BQ HSX
Abstract: BQ lSX PT500 RTD PT1000 CONVERSION TABLE SY 356 PT500 Resistance Table PT500 thermocouple PT1000 table PT1000 table CONVERSION Pt100-250-500-1000
Text: Digital Panel Meters Modular signal conditioner Type USC-DIN • • • • • • • Multi-input modular signal’s conditioner 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements; selectable full scales 200µA to 5A
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200mV
Pt100-250-500-1000,
Ni100,
20mA/10VDC
RS485
RS232
USCDS040706
RS232
USCDS0407063
BQ HSX
BQ lSX
PT500 RTD
PT1000 CONVERSION TABLE
SY 356
PT500 Resistance Table
PT500 thermocouple
PT1000 table
PT1000 table CONVERSION
Pt100-250-500-1000
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PT1000 CONVERSION TABLE
Abstract: PT1000 table 20-200-500V PT100 IEC B PT100 tempered PT1000 RTD SY 356 thermo couple PT100 stick udm40 thermoresistance
Text: Digital Panel Meters Modular Indicator and Controller Type UDM40 • • • • • • • • The alarm status can be coupled to the different colour of the display • Linearization of V and A inputs up to 16 points • • • • • • Multi-input modular instrument 4 dgt LED
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UDM40
200mV
Pt100-250-500-1000,
Ni100,
20mA/10VDC
RS485
RS232
UDM40DS
PT1000 CONVERSION TABLE
PT1000 table
20-200-500V
PT100 IEC B
PT100 tempered
PT1000 RTD
SY 356
thermo couple PT100 stick
udm40
thermoresistance
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PT250 RTD
Abstract: BQ HSX PT250 table Pt100-250-500-1000 UDM35DS PT1000 table npn 1000V 100a PT100 IEC B pt100/PT100 PT1000 CONVERSION TABLE
Text: Digital Panel Meters Modular Indicator and Controller Type UDM35 • • • • • • • • • • • Multi-input modular instrument 3 1/2 dgt LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements: selectable full scales
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UDM35
200mV
Pt100-250-500-1000,
Ni100,
20mA/10VDC
RS485
RS232
pan48mm
UDM35DS
PT250 RTD
BQ HSX
PT250 table
Pt100-250-500-1000
PT1000 table
npn 1000V 100a
PT100 IEC B
pt100/PT100
PT1000 CONVERSION TABLE
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Untitled
Abstract: No abstract text available
Text: Digital Panel Meters Modular Indicator and Controller Type USC-DIN • • • • • • • • Multi-input modular signal’s conditioner 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements; selectable full scales
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200mV
Pt100-250-500-1000,
Ni100,
001Hz
50kHz)
20mA/10VDC
RS485
RS232
RS232
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BQ2001
Abstract: No abstract text available
Text: Q Series Data Sheet 66 – 132 Watt DC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 V • Class I equipment • Extremely high efficiency of up to 90%
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BCD20011-
12-Mar-2012
BQ2001
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DIN 41612 H15 male
Abstract: Melcher M 1000 Melcher LK 2660-7R 1001-7R 1301-7R Melcher converter s 1000 MELCHER THE POWER PARTNERS melcher Melcher LK 2000 marking v6 zener diode
Text: DC-DC Converters >100 W 8 DC-DC Converters >100 W 8.1 Rugged Environment Output [W] 20 40 60 100 120 150 8.2 3 Input [V DC] 10 30 70 140 220 380 Product Family Case Page K K02 8-2 Product Family Case Page Q Q01 8 - 29 Product Family Case Page Industrial Environment
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bq 3060
Abstract: Melcher BQ 2320
Text: Industrial Environment DC-DC Converters >100 W 100 W DC-DC Converters Q-Family Q-Family Input to output isolation Single output: Series BQ.GQ 1000 Double output: Series BQ.GQ 2000 • Extremely high efficiency of up to 91 % • Excellent protection, 2 kVrms input to output
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hef4051
Abstract: 74AUP2G34 74LVT1403 74ABT543A 74LV74 74AVCH1T45 74HC590 CBTD3306 NCX2200 74HC40103
Text: ロジック IC データスイッチ/アナログスイッチ コンパレータ レベルシフタ 汎用ロジック Index 2 ●● P3 NXP ロジック ●● P4 低抵抗アナログスイッチ/データスイッチ ●● P7 コンパレータ ●●
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2660-7R
Abstract: bq 3060
Text: Cassette Style DC-DC Converters 60.132 Watt DC-DC Converters Q Series Q Series Input voltage ranges up to 168 V DC 1 or 2 isolated outputs 3.3.48 V DC 3 kV AC I/O electric strengh test voltage • Extremely high efficiency of up to 88% • Flexible output power
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2PB601A
Abstract: 2PB601
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PB709A PNP general purpose transistor Product specification Supersedes data of 1997 Jun 19 1999 Apr 23 Philips Semiconductors Product specification PNP general purpose transistor 2PB709A FEATURES PINNING
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M3D114
2PB709A
SC-59
2PB601A.
2PB709AQ
2PB709AS
MAM322
2PB709AR
SCA63
2PB601A
2PB601
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { DISC RE TE /O PT O} TT 9097250 TOSHIBA DISCRETE/OPTO DE I TGT7ES0 □□lb?D4 3 | 99D 16704 SEMICONDUCTOR DT-Bq-I] TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 5 3 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (7T-M0S) INDUSTRIAL APPLICATIONS _ Unit in nun
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O-220
ITDT72S0
DDlt70t.
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2SC3183
Abstract: No abstract text available
Text: Ordering number: EN 1251A 2 S C 3 1 8 3 No.1251A SAN YO F NPN Triple Diffused Planar Silicon Transistor H i g h - S p e e d S w i t c h i n g Ap p l i c a t i o n s i Features . High breakdown voltage Vq Bq ^900V . High switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25°C
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12B1A
2SC3183
PW-300psfDuty
2SC3183
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dm0063
Abstract: D0061b D0061A Doo61A 3N60
Text: Series DO, DMO 1-3.0 Am p • 60 V dc* DC O utput MINI-SIP Compact for High Density FCB Mount SFST-NO DC output relays in epoxy coated packages utilize the popular .10" grid lead spacing. They are avail able with either bipolar transistor out put DO , or the DM0063 w ith MOSFET
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DM0063
CA92123
D-66687
D0061b
D0061A
Doo61A
3N60
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } ‘n DE 1 ^ 7 5 5 1 ] 99D 16659 9097250 TOSHIBA <DISCRETE/OPTO ¿/oih'ilu DDltbSi a f i - n - s TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2SK38 5 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS
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2SK38
100nA
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SCR CONTROL BY PUT CIRCUIT
Abstract: scr drive circuit diagram scr regulator 10A SCR device chip scr norton-10 SCR gate protection circuit 4 pin SCR gate drive circuit 300 Volt scr SCR 100A
Text: n I| UC1908 UC2908 UC3908 fi IN T E G R A T E D I | C IR C U IT S ^ UNITRODE PRELIMINARY Programmable Voltage Clamp FEATURES DESCRIPTION Shunt Regulator Keeps Power Supply Overvoltage to a Predetermined Level Programmable Input From 3V to 10V Internal 1.14V Reference
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UC1908
UC2908
UC3908
SCR CONTROL BY PUT CIRCUIT
scr drive circuit diagram
scr regulator
10A SCR device
chip scr
norton-10
SCR gate protection circuit
4 pin SCR gate drive circuit
300 Volt scr
SCR 100A
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Untitled
Abstract: No abstract text available
Text: H ^-*11 ft? H A R R IS Ë S E M I C O N D U C T O R t Ê ARINC 429 Bus Interface Line Driver Circuit March 1997 Features Description • TTL and CMOS Com patible Inputs The HS-3182 is a monolithic dielectrically isolated bipolar differ ential line driver designed to meet the specifications of ARINC
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HS-3182
HS-3282
HS-3182
500pF,
25kHz
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Untitled
Abstract: No abstract text available
Text: HS-3182 Semiconductor ARINC 429 Bus Interface Line Driver Circuit March 1997 Description Features TTL and CMOS Compatible Inputs The HS-3182 is a monolithic dielectrically isolated bipolar differ ential line driver designed to meet the specifications of ARINC
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HS-3182
HS-3182
HS-3282
500pF,
25kHz
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Germanium Power Diodes
Abstract: BD3 tunnel diode Germanium Power Devices
Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage
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350mv)
Germanium Power Diodes
BD3 tunnel diode
Germanium Power Devices
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BUK445-500B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711062b
BUK445-500B
-SOT186
BUK445-500B
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kbr 4.0M
Abstract: TM 511720 TI 51173 transistor LC6523
Text: Ordering number: EN%5117 CMOS LSI No. * 5117 LC6529N, 6529F, 6529L 4-Bit Microcomputer for Small-Scale Control Applications Preliminary Overview The LC6529N/F/L provides the basic architecture and instruction set of the Sanyo LC6500 Series of 4-bit single
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LC6529N,
6529F,
6529L
LC6529N/F/L
LC6500
LC6529F
LC6529H.
kbr 4.0M
TM 511720
TI 51173 transistor
LC6523
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ED 89A diode
Abstract: No abstract text available
Text: HAL525 Hall Effect Sensor 1C in CMOS technology Specifications - switching type: latch Introduction The HAL525 is a Hall switch produced in CMOS technol ogy. The sensor includes a temperature-compensated Hall plate with active offset compensation, a Schmitt trig
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HAL525
HAL525
ED 89A diode
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Untitled
Abstract: No abstract text available
Text: CMOS 8-Bit Buffered Multiplying D/A Converter PM-7524 ANALOG DEVICES □ FEATURES CR O SS REFER E N C E ±1/8 LSB Maximum Nonlinearity Over Temperature ±0.002 LSB Maximum Zero-Scale Error lLKG 10nA ±1 LSB Maximum Gain Error Over Temperature Microprocessor Compatible
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PM-7524
PM7524AQ
PM7524BQ
PM7524BRC/883
PM7524EQ
PM7524FQ
PM7524FPC
PM7524FS
PM7524FP
AD7524CD
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AD7524AD
Abstract: ua 7524 pm7524fs
Text: CMOS 8-Bit Buffered Multiplying D/A Converter PM-7524 ANALOG DEVICES FEATURES CROSS REFERENCE • ±1 /8 LSB Maximum Nonlinearity Over Temperature • ±0.002 LSB Maximum Zero-Scale Error ILKq 10nA • ±1 LSB Maximum Gain Error Over Temperature • Microprocessor Compatible
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PM-7524
PM7524AQ
PM7524BQ
PM7524EQ
PM7524FQ
PM7524GP
PM7524FP
PM7524FPC
AD7524AD
ua 7524
pm7524fs
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PM7524FP
Abstract: PM7524 AD7524BD PM-7524 PM7524AQ PM7524BQ PM7524EQ PM7524FPC PM7524FQ PM7524FS
Text: ANALOG DEVICES INC 42E D A N A LO G D E V IC E S FEATURES CROSS REFERENCE ±1/8 LSB Maximum Nonlinearity Over Temperature ±0.002 LSB Maximum Zero-Scale Error I lkû 10nA ±1 LSB Maximum Gain Error Over Temperature Microprocessor Compatible Improved Resistance to ESD
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PM-7524
T-51-Ã
PM7524FP
PM7524
AD7524BD
PM-7524
PM7524AQ
PM7524BQ
PM7524EQ
PM7524FPC
PM7524FQ
PM7524FS
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