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    TRANSISTOR SMD MARKING AG Search Results

    TRANSISTOR SMD MARKING AG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD MARKING AG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "marking E1"

    Abstract: BFS17 BFS17R sot 23 transistor 70.2
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2

    Q67042-S4057

    Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
    Text: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking


    Original     		PDF SPP100N03S2-03 SPB100N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4058 PN0303 P-TO263-3-2 Q67042-S4057 Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303

    "marking E1"

    Abstract: BFS17R BFS17 d 1556 transistor
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 16-Oct-97 "marking E1" d 1556 transistor

    telefunken ta 750

    Abstract: S416T smd marking l5 MARKING GA smd transistor marking L5 smd transistor marking ga transistor smd 49 transistor smd marking cu 23marking
    Text: S 416 T TELEFUNKEN Semiconductors Silicon PNP planar RF transistor Applications Oscillator in VHF tuner. Features D Especially suitable for VHF oscillators D SMD package Dimensions in mm Case 23 A 3 DIN 41 869 SOT 23 Marking: GA Weight max. 0.01 g Absolute Maximum Ratings


    Original     		PDF D-74025 telefunken ta 750 S416T smd marking l5 MARKING GA smd transistor marking L5 smd transistor marking ga transistor smd 49 transistor smd marking cu 23marking

    04N03LA

    Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
    Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA 04n03l smd marking D50 P-TO251-3-1 P-TO252-3-11 smd diode marking c3

    04N03LA

    Abstract: IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11
    Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA P-TO251-3-1 P-TO252-3-11

    Untitled

    Abstract: No abstract text available
    Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23

    BFS17

    Abstract: transistor BFs 18 BFS17R marking E1
    Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		PDF BFS17 BFS17R D-74025 transistor BFs 18 marking E1

    smd zener diode 5v

    Abstract: Zener diode smd marking 22 Zener diode smd marking 36 smd transistor marking 36 transistor smd P.D 1 zener smd marking GI TRANSISTOR SMD 04 k 1 SMD Transistor diode smd marking 22 SMD TRANSISTOR High Voltage Transistor
    Text: Transistors SMD Type Digital Transistors DTDG23YP Features NPN Epitaxial Planar Silicon Transistor with built-in resistors and zener diode . High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load).


    Original     		PDF DTDG23YP 40x40x0 100mA 500mA/5mA 500mA 30MHz smd zener diode 5v Zener diode smd marking 22 Zener diode smd marking 36 smd transistor marking 36 transistor smd P.D 1 zener smd marking GI TRANSISTOR SMD 04 k 1 SMD Transistor diode smd marking 22 SMD TRANSISTOR High Voltage Transistor

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification DTDG23YP Features NPN Epitaxial Planar Silicon Transistor with built-in resistors and zener diode . High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load). Absolute Maximum Ratings Ta = 25


    Original     		PDF DTDG23YP 40x40x0 500mA 30MHz

    SMD transistor MARKING CODE 43

    Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;


    Original     		PDF PDTC114E resistor-equipPDTC114EE PDTC114EU PDTC114EEF SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D

    smd transistor w1a

    Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
    Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the


    Original     		PDF CX-49G, CX-40F HC-49/U HC-49U-S 31-Dec-04 CX-49L smd transistor w1a smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor

    Zener diode smd marking 27

    Abstract: 2A 5v ZENER DIODE smd zener diode 5v ZENER DIODE 2A SMD TRANSISTOR MARKING 2A 2SD2167
    Text: Transistors SMD Type Power Transistor 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W on 40 40 0.7mm ceramic board . Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SD2167 30MHz Zener diode smd marking 27 2A 5v ZENER DIODE smd zener diode 5v ZENER DIODE 2A SMD TRANSISTOR MARKING 2A 2SD2167

    TRANSISTOR SMD MARKING CODE LF

    Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
    Text: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)


    Original     		PDF 2PA1774 OT416 SC-75) 2PC4617. sym013 2PA1774Q 2PA1774R 2PA1774S SC-75 OT416 TRANSISTOR SMD MARKING CODE LF smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1

    TRANSISTOR SMD MARKING CODE 3d

    Abstract: MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f smd transistor t4 SMD TRANSISTOR A1 SOT23 TRANSISTOR SMD MARKING CODE A1 smd marking code 3D smd marking rs
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of 2002 Feb 04 2003 Apr 09 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858


    Original     		PDF M3D088 BC856; BC857; BC858 BC846, BC847 BC848. BC856 BC856A BC856B TRANSISTOR SMD MARKING CODE 3d MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f smd transistor t4 SMD TRANSISTOR A1 SOT23 TRANSISTOR SMD MARKING CODE A1 smd marking code 3D smd marking rs

    Untitled

    Abstract: No abstract text available
    Text: TLV4906K Value Optimized Hall Effect Switch for Industrial and Consumer Applications Datasheet Rev. 1.1, 2010-08-02 Sense and Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF TLV4906K AEA03244 TLV4906K GPS09473 PG-SC59-3-5 PG-SC59-3-5

    TLV4906K

    Abstract: No abstract text available
    Text: TLV4906K Value Optimized Hall Effect Switch for Industrial and Consumer Applications Datasheet Rev. 1.1, 2010-08-02 Sense and Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF TLV4906K AEA03244 TLV4906K GPS09473 PG-SC59-3-5 PG-SC59-3-5

    2SC3134

    Abstract: VEBO-15V
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3134 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Wide ASO and high durability against breakdown. 0.55 High VEBO. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original     		PDF 2SC3134 OT-23 2SC3134 VEBO-15V

    transistor 2xw

    Abstract: transistor table RF Bipolar Transistor smd rf transistor marking
    Text: T ar ge t D at a S he et , R e v . 1. 1 , D ec e m be r 2 00 8 BGB707L7ESD T ar ge t D at a S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2008-12-10 Published by Infineon Technologies AG,


    Original     		PDF BGB707L7ESD transistor 2xw transistor table RF Bipolar Transistor smd rf transistor marking

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    Untitled

    Abstract: No abstract text available
    Text: TLE4916-1K Low Power Automotive Hall Switch Datasheet Rev.1.0, 2010-02-23 Sense & Control Edition 2010-02-23 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF TLE4916-1K

    smd code Hall

    Abstract: smd hall TLE4916-1K TRANSISTOR SMD MARKING CODE 1K GPS09473 SC59 hall chip smd SP000649954 TRANSISTOR SMD CODE PACKAGE SC59 PG-SC59-3-4
    Text: TLE4916-1K Low Power Automotive Hall Switch Datasheet Rev.1.0, 2010-02-23 Sense & Control Edition 2010-02-23 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF TLE4916-1K smd code Hall smd hall TLE4916-1K TRANSISTOR SMD MARKING CODE 1K GPS09473 SC59 hall chip smd SP000649954 TRANSISTOR SMD CODE PACKAGE SC59 PG-SC59-3-4

    st smd IC marking code

    Abstract: 2N5154ESYHRT
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


    Original     		PDF 2N5154HR O-257 2N5154HR O-257 DocID15387 st smd IC marking code 2N5154ESYHRT

    MARKING SMD transistor 12X

    Abstract: smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U
    Text: • ^53^31 aG23T77 5TT « A P X N AMER P H I L I P S / D I S C R E T E BST120 b7E T> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan     		PDF BST120 7Z94272 7Z21S40 MARKING SMD transistor 12X smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U