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    TRANSISTOR P75N02LDG Search Results

    TRANSISTOR P75N02LDG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P75N02LDG Datasheets Context Search

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    P75N02LDG

    Abstract: transistor P75N02LDG Niko Semiconductor p75n02ldg P75N02LD dpak code field effect transistor TO252-DPAK
    Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P75N02LDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 5mΩ 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P75N02LDG O-252 P75N02LDG" SEP-02-2004 P75N02LDG transistor P75N02LDG Niko Semiconductor p75n02ldg P75N02LD dpak code field effect transistor TO252-DPAK

    P75N02LDG

    Abstract: P75N02
    Text: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)


    Original     		PDF ELM32428LA-S ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG P75N02

    P75N02LDG

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)


    Original     		PDF ELM32428LA-S ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG

    P75N02LDG

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM32428LA-S •概要 ■特長 ELM32428LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=75A ・ Rds on < 7mΩ (Vgs=10V) ・ Rds(on) < 10mΩ (Vgs=4.5V)


    Original     		PDF ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG

    ELM32428LA

    Abstract: No abstract text available
    Text: 单 N 沟道 MOSFET ELM32428LA-S •概要 ■特点 ELM32428LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=75A ·Rds on < 7mΩ (Vgs=10V) ·Rds(on) < 10mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		PDF ELM32428LA-S P75N02LDG O-252 Jun-11-2005 ELM32428LA