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    ADLINK Technology Inc DDR2 667 200P 1GB

    MEMORY FOR ADLINK SYS - Bulk (Alt: DDR2 667 200P 1GB)
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    Avnet Americas DDR2 667 200P 1GB Bulk 13 Weeks 1
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    DDR266 Datasheets Context Search

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    DDR200

    Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
    Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).


    Original     		PDF IBMN612404GT3B IBMN612804GT3B 128Mb DDR266A DDR266B DDR200 06K0566 F39350B DDR200 DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266

    DDR200

    Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
    Text: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).


    Original     		PDF IBMN625404GT3B IBMN625804GT3B 256Mb DDR266A DDR266B DDR200 29L0011 E36997B DDR200 DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B

    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR266 Unbuffered SO-DIMM 128MB With 16Mx16 CL2.5 TS16MSD64V6G Description Placement The TS16MSD64V6G is a 16M x 64bits Double Data Rate SDRAM high-density for DDR266.The TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil


    Original     		PDF 200PIN DDR266 128MB 16Mx16 TS16MSD64V6G TS16MSD64V6G 64bits

    DDR200

    Abstract: DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66
    Text: HYB25D256400/800AT 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz DDR266A DDR200 -7 -8 133 100 143 125 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted


    Original     		PDF HYB25D256400/800AT 256-MBit DDR266A DDR200 DDR200 DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66

    64MX64

    Abstract: DDR266 DDR333 DDR400B PC2100 PC2700 PC3200
    Text: P64M648HHJ - 512MB, P64M648IGJ-512MB, P128M6416HHJ –1GB SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • • • • • • • • • • • • • 184 pin dual in-line memory modules DIMM Fast data transfer rates PC2100, PC2700, PC3200 Utilizes DDR266, DDR333 and DDR400B DDR


    Original     		PDF P64M648HHJ 512MB, P64M648IGJ-512MB, P128M6416HHJ PC2100, PC2700, PC3200 DDR266, DDR333 DDR400B 64MX64 DDR266 PC2100 PC2700 PC3200

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)


    Original     		PDF V58C2256 16Mbit DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)


    Original     		PDF V58C2128 DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V58C2256 804/404/164 SG HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns


    Original     		PDF V58C2256 16Mbit DDR500 DDR440 DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5D 5B 5 6 7 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5 ns 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2256 16Mbit DDR400 DDR333 DDR266

    BA 5053

    Abstract: No abstract text available
    Text: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns 7.5ns Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2256 16Mbit DDR500 DDR440 DDR400 DDR333 DDR266 BA 5053

    V58C2512

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SD*I 512 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 DDR266

    VDDSPD

    Abstract: IC PIN CONFIGURATION OF 74 47
    Text: SL72E5M256M8M-B75EW 256M X 72 Bits 2GB DDR SDRAM 184-Pin 1U Registered DIMM ECC (PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC2100 Compliant (DDR266B 133MHz—7.5ns@CL=2.5) 184-Pin DIMM form factor Auto and self refresh capability


    Original     		PDF SL72E5M256M8M-B75EW 184-Pin PC2100) PC2100 DDR266B 133MHz--7 cycles/64ms JEP-106E VDDSPD IC PIN CONFIGURATION OF 74 47

    100-pin dimm

    Abstract: SU5326485D8F0CU
    Text: SU5326485D8F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5326485D8F0CG 64Mx32 256MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 64Mx8 Based, DDR266A, 30.48mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5326485D8F0CG 64Mx32 (256MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,


    Original     		PDF SU5326485D8F0CU SM5326485D8F0CG SB5326485D8F0CG 64Mx32 256MB) 100-pin 64Mx8 DDR266A, 100-pin dimm SU5326485D8F0CU

    Untitled

    Abstract: No abstract text available
    Text: SU5722885D8DRCU02 October 1, 2004 Ordering Information Part Numbers Description Module Speed SM5722885D8DRCG02 128Mx72 1GB , DDR, 200-pin SO-DIMM, Unbuffered, PLL, ECC, 128Mx8 Based (Stacked - two 64Mx8), DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5


    Original     		PDF SU5722885D8DRCU02 SM5722885D8DRCG02 128Mx72 200-pin 128Mx8 64Mx8) DDR266A,

    1376408-1

    Abstract: No abstract text available
    Text: SU5646485D8NRCU01 September 23, 2004 Ordering Information Part Numbers Description Module Speed SM5646485D8NRCG01 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, PLL, Non-ECC, 64Mx8 Based (Stacked - two 32Mx8), DDR266A, 35.56mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5


    Original     		PDF SU5646485D8NRCU01 SM5646485D8NRCG01 64Mx64 512MB) 200-pin 64Mx8 32Mx8) DDR266A, 32Mx64 256MB) 1376408-1

    G5723

    Abstract: No abstract text available
    Text: SU5726485D8D6CU July 19, 2006 Ordering Information Part Numbers Description Module Speed SM5726485D8D6CG 64Mx72 512MB , DDR, 184-pin DIMM, Unbuffered, ECC, 32Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SG5726485D8D6CG 64Mx72 (512MB), DDR, 184-pin DIMM, Unbuffered, ECC,


    Original     		PDF SU5726485D8D6CU SM5726485D8D6CG SG5726485D8D6CG 64Mx72 512MB) 184-pin 32Mx8 DDR266A, G5723

    Untitled

    Abstract: No abstract text available
    Text: SU5726485D8DZCU02 October 5, 2004 Ordering Information Part Numbers Description Module Speed SM5726485D8DZCG02 64Mx72 512MB , DDR, 200-pin SODIMM, Unbuffered, PLL, 64Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5726485D8DZCG02


    Original     		PDF SU5726485D8DZCU02 SM5726485D8DZCG02 SB5726485D8DZCG02 64Mx72 512MB) 200-pin 64Mx8 DDR266A,

    Untitled

    Abstract: No abstract text available
    Text: SU5725645DHE8CU02 November 9, 2004 Ordering Information Part Numbers Description Module Speed SM5725645DHE8CG02 256Mx72 2GB , DDR, 184-pin DIMM, Registered, 256Mx4 Based (Stacked - two 128Mx4), ECC, DDR266A, 30.48mm, 22Ω DQ termination, Low Power. PC2100 @ CL 2.0, 2.5


    Original     		PDF SU5725645DHE8CU02 SM5725645DHE8CG02 256Mx72 184-pin 256Mx4 128Mx4) DDR266A,

    Untitled

    Abstract: No abstract text available
    Text: SM6472RDDR301 September 30, 2005 Ordering Information Part Numbers Description Module Speed SM6472RDDR301 64Mx72 512MB , DDR, 184-pin DIMM, Registered, ECC, 32Mx8 Based, DDR266A, 30.48mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]


    Original     		PDF SM6472RDDR301 SM6472RDDR301 64Mx72 512MB) 184-pin 32Mx8 DDR266A, PC2100

    Untitled

    Abstract: No abstract text available
    Text: SU5721685D4D0CU July 6, 2006 Ordering Information Part Numbers Description Module Speed SM5721685D4D0CG 16Mx72 128MB , DDR, 184-pin DIMM, Unbuffered, ECC, 16Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SG5721685D4D0CG 16Mx72 (128MB), DDR, 184-pin DIMM, Unbuffered, ECC,


    Original     		PDF SU5721685D4D0CU SM5721685D4D0CG SG5721685D4D0CG 16Mx72 128MB) 184-pin 16Mx8 DDR266A,

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG72255S-D3 -JD3 -AJD3 PRELIMINARY* 2GB-256Mx72 DDR SDRAM REGISTERED ECC FEATURES DESCRIPTION n Double-data-rate architecture n DDR200, DDR266 and DDR333; The W3EG72255S is a 256Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM


    Original     		PDF W3EG72255S-D3 2GB-256Mx72 DDR200, DDR266 DDR333; W3EG72255S 256Mx72 512Mb 256Mx4 128Mx72

    256mb ddr333 200 pin

    Abstract: DDR266 DDR333 WV3EG6434S-BD4
    Text: White Electronic Designs WV3EG6434S-BD4 ADVANCED* 256MB – 32Mx64 DDR SDRAM UNBUFFERED, w/PLL FEATURES DESCRIPTION DDR266 and DDR333 The WV3EG6434S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight


    Original     		PDF WV3EG6434S-BD4 256MB 32Mx64 DDR266 DDR333 WV3EG6434S 256Mb 32Mx8 256mb ddr333 200 pin DDR333 WV3EG6434S-BD4

    NT256D64S8HA0G

    Abstract: NT256D64S8HA0G-7K PC2100
    Text: NT256D64S8HA0G 256MB : 32M x 64 PC2100 / PC1600 Unbuffered DIMM 184pin Two Bank Unbuffered DDR SDRAM MODULE Based on DDR266/200 16Mx8 SDRAM Features • 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module • DRAM DLL aligns DQ and DQS transitions with clock transitions.


    Original     		PDF NT256D64S8HA0G 256MB PC2100 PC1600 184pin DDR266/200 16Mx8 184-Pin 32Mx64 PC1600 NT256D64S8HA0G NT256D64S8HA0G-7K