TRANSISTOR SIEMENS SS Search Results

TRANSISTOR SIEMENS SS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR SIEMENS SS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUP101 Abstract: bup transistor A 671 transistor Text: • 823SbD5 QDSlBb^ 2 O S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF 47E I> r-3 3 -13 BUP101 SIRET Siemens Ring Emitter Transistor VGe = 1000 V /0 =15 A • N channel • Breakdown-proof • Package: TO-218 AA TO P-3 1) Type Ordering code B U P 101 C 6 7 060-A 1000-A 2	OCR Scan	823SbD5 QDS13bci BUP101 O-218 C67060-A1000-A2 01234s6789a10 r-33-/3 BUP101 bup transistor A 671 transistor	PDF
2sc 103 transistor Abstract: transistor BD 430 Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in	OCR Scan	Q62702-D1069 -T-33-OS fl23SbQS BD429 2sc 103 transistor transistor BD 430	PDF
BD429 Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in	OCR Scan	fl23Sfc Q62702-D1069 BD429 fnb33 D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor	PDF
S100 NPN Transistor Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503 Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF	OCR Scan	fl23SbOS 00Q4507 Q62702-F574 S100 NPN Transistor BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503	PDF
bfr 547 Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39 Text: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise	OCR Scan	fl235bOS bfr 547 Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39	PDF
Transistor BFR 96 Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A Text: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar	OCR Scan	fl235bD QQQMb70 BFR34A 2N6620. Q62702-F346-S1 Q68000-A4668 0Q0Mb73 Transistor BFR 96 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99	PDF
3004x Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79 Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for	OCR Scan	fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79	PDF
Transistor BFT 99 Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44 Text: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF	OCR Scan	Q0G4713 Q62702-F513 051i0 Transistor BFT 99 BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44	PDF
BF324 Abstract: oms 450 Q62702-F311 S420 Text: 25C » • ô53SbQS GGQ4H73 0 WÊZIZG [; PNP Silicon RF Transistor SIEMENS AKTIENÛESELLSCHAF '3 T -ïl-tl BF 324 D.- fo r large-signal V H F stag es BF 3 2 4 is an epitaxial PNP silicon planar transistor in TO 9 2 plastic package TO A 3	OCR Scan	Q62702-F311 140mS BF324 oms 450 Q62702-F311 S420	PDF
TRANSISTOR D 570 Abstract: BF 145 transistor transistor bf Text: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled	OCR Scan	23SLQS 0GQ4S23 TRANSISTOR D 570 BF 145 transistor transistor bf	PDF
DIODE JS.9 smd Abstract: No abstract text available Text: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-T0220-3-1 03N60S5 Q67040-S4184 P-T0263-3-2 DIODE JS.9 smd	PDF
Untitled Abstract: No abstract text available Text: SIEMENS SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-T0251 04N60S5 Q67040-S4228 P-T0252	PDF
03N60S5 Abstract: No abstract text available Text: SIEMENS SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 P-T0251 03N60S5 Q67040-S4227 P-T0252 03N60S5	PDF
02N60S5 Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5 Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5	PDF

FAG 32 diode Abstract: No abstract text available Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-T0220-3-1 04N60S5 Q67040-S4200 P-T0263-3-2 FAG 32 diode	PDF
Transistor BFX 90 Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general	OCR Scan	23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor	PDF
ABE 422 Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721 Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high	OCR Scan	pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package • Built in bias resistor (R i=4 .7 kfl) Type Ordering Code Pin Configuration	OCR Scan	T-363 fl235b05 H35b05	PDF
Transistor C G 774 6-1 Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1 Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods	OCR Scan	A23StiGS dG04hlt. Q62702-F527 235b05 000Mb22 BFQ28 Transistor C G 774 6-1 C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1	PDF
29Z3 Abstract: Transistor CODE FR m7am Text: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided	OCR Scan	BCY67 BCY67 29Z3 Transistor CODE FR m7am	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R-\|=22kO, R2=22kfl) C1 Tape loading orientation	OCR Scan	22kfl) Q62702-C2375 OT-363	PDF
20N60S5 Abstract: No abstract text available Text: SIEMENS SPW20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:	OCR Scan	SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5	PDF
a02 Transistor rf Abstract: transistor bf 198 Text: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package	OCR Scan	a23StiG5 0DG444b BF198 023Sfe QQQ4450 a02 Transistor rf transistor bf 198	PDF
P2462-J29 Abstract: No abstract text available Text: SIEMENS Control ICs for Switched-Mode Power Supplies TDA 4601 ; -D Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic Base current drive proportional to collector current	OCR Scan	P-DIP-18 67000-A2379 601-D 67000-A2390 P-DIP-18-1 4601/D P2462-J29	PDF

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TRANSISTOR SIEMENS SS Search Results

TRANSISTOR SIEMENS SS Result Highlights (5)

TRANSISTOR SIEMENS SS Datasheets Context Search

BUP101

2sc 103 transistor

BD429

S100 NPN Transistor

bfr 547

Transistor BFR 96

3004x

Transistor BFT 99

BF324

TRANSISTOR D 570

DIODE JS.9 smd

Untitled

03N60S5

02N60S5

FAG 32 diode

Transistor BFX 90

ABE 422

Untitled

Transistor C G 774 6-1

29Z3

Untitled

20N60S5

a02 Transistor rf

P2462-J29