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    Taiwan Semiconductor TSM2306CX RFG

    MOSFETs 30V, 3.5A, Single N-Channel Power MOSFET
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    Taiwan Semiconductor TSM2306CX

    MOSFETs 30V N channel MOSFET
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    TSM2306 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM2306CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 30V 3.5A SOT23 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX

    TSM2306

    Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX TSM2306 IDA57 n-channel mosfet transistor n-channel mosfet SOT-23

    Untitled

    Abstract: No abstract text available
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS = 10V 3.5 94 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX