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    TSOP SDRAM Search Results

    TSOP SDRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSPT857CNLG Renesas Electronics Corporation 2.5V - 2.6V PLL Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DPAG Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877DBVG Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DBVG8 Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877ANLG8 Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation

    TSOP SDRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM416S8030BN

    Abstract: KM416S8030B
    Text: shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 1999 shrink-TSOP


    Original     		PDF KM416S8030BN 128Mb 16Bit A10/AP KM416S8030BN KM416S8030B

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP KM44S32030AN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 April 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.1 Apr. 1999 shrink-TSOP


    Original     		PDF KM44S32030AN 128Mb KM44S32030AT, 54-sTSOP

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP


    Original     		PDF KM48S16030BN 128Mb A10/AP

    M312L5623MTS

    Abstract: TSOP 173 g M312L5620MTS-CB3 m312l5623mts-cb3
    Text: 2GB TSOP Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC Revision 0.0 February 2004 Revison 0.0 February, 2004 2GB TSOP Registered DIMM Preliminary


    Original     		PDF 184pin 200mil 72-bit M312L5620MTS-CB3/A2/B0 M312L5623MTS-CB3/A2/B0 256Mx4( K4H1G0438M) 128Mx8( K4H1G0838M) M312L5623MTS TSOP 173 g M312L5620MTS-CB3 m312l5623mts-cb3

    Untitled

    Abstract: No abstract text available
    Text: 512MB, 1GB, 2GB TSOP Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.0 December. 2003 Revison 1.0 December, 2003 512MB, 1GB, 2GB TSOP Registered DIMM


    Original     		PDF 512MB, 184pin 512Mb 200mil 72-bit M383L6523BTS-

    PC133 registered reference design

    Abstract: No abstract text available
    Text: Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM Revision History Revision 0.0 July 29. 1999, Preliminary - First generation of datasheet. REV. 0.0 July. 1999 Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM KMM390S6520BN SDRAM DIMM


    Original     		PDF KMM390S6520BN PC133 KMM390S6520BN 64Mx72 32Mx4, 32Mx4 PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: Shrink-TSOP KMM377S6520BN Preliminary 512MB Registered DIMM 512MB Registered DIMM based on 128Mb SDRAM sTSOP2 Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM377S6520BN


    Original     		PDF KMM377S6520BN 512MB 128Mb KMM377S6520BN 64Mx72

    Untitled

    Abstract: No abstract text available
    Text: Shrink-TSOP KMM464S3323BN Preliminary 144pin SDRAM SODIMM 256MB SDRAM SODIMM based on 128Mb SDRAM sTSOP Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM464S3323BN


    Original     		PDF KMM464S3323BN 144pin 256MB 128Mb KMM464S3323BN 32Mx64

    TSOP 86 Package

    Abstract: A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin
    Text: 1999 DRAM Design Guidelines Options Package Width Data Rate Voltage I/O 16Mb 64Mb 128Mb 256Mb Clock MHz 1 54 TSOP x4 SDR 3.3V LVTTL na 16Mx4 32Mx4 64Mx4 PC100/133 2 54 TSOP x8 SDR 3.3V LVTTL na 8Mx8 16Mx8 32Mx8 PC100/133 3 54 TSOP x16 SDR 3.3V LVTTL na 4Mx16 8Mx16 16Mx16


    Original     		PDF 128Mb 256Mb 16Mx4 32Mx4 64Mx4 PC100/133 16Mx8 32Mx8 4Mx16 TSOP 86 Package A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin

    VCCQ15

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX PRELIMINARY* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP


    Original     		PDF 64Mx72 333Mbs W3E64M72S-XSBX VCCQ15

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm


    Original     		PDF 32Mx72 266Mb/s W3E32M72SR-XSBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3DG6435V-AD1 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible The W3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP


    Original     		PDF 256MB 32Mx64 PC100 PC133 W3DG6435V-AD1 W3DG6435V 32Mx8

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF 32Mx72 266MHz W3E32M72S-XBX

    k4h510438b

    Abstract: No abstract text available
    Text: 512MB, 1GB, 2GB TSOP Registered DIMM Pb-Free DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revison 1.2 Oct. 2004


    Original     		PDF 512MB, 184pin 512Mb 200mil 72-bit M383L6523BUS-CA2/B0/A0 k4h510438b

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF 64Mx72 333Mbs* 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M72SR-XSBX ADVANCED* 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm


    Original     		PDF 32Mx72 266Mb/s W3E32M72SR-XSBX

    tsop 66

    Abstract: W3E32M72S-XBX
    Text: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266, 333Mbs 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF W3E32M72S-XBX 32Mx72 333Mbs 333Mbs tsop 66 W3E32M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide


    Original     		PDF 184pin 512Mb 400mil. 184-pin 268max 256Mb

    HYMD564M646C

    Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
    Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered


    Original     		PDF 200pin 512Mb 400mil 200-pin DDR400, DDR333 HYMD564M646C d431 DDR266 DDR266B DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram

    hynix ddr400 sdram 1Gb

    Abstract: DDR200 DDR266 DDR266A DDR266B DDR333 hynix ddr hynix module suffix
    Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide


    Original     		PDF 184pin 512Mb 400mil. 184-pin 256Mb HYMD525G726CSP4M hynix ddr400 sdram 1Gb DDR200 DDR266 DDR266A DDR266B DDR333 hynix ddr hynix module suffix

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF W3E64M72S-XSBX 64Mx72 333Mbs* 512MByte 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		PDF 64Mx72 333Mbs* W3E64M72S-XSBX 333Mbs

    7812

    Abstract: VCCQ15
    Text: White Electronic Designs W3E32M72S-XBX ADVANCED* 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF 32Mx72 266MHz Program40 W3E32M72S-ESB W3E32M72S-XBX 7812 VCCQ15

    Untitled

    Abstract: No abstract text available
    Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered


    Original     		PDF 200pin 512Mb 400mil 200-pin DDR400, 512MB,