Untitled
Abstract: No abstract text available
Text: TSM3454 30V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 30 Features ID (A) 60 @ VGS = 10V 4.5 85 @ VGS = 4.5V 3.8 Block Diagram ● Advance Trench Process Technology ●
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TSM3454
OT-26
TSM3454CX6
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Untitled
Abstract: No abstract text available
Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channel MOSFET bl RoHS CO M PLIANCE SOT-26 65 4 PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source V ds {V 30 1 23 Features RDS on)(m£2) Id (A) 60 @ VGS= 10V 4.5 85 @ Vcs= 4.5V 3.6
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OCR Scan
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TSM3454
OT-26
TSM3454CX6
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BL SOT26
Abstract: No abstract text available
Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channei MOSFET b RoHS COMPLIANCE SOT-26 654 PRODUCT SU MMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Vos {V) Id RDS on)(m£2) (A) 60 @ VGS= 10V 4.5 85 @ Vos = 4 .5 V 3.6 30 1 23 Features
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TSM3454
OT-26
TSM3454CX6
BL SOT26
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TSM3454CX6
Abstract: TSM3454 MARKING SO SOT26
Text: E TAIW AN pb RoHS TSM3454 S E M IC O N D U C T O R 30V N-Channei MOSFET C O M P L IA N C E SOT-26 854 PRODUCT SU M M AR Y Pin Definition: 1. D ra in 2. D ra in 6. D ra in 5. D ra in 3. Gate 4. Source V ds {V) RDS(on)(m£2) I d (A) 60 @ VGS= 10V 4.5 85 @ V cs= 4.5V
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OCR Scan
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TSM3454
OT-26
TSM3454CX6
OT-26
TSM3454
MARKING SO SOT26
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