TRANSISTOR K 117 GR Search Results

TRANSISTOR K 117 GR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR K 117 GR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Power Semiconductor Applications Philips Semiconductors Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471 Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management	Original	PDF
TIP110 equivalent Abstract: No abstract text available Text: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220	Original	PDF	TIP110/111/112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 TIP110 equivalent
2N3442 MOTOROLA Abstract: 2N3442 transistor 2n3442 Text: MOTOROLA Order this document by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and	Original	PDF	2N3442/D* 2N3442/D 2N3442 MOTOROLA 2N3442 transistor 2n3442
Untitled Abstract: No abstract text available Text: ON Semiconductort 2N3442 High−Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 10 AMPERE POWER TRANSISTOR	Original	PDF	2N3442 O-204AA
MJE224 Abstract: pnp power transistor Text: ON Semiconductor NPN Plastic Medium−Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general−purpose amplifier and low−speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ) @ IC	Original	PDF	TIP110 TIP111* TIP112 TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 O-220AB MJE224 pnp power transistor
SE 7889 Abstract: Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909 Text: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features     Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio	Original	PDF	Si3216 16-bit SE 7889 Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909
transistor k 975 Abstract: transistor nf 37 transistor k 117 GR Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1162 Features • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.	Original	PDF	2SA1162 15Watts OT-23-3L -100uAdc, -50Vdc, transistor k 975 transistor nf 37 transistor k 117 GR
Si3216 Abstract: No abstract text available Text: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Software-programmable features and parameters: Ringing frequency, amplitude, cadence, and waveshape 2-wire ac impedance and hybrid	Original	PDF	Si3216 GR-909 Si3216
MJE224 Abstract: tip111g TIP11X Text: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •	Original	PDF	TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP115 TIP116 MJE224 tip111g TIP11X
L16 eeprom Abstract: socket M vid pinout Text: TSPC750IP Processor and Cache Module DESCRIPTION The Processor and Cache Module PCM is a 17 x 17 pin grid array (PGA) circuit assembly which combines a PowerPCt microprocessor and SRAM components into a CPU subsystem. The PCM provides a standard mechanical, electrical, and	Original	PDF	TSPC750IP L16 eeprom socket M vid pinout
WORKING PRINCIPLE IR SENSOR Abstract: "BJT Transistors" IR phototransistor TRANSISTOR SUBSTITUTION BJT Transistors qrb1114 phototransistor as sensor parallax infrared sensor WORKING PRINCIPLE OF proximity sensor working principle of encoder Text: Web Site: www.parallax.com Forums: forums.parallax.com Sales: [email protected] Technical: [email protected] Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Errata for Process Control v1.0 (#122-28176) Chapter 4 Opto-Reflective Switch Use	Original	PDF
marking w4s Abstract: power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 Q62702-C2481 400w transistor TA-1004 "NPN Transistor" Text: BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from	Original	PDF	200mA Q62702-C2481 OT-343 Nov-27-1996 BCR400 marking w4s power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 400w transistor TA-1004 "NPN Transistor"
tip117 TRANSISTOR equivalent Abstract: TIP110 TIP110G TIP111 TIP111G TIP112 TIP115 TIP116 TIP117 TIP110 application note Text: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching	Original	PDF	TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP112, TIP117 tip117 TRANSISTOR equivalent TIP110 TIP110G TIP111 TIP111G TIP112 TIP115 TIP116 TIP110 application note
transistor Amp 3055 Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055 Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@	OCR Scan	PDF	625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055

BC260 Abstract: No abstract text available Text: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case	OCR Scan	PDF	BC260 BC260
HPV-S11 Abstract: Yamatake hpv-s12 transistor 2248 BA RV HPV-S12 ENV-50140 ENV50140 Text: OPERATING MODE 'LIGHT ON' 'DARK ON' CATALOG LISTING HPV-S11 HPV-S12 CORD LENGTH CATALOG LISTING LIGHT INDICATOR GREEN CORD LENGTH H P V -S * 2 0 0 0 m in . H P V -S -L 0 5 5 0 0 0 m in . H P V -S -L 1 0 10 000m in. POWER INDICATOR (RED) 2 CORD OIL R ESIST 0 2mm	OCR Scan	PDF	HPV-S11 HPV-S12 2000min. 5000min. 10000min. JE099-2014 JE098-2003 JE097-2113 JE095-2007 JE094--2248 Yamatake hpv-s12 transistor 2248 BA RV HPV-S12 ENV-50140 ENV50140
Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC =13 D • 0S0433Ö 0G037M7 □ ■ A L GR T-91-01 PROCESS YFA Process YFA NPN Power Darlington Transistor Process YFA is a double-diffused epitaxial planar N P N silicon Darlington pair. It is designed for use in high-gain, high-power amplifiers. Its complement is	OCR Scan	PDF	0S0433Ã 0G037M7 T-91-01
TRANSISTOR SE 140 Abstract: 2N3442 MOTOROLA TRANSISTOR SE 135 Text: MOTOROLA Order this document by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N 3442 H igh-P ow er Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and	OCR Scan	PDF	2N3442/D 2N3442D TRANSISTOR SE 140 2N3442 MOTOROLA TRANSISTOR SE 135
photo-electric switch Abstract: Yamatake ENV-50140 HPV-D13 Yamatake HPV-D13 ENV50140 HPV-D13-L10 transistor 2248 Text: SR. No. m LP i CL LJ od Yamatake Corporation m s t±mm SPECIFICATIONS OPERATING MODE 'LIGHT ON'/'DARK ON' SELECTIVE CATALOG LISTING H P V -D 1 3 OPTICAL AXIS 1,2 CORD LENGTH CATALOG LISTING OPTICAL AXIS 1 OPTICAL AXIS 1 LIGHT INDICATOR GREEN OPTICAL AXIS 2	OCR Scan	PDF	HPV-D13 HPV-D13 2000min. HPV-D13-L05 5000min. HPV-D13-L10 10000min. JE099-2014 50/60HZ 500m/s2 photo-electric switch Yamatake ENV-50140 Yamatake HPV-D13 ENV50140 transistor 2248
Untitled Abstract: No abstract text available Text: HEW LETT-PA CKARD/ CHPNTS b lE » Thal H EW LETT • M4M75AM GOCHflb? 074 HHPA AT-60586 Up to 6 GHz Low Noise Silicon Bipolar Transistor 1 "MM P A C K A R D Features 86 Plastic Package • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz	OCR Scan	PDF	M4M75AM AT-60586
2N3442 Abstract: 2N4347 transistor 2n3442 NPN Transistor 10A 70V NPN 300 VOLTS vce POWER TRANSISTOR HF9 transistor pec 928 Text: Æà MOS PEC HIGH-POWER INDUSTRIAL TRANSISTORS NPN 2N3442 NPN silicon power transistors designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 2N4347 FEATURES:	OCR Scan	PDF	2N4347 2N3442 2N3442 2N4347 transistor 2n3442 NPN Transistor 10A 70V NPN 300 VOLTS vce POWER TRANSISTOR HF9 transistor pec 928
transistor vergleichsliste Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N	OCR Scan	PDF
c2481 Abstract: transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 BCR400W Q62702-C2481 103 ma siemens gaas fet npn marking tx Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A pplication notes • Stabilizing bias current of NPN transistors and FETs from	OCR Scan	PDF	200mA BCR400W Q62702-C2481 OT-343 BCR400 235b05 00aTfl05 EHA07219 c2481 transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 103 ma siemens gaas fet npn marking tx
Untitled Abstract: No abstract text available Text: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve	OCR Scan	PDF	bbS3T31 BLV98CE OT171 bb53T31 MCA924

TRANSISTOR K 117 GR Search Results

TRANSISTOR K 117 GR Result Highlights (5)

TRANSISTOR K 117 GR Datasheets Context Search

Power Semiconductor Applications Philips Semiconductors

TIP110 equivalent

2N3442 MOTOROLA

Untitled

MJE224

SE 7889

transistor k 975

Si3216

MJE224

L16 eeprom

WORKING PRINCIPLE IR SENSOR

marking w4s

tip117 TRANSISTOR equivalent

transistor Amp 3055

BC260

HPV-S11

Untitled

TRANSISTOR SE 140

photo-electric switch

Untitled

2N3442

transistor vergleichsliste

c2481

Untitled