2222A transistor
Abstract: 300MIL HMS38112 HMS39112 MO-137 MS-001 MS-013
Text: Dec. 2001 VER. 1.00 4-BIT SINGLE CHIP MICROCOMPUTERS HMS38112/39112 USER`S MANUAL • HMS38112 • HMS39112 VER. 1.00 Published by MCU Application Team in MagnaChip Semiconductor Ltd. Co., Ltd. MagnaChip Semiconductor Ltd. 2004 All Right Reserved. ⓒ Additional information of this manual may be served by MagnaChip Semiconductor Ltd. Offices in
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HMS38112/39112
HMS38112
HMS39112
27c256
2222A transistor
300MIL
HMS38112
HMS39112
MO-137
MS-001
MS-013
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2222A transistor
Abstract: MARKING HYNIX hynix naming IR REMOTE Hynix 300MIL HMS38112 HMS39112 MO-137 MS-001 MS-013
Text: Dec. 2001 VER. 1.00 4-BIT SINGLE CHIP MICROCOMPUTERS HMS38112/39112 USER`S MANUAL • HMS38112 • HMS39112 4-BIT SINGLE CHIP MICROCOMPUTERS HMS38112/39112 USER`S MANUAL • HMS38112 • HMS39112 VER. 1.00 Published by MCU Application Team in HYNIX Semiconductor Inc. Co., Ltd.
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HMS38112/39112
HMS38112
HMS39112
27c256
2222A transistor
MARKING HYNIX
hynix naming
IR REMOTE Hynix
300MIL
HMS38112
HMS39112
MO-137
MS-001
MS-013
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transistor ld3
Abstract: 2SK703 T500
Text: N E C ELECTRONICS INC Tfl DE | t,4E7525 OQlñññM T |~884 D T - 3 ?• : '¡ ^ 7 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK703 D E S C R IP T IO N The 2 S K 7 0 3 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, m otor and lamp driver.
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b427555
2SK703
2SK703
T-39-11
transistor ld3
T500
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BUK426-1000A
Abstract: BUK426-1000B BUK426-100
Text: 7Z39-// Philips Components Data sheet status Product specification date of issue M arch 1991 B U K 426 - 1OO OA/B PowerMOS transistor PHILIPS INTERNATIONAL SkE D • 711082b 004M135 SSI H P H I N GENERAL DESCRIPTION
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BUK426-1OOOA/B
711002b
BUK426
-1000A
-1000B
-SOT199
T-39-11
K426-10OOA/B
BUK426-1000A
BUK426-1000B
BUK426-100
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I PS/DISCRETE bbS3131 00E0S7Q fi E5E D BUK427-450B PowerMOS transistor r - 3<3-ii G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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bbS3131
00E0S7Q
BUK427-450B
427-450B
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MPA92
Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Text: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability
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TBLF245
OT123
-SOT123
711002b
BLF245
T-39-11
7110fl2b
MPA92
68W* transistor
68w transistor
SOT123 Package
BH RV transistor
International Power Sources
P101
sot123
GZ22
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE ObE D PowerMOS transistor • bbSB^l 0014535 T ■ “ BUZ78 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ78
BUZ78_
D01454Q
T-39-11
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Untitled
Abstract: No abstract text available
Text: BUZ74A PowerMOS transistor N AMER PHILIPS/DISCRETE ObE D • bfc.53131 0014514 5 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ74A
BUZ74A_
T-39-1I
bbS3T31
T-39-11
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blf544b
Abstract: 015 capacitor philips 74649 BH RV transistor PHILIP RESISTOR 2322
Text: Philip« Sem iconductors Product »pacification UHF push-pull power MOS transistor PHILIPS T - 3^ - /I INTERNATIONAL SbE T> • BLF544B 71100Bb OOMBTflS 177 B I P H I N PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability
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7110flBb
OT268
OT268
BLF544B
blf544b
015 capacitor philips
74649
BH RV transistor
PHILIP RESISTOR 2322
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transistor ZA 16
Abstract: BUZ11 IEC134 T0220AB
Text: N AMER P H I L I P S / D I S C R E T E QbE d PowerMOS transistor • b 353^31 D o m 3 aa 1 " BUZ11 r - 3 ^ 1! May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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DD143fifl
T-39-11
transistor ZA 16
BUZ11
IEC134
T0220AB
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BUZ83A
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D • PowerMOS transistor hbS3T31 DOlMbfii 4 ■ BUZ83A T - n - i i July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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BUZ83A
7Z8388S
bbS3T31
T-S9-11
BUZ83A
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BUZ90A
Abstract: No abstract text available
Text: _!_PowerMQS transistor_ BUZ90A^ N AMER PHILIPS/DISCRETE QbE D • ^53*131 0014556 2 ■ r - 3 9 - i/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUZ90A^
T-39-11
0D14S3a
BUZ90A
bbS3131
0Q14534
BUZ90A
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BUZ50C
Abstract: T0220AB
Text: PowerMQS transistor N AUER PHILIPS/DISCRETE BUZ50C OLE D • [^53^31 0014570 1 ■ " T -3 1 -1 1 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BIIZ50C
T0220AB;
BUZ50C
BUZ50C
T0220AB
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BUZ73
Abstract: K 3911 transistor "" transistor T0220AB
Text: N AMER PHILIPS/DISCRETE OL.E D • L,Li53cì31 0 0 1 4 4 5 0 FowerMUS transistor " 7 ■ BUZ73 T~ 37- j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ73
T0220AB;
D0144b3
BUZ73
T-39-11
K 3911
transistor ""
transistor
T0220AB
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BUZ10
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53T31
BUZ10
D0143flb
T-39-11
7Z21184
BUZ10_
BUZ10
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Untitled
Abstract: No abstract text available
Text: PowerMOS transistor_BUZ90_ N AMER PHILIPS/DISCRETE OLE D • bb53131 0Q14S51 T ■ T -3 < p ii May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUZ90_
bb53131
0Q14S51
BUZ90
bb53T31
T-39-11
T-39-11-
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 DD144D2 5 ■ PowerM OS transistor BU Z71 |j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
DD144D2
bb53T31
BUZ71
T-39-11
00144D7
BUZ71_
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BUZ78
Abstract: T0-220AB transistor a7j T0220AB transistor 800V 1A
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor □LE • d “ GomsBs B U Z 78 ■ t ” T - 3 1 -1 1 May 1987 g e n e r a l d e s c r ip t io n N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0G14S35
BUZ78
BUZ78_
BUZ78
T0-220AB
transistor a7j
T0220AB
transistor 800V 1A
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K 3911
Abstract: transistor k 3911 transistor 86 y 87 BUZ11A T0220AB PAD35
Text: PowerMOS transistor_ N AMER PHILIPS/DISCRETE GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding, DC/DC and DC/AC converters,
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BUZ11A
001431S
T-39-11
T0220AB;
7Z21186
K 3911
transistor k 3911
transistor 86 y 87
BUZ11A
T0220AB
PAD35
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Transistor Bo 17
Abstract: BUK426-50A BUK426-60A BUK426-60B PINNING-SOT199
Text: PHILI PS INTERNATIONAL 5L.E T> 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 BUK426-60A/B 7^39-t/ PowerMOS transistor Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK426-50A/B
G0N4115
K426-60A/B
PINNING-SOT199
BUK426
Transistor Bo 17
BUK426-50A
BUK426-60A
BUK426-60B
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BUZ21
Abstract: No abstract text available
Text: _ ObE D N AMER PHILIPS/DISCRETE • PowerMOS transistor bbS 3 T 31 0 0 1 4 4 3 3 T ■ BUZ21 t -SI-W May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUZ21
BUZ21_
00144ES
T-39-11
Y-39-11
BUZ21
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BUK451-100A
Abstract: K451 BUK451-100B T0220AB transistor 513
Text: -7^ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK451-100A/B
7110fl2b
BUK451
-100A
-100B
T0220AB
T-39-11
711082t
BUK451-100A
K451
BUK451-100B
transistor 513
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C4171
Abstract: MCI455 MJ6308 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 2N6308 AM503 MJ16006 MTP8P10
Text: M OTO RO LA SC XSTRS/R F MOTOROLA 1EE D SEM IC O N D U C T O R TECHNICAL DATA I Order this data sheet by MJ6308/D b3b?254 QOflSbSb Designer's Data Sheet S w itc h m o d e N P N Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p lication s
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MJ6308/D
MJ6308
2N6308
2N6308
MJ6308
C4171
MCI455
2n6308 TRANSISTOR REPLACEMENT
two transistor flyback
MJE16106
AM503
MJ16006
MTP8P10
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500c t2
Abstract: BUK627-500A BUK627-500B BUK627-500C
Text: N AMER P H I L I P S / D I S C R E T E SSE D m ^53*131 GD2Gbba PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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bb53131
BUK627-500A
BUK627-500B
BUK627-500C
-r-37-
BUK627
-500A
-500B
-500C
500c t2
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