Untitled
Abstract: No abstract text available
Text: IC SMD Type Product specification 2SA1900 Features Low saturation voltage, typically VCE sat = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage
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2SA1900
500mA
40X40X0
-500mA/-50mA
100MHz
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2SA1900
Abstract: 40X40X0
Text: Transistors IC SMD Type Medium power transistor 2SA1900 Features Low saturation voltage, typically VCE sat = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage
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2SA1900
500mA
40X40X0
-500mA/-50mA
100MHz
2SA1900
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Untitled
Abstract: No abstract text available
Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)
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2SC5824
SC-62)
OT-89>
2SA2071
A/200mA)
R1102A
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2SCR514p
Abstract: No abstract text available
Text: 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A MPT3 Base Collector Emitter 2SAR514P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low VCE(sat)
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2SAR514P
SC-62)
OT-89>
2SCR514P
-300mA/
-15mA)
R1102A
2SCR514p
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Untitled
Abstract: No abstract text available
Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)
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2SC5824
SC-62)
OT-89>
2SA2071
A/200mA)
R1102A
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2SCR514R
Abstract: No abstract text available
Text: 2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A TSMT3 Collector Base Emitter 2SAR514R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)
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2SAR514R
SC-96)
2SCR514R
-300mA/
-15mA)
R1102A
2SCR514R
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Untitled
Abstract: No abstract text available
Text: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825
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2SA2701
2SA2702
2SA2071
SC-62)
OT-89>
2SC5824
2SC5825
-500mV
2SA2072
SC-63)
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RS1e240
Abstract: No abstract text available
Text: RS1E240GN Nch 30V 24A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 3.3mW RDS(on) at 4.5V (Max.) 4.4mW ID 24A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source
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RS1E240GN
R1102A
RS1e240
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FCX718TA
Abstract: FCX718
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX718 ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 6A Peak Pulse Current Excellent HFE Characteristics up to 6Amps Extremely Low Saturation Voltage E.g. 16mv Typ. Extremely Low Equivalent On-resistance;
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FCX718
100ms
522-FCX718TA
FCX718TA
FCX718TA
FCX718
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2SCR514R
Abstract: No abstract text available
Text: 2SCR514R Datasheet NPN 0.7A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 0.7A TSMT3 Collector Base Emitter 2SCR514R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR514R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)
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2SCR514R
SC-96)
2SAR514R
300mA/15mA)
R1102A
2SCR514R
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Untitled
Abstract: No abstract text available
Text: 2SCR553P Datasheet NPN 2.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 2.0A MPT3 Base Collector Emitter 2SCR553P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR553P 3) Low VCE(sat) VCE(sat)=0.35V(Max.)
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2SCR553P
SC-62)
OT-89>
2SAR553P
700mA/35mA)
R1102A
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Untitled
Abstract: No abstract text available
Text: Midium Power Transistors 80V / 2.5A 2SCR544R Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) TSMT3 1.0MAX Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6
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2SCR544R
R1120A
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smd transistor marking br
Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Text: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5
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2SD1664
2SB1132
40x40x0
500mA
-50mA
100MHz
smd transistor marking br
smd transistor marking da
smd marking DA
transistor SMD DA
MARKING SMD TRANSISTOR P
SMD BR 32
DA SMD
transistor smd marking
smd transistor marking 1 da
transistor 2SD1664
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2SC5053
Abstract: No abstract text available
Text: Transistors SMD Type Medium Power Transistor 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage
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2SC5053
500mA
100ms,
40X40X0
-500mA
-50mA
100MHz
2SC5053
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current
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2SB1132
2SD1664
100ms
40x40x0
-50uA
30MHz
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2SA2071
Abstract: 2SC5824 T100
Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.
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2SA2071
200mV
2SC5824
R1120A
2SA2071
2SC5824
T100
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2SD1733
Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
Text: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V
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2SD1898
2SD1733
2SD1768S
2SD1863
2SD1898
2SB1260
2SB1181
2SB1241
2SD1863
SC-72
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10003 NPN
Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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STD1664
STB1132
OT-89
KST-8004-001
500mA,
10003 NPN
STD1664
STB1132
a2 sot-89
KST-8004-001
TRANSISTOR 10003
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STB1132
Abstract: STD1664
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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STB1132
STD1664
OT-89
KST-8001-002
-500mA,
-50mA
-50mA,
30MHz
STB1132
STD1664
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2SC5053
Abstract: 2SA1900 T100 2SA1900Q oc pnp sc62
Text: bÿ 2SA1900 £ /Transistors Q Q Q x k f $ * ì / 7 J i ' 7 \ s - J ' ì & pnp v ' ; = i > h 7 > v * £ 9 C A 4 Epitaxial Planar PNP Silicon Transistor /Medium Power Amp. * W fN'üEl./Dim ensions Unit : mm 1) Pc=2W T'&Z (40X40X0.7mm Hz 2) L o w V c E ( s a t ) = — 0 1 5 V (T yp.)
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2SA1900
A19001e'
40X40X0
-500mA/-50mA)
2SC5053
2SC50S3.
X40X0
-100m
2SC5053
2SA1900
T100
2SA1900Q
oc pnp sc62
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Untitled
Abstract: No abstract text available
Text: DC AXIAL FAN 40x40x07mm US •; M o de N u m b e r V o lta g e VDC O p.V o lta ge (VDC) FD4007B05W 5-71 5 FD4007B05W 7-71 5 FD4007B12W 5-71 12 C€ .W FD4007B12W 7-71 SS tw 12 SF A irF lo w (CFM) StaticPres. (m m -H 20) Noise . (dBA) 4 .0 -5 5 5.50 2.50
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40x40x07mm
FD4007B05W
FD4007B12W
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2SC5053
Abstract: W0401
Text: h 2SC5053 /'Transistors i~M NPN v U = 3 > h -7 Epitaxial Planar NPN Silicon Transistor O C / * C f C O » w w O w ^ O /Medium Power Amp. • 1 $ £ 13/Dimensions Unit : mm) 1) P c= 2 W T'£>3 (40X40X0.7mm iz 7 5 7 ? & m m )o 2) Low Vce ( s a t) = 0 .1 2V
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2SC5053
13/Dimensions
40X40X0
500mA/50mA)
2SA1900
2SA1900.
SC-62
2SC5053
W0401
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Untitled
Abstract: No abstract text available
Text: h ~7 > V 7 s $ / T ransistors 2SB1188 2SB1188 Epitaxial Planar PNP Silicon Transistor 4 ,^ ^JiSlliffl/Medium Power Amp. • • W fir l'jill/ D im e n s io n s U n it: mm W ft 1) U U ? * S * P c = 2W T'& * o (40X40X0.7mm-fe 2) VcE(sat) 1. 6 ± 0 . I VcE(sat)=-0.2V(Typ.)
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2SB1188
40X40X0
2SD1766.
SC-62
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Untitled
Abstract: No abstract text available
Text: 2SD2391 h 7 > '/ ^ £ /Transistors 2SD2391 NPN * > U = l > b 7 > ' s Z * Epitaxial Planar NPN Silicon Transistor 4,^ l ^ i i |ÜÆ /Medium Power Amp. 1^ fi5\fîÈ0 /Dimensions Unit : mm 1) V c E O = 6 0 V T * 5 o 2) 3 U ' ? $ 1 * £ P c = 2 W T '* - 5 (40X40X0.7mm -fe 7 5
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2SD2391
40X40X0
2SB1561
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