS = 2.5 V 0.090 ID (A) 3.0 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
2002/95/EC
AEC-Q101
SQ3442EV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
2002/95/EC
AEC-Q101
SQ3442EV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
2002/95/EC
AEC-Q101
SQ3442EV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ3456BEV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 7.8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3456BEV
2002/95/EC
AEC-Q101
SQ3456BEV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3456EV
2002/95/EC
AEC-Q101
SQ3456EV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ3456BEV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 7.8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3456BEV
2002/95/EC
AEC-Q101
SQ3456BEV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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AN7254
Abstract: AN7260 ITF87012SVT SC-95 TB370
Text: ITF87012SVT Data Sheet 6A, 20V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET Packaging TSOP-6 4 Features • Ultra Low On-Resistance - rDS ON = 0.035Ω, VGS = 4.5V - rDS(ON) = 0.038Ω, VGS = 4.0V - rDS(ON) = 0.045Ω, VGS = 2.5V • • • • 1 2
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ITF87012SVT
AN7254
AN7260
ITF87012SVT
SC-95
TB370
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DU20
Abstract: MH1M32BATJ-7
Text: « J - _ o S MH1 M32BATJ-6,-7,-8 FAST PAGE MODE 33554432-BIT 1048576-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION The MH1M32BATJ is 1048576-word x 3 2 -b it dynamic RAM. This consists of eight industry standard 1M x 4 dynamic RAMs in TSOP. The mounting of TSOP on a single in-line package provides
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M32BATJ-6
33554432-BIT
1048576-WORD
32-BIT
MH1M32BATJ
32BATJ-6
32BATJ-7
32BATJ-8
DU20
MH1M32BATJ-7
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TSOP-6 .54
Abstract: AN7254 AN7260 ITF87012SVT SC-95 TB370
Text: ITF87012SVT interrii January. m i Data Sheet PRELIMINARY 6A, 20 V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET File Number 4810.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.035i2, VGs = 4.5V Packaging ‘ rDS(ON) = 0.038i2, VGs = 4.0V TSOP-6
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ITF87012SVT
00e-3
10e-2
00e-2
00e-1
20e-2
00e-2
TSOP-6 .54
AN7254
AN7260
ITF87012SVT
SC-95
TB370
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