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    TRW PA-1 TRANSISTOR Search Results

    TRW PA-1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRW PA-1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 835

    Abstract: HBT transistor TRW mmic RF2152 TA0032 trw rf transistor
    Text: TA0032  TA0032 RF2152: A 3V HBT Power Amplifier for CDMA/AMPS Handsets        Figure 1: PSSOP-16 Package Outline A high power, high efficiency, low cost power amplifier has been developed utilizing commercial gallium arsenide GaAs heterojunction bipolar transistor (HBT)


    Original     		PDF TA0032 RF2152: PSSOP-16 RF2152 28dBm 27dBm 10dBm transistor 835 HBT transistor TRW mmic TA0032 trw rf transistor

    RF2131

    Abstract: TA0013 trw rf transistor HBT transistor
    Text: TA0013   TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier        RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on revolutionary HBT Heterojunction Bipolar Transistor technology.


    Original     		PDF TA0013 RF2131: 824MHz 849MHz 420mA 16-lead RF2131 Bm/30kHz, TA0013 trw rf transistor HBT transistor

    RF2108

    Abstract: cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011
    Text: TA0011  TA0011 RF2108: A Linear, High Efficiency, HBT, CDMA Power Amplifier         RF Micro Devices introduces a new linear power amplifier for CDMA applications based on their HBT Heterojunction Bipolar Transistor technology. This power


    Original     		PDF TA0011 RF2108: 29dBm 16-lead RF2108 27dBm cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
    Text: TA0012   TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier         efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key


    Original     		PDF TA0012 RF2123: RF2123 16-lead trw RF POWER TRANSISTOR trw rf transistor TA0012 HBT transistor gsm cellular power amplifier trw rf transistors

    trw rf transistor

    Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
    Text: TA0012   TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier         efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key


    Original     		PDF TA0012 RF2123: RF2123 16-lead trw rf transistor HBT transistor cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR

    vhf antenna mtbf

    Abstract: RF2115 w54* transistor RF2155 TA0014 w54 transistor trw rf transistor trw RF POWER TRANSISTOR
    Text: TA0014  TA0014 Amp RF2155: High Efficiency HBT Low Voltage Programmable Gain Power         RF Micro Devices introduces a new power amplifier with digital gain control for low voltage applications. The power amplifier operates up to 1GHz and delivers


    Original     		PDF TA0014 RF2155: 900MHz 400MHz RF2155 vhf antenna mtbf RF2115 w54* transistor TA0014 w54 transistor trw rf transistor trw RF POWER TRANSISTOR

    w54 transistor

    Abstract: TA0014 vhf antenna mtbf RF2155 trw rf transistor w54* transistor
    Text: TA0014  TA0014 Amp RF2155: High Efficiency HBT Low Voltage Programmable Gain Power         RF Micro Devices introduces a new power amplifier with digital gain control for low voltage applications. The power amplifier operates up to 1GHz and delivers


    Original     		PDF TA0014 RF2155: 900MHz 400MHz w54 transistor TA0014 vhf antenna mtbf RF2155 trw rf transistor w54* transistor

    trw RF POWER TRANSISTOR

    Abstract: C33825 trw rf transistor trw 131* RF POWER TRANSISTOR TRW mmic HBT transistor RF2152 TA0032 POUT315 3.5V HBT MMIC Amplifier
    Text: TA0032  TA0032 RF2152: A 3V HBT Power Amplifier for CDMA/AMPS Handsets           The RF2152 is the latest addition to a family of power amplifiers introduced by RF Micro Devices RFMD utilizing GaAs HBT technology. This commercially proven


    Original     		PDF TA0032 RF2152: RF2152 trw RF POWER TRANSISTOR C33825 trw rf transistor trw 131* RF POWER TRANSISTOR TRW mmic HBT transistor TA0032 POUT315 3.5V HBT MMIC Amplifier

    trw rf transistor

    Abstract: RF2131 TA0013 trw RF POWER TRANSISTOR
    Text: TA0013   TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier         operated applications, the power-added or total efficiency is extremely important. Sixty percent total efficiency for a two-stage, 25dB gain AMPS/ETACS


    Original     		PDF TA0013 RF2131: RF2131 Bm/30kHz, trw rf transistor TA0013 trw RF POWER TRANSISTOR

    led 7 segment anode TIL 702

    Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
    Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9


    OCR Scan     		PDF 10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150

    CA2850R

    Abstract: trw RF POWER TRANSISTOR ELECTRONIC BALLAST 236 trw rf transistor trw rf hybrid amp trw hybrid 100MHZ
    Text: JL T R ü ELEK CMPNT/ R F DË| 0025054 GOOBTIO 4 | RF Devices Division TRW Electronic Components Group T CA2850R - " 7 * - 0 9 - 0 1 CA2850RThin Film RF Linear Hybrid Amplifier All Gold Monometallic) Metallization System Featuring Gold Transistor Die with Diffused Emitter


    OCR Scan     		PDF GOOHI10 CA2850R CA2850R 40dBm CA28S0R -32dB trw RF POWER TRANSISTOR ELECTRONIC BALLAST 236 trw rf transistor trw rf hybrid amp trw hybrid 100MHZ

    OPI3252

    Abstract: diodo led 0PI3152 0PI3252 OPI3152
    Text: OPTEK TECHNOLOGY INC ObE D | h71flSÛQ 0G002S0 3 | Optoelectronics Division TRW Electronic Components Group Product Bulletin 5224 January 1985 1987 Cost Saver Product! Call TRW for more information! jf g Ê \W T Optically Coupled Isolators Types OPI3152, OPI3252


    OCR Scan     		PDF 0PI3152, 0PI3252 0PI3152. 215J49 OPI3252 diodo led 0PI3152 0PI3252 OPI3152

    GN135

    Abstract: 5252 F "integrated circuit" c 5252 transistor high speed small signal transistor
    Text: OPTEK TECHNOLOGY INC ObE D g ^7=16580OQOOSfiD Optoaloctronic* Division TRW Electronic Components Group 1987 Cost Saver Product! Call TRW for more information! Product Bulletin 5252 January 1985 High Speed Optocouplers Types 6N135, 6N136, QPI2502 Features Absolute Maxim um Ratin gs No derating required up to 70°C


    OCR Scan     		PDF E58730 7500B GN135 5252 F "integrated circuit" c 5252 transistor high speed small signal transistor

    TV AMPLIFER TRANSISTOR

    Abstract: 74ls371 TDC1041 TDC1038 TDC4611 z144 TDC1012 TDC1048 TDC1112 4611B
    Text: TDC4611 r# ? w Adjustable Voltage Reference with Operational Amplifier Features The TDC4611 comprises a precision adjustable voltage reference and a single general purpose operational amplifier on the same monolithic integrated circuit. This combination of circuit functions is ideally suited for


    OCR Scan     		PDF TDC4611 TDC4611 4611MEC TV AMPLIFER TRANSISTOR 74ls371 TDC1041 TDC1038 z144 TDC1012 TDC1048 TDC1112 4611B

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: THC4231 TR Yw W ide Bandwidth Fast Settling Operational Amplifier 165M Hz Closed Loop Bandwidth The THC4231 is a wide bandwidth fast settling opera­ • 1mV Input Offset Voltage, 10^V/°C Drift tional amplifier designed specifically for high-speed, lowgain applications. The op amp design is based on current


    OCR Scan     		PDF THC4231 THC4231 95ecification

    Untitled

    Abstract: No abstract text available
    Text: TR Y w THC4940 Track and Hold Amplifier 150MHz, Small Signal Bandwidth The TR W T H C 4940 is a fast sam pling, w id e -b a n d track and hold a m plifier th a t offers ultra-fast sw itching p e rfo r­ m ance plus an unprecedented array of supporting specifi­


    OCR Scan     		PDF THC4940 THC4940X2A 150MHz,

    4614b

    Abstract: 74ls477 1452a 1467A 4614B TRANSISTOR
    Text: TDC4614 « m f f m m u i i r Adjustable Voltage Reference with Four Operational Amplifiers The TDC4614 com prises a precision adjustable voltage Applications reference and four general purpose operational am plifiers on the sam e m onolithic integrated circuit. This


    OCR Scan     		PDF TDC4614 TDC4614 4614b 74ls477 1452a 1467A 4614B TRANSISTOR

    nec 424800

    Abstract: No abstract text available
    Text: bMB?S25 00410^0 EC 2^7 A TA S H E ET 3 MOS INTEGRATED CIRCUIT /¿PD424800-L 4M B IT D Y N A M IC RAM F A S T PA G E M ODE D ESCRIPTIO N The N E C juPD4 2 48 00 -L is a 524288-word by 8 bits dynam ic CMOS RAM w ith optional fast page mode. CMOS sense am plifier, peripheral circuits and 1 transistor memory cell technique realize high speed access, cycle time


    OCR Scan     		PDF PD424800-L 524288-word /uPD424800-L 28-pin PD424800V nec 424800

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: juA774BQB Operational Amplifier FA IRCHILD A Schlumberger Company MIL-STD-883 July 1986— Rev 1s Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 14-Lead DIP Top View This monolithic JFET input operational amplifier incorpo­


    OCR Scan     		PDF juA774BQB MIL-STD-883 14-Lead MA774BDMQB Mil-M-38510,

    OPB814

    Abstract: OPB813S10 OPB813 c1969 transistor MST712 c1964 C1967 C1969 transistor C1905 OPB815
    Text: QUALITY TECHNOLOGIES SLOTTED TRANSISTOR OPTOSWITCHES MST6XXX MST8XXX MST7XXX MST9XXX DESCRIPTION PACKAGE TYPES E TYPE 6 E D D TYPE 8 E D The MSTXXXX series of optoswitches is designed to allow the user maximum flexibility in his application. Each switch concsists of an infra-red emitting diode


    OCR Scan     		PDF C1990 OPB814 OPB813S10 OPB813 c1969 transistor MST712 c1964 C1967 C1969 transistor C1905 OPB815

    GP131

    Abstract: 13F-1 MRW2015
    Text: MOTOROLA SC XSTRS/R F MbE D • b 3 b 7 2 5 4 O O lS O fll T-: MOTOROLA ■ SEMICONDUCTOR 7 ■ flOTb 0 1 a TECHNICAL DATA MRW2000 Series The RF Line M icrow ave Pow er Transisto rs 5.2 TO 9 dB 1-2.3 GHz 1 TO 20 WATTS MICROWAVE POWER TRANSISTORS . . . designed p rim arily fo r large-signal output and d rive r am p lifier stag es in th e 1 to


    OCR Scan     		PDF MRW2000 24GHz GP131 13F-1 MRW2015

    MAX250CPD

    Abstract: Optocouplers for rs232 ttl 67114760 MINI-MAGNETICS MM2757 MAX250 MOSFET A018 MM2757 MM2758 motorola 6n136 67117970
    Text: y n y ix iy i/ i +5V P ow ered Iso la te d RS-232 D rivers/R eceivers The MAX250 and MAX251 chip set form the heart of a complete, electrically isolated, RS-232 dual transmit­ ter/receiver. By combining many functions on two chips, the cost and complexity required for an isolated digital


    OCR Scan     		PDF RS-232 MAX250 MAX251 MAX250CPD Optocouplers for rs232 ttl 67114760 MINI-MAGNETICS MM2757 MOSFET A018 MM2757 MM2758 motorola 6n136 67117970