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Infineon Technologies AG SPD03N60C3ATMA1 MOSFET N-CH 600V 3.2A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD03N60C3ATMA1	Cut Tape	17,260		1	1 $1.94 10 $1.236 100 $1.94 1000 $0.60742 10000 $0.60742	Buy Now
	SPD03N60C3ATMA1	Digi-Reel	17,260		1	1 $1.94 10 $1.236 100 $1.94 1000 $0.60742 10000 $0.60742	Buy Now
	SPD03N60C3ATMA1	Reel	15,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.52375	Buy Now
Rochester Electronics	SPD03N60C3ATMA1		54		1	1 $0.5819 10 $0.5819 100 $0.547 1000 $0.4946 10000 $0.4946	Buy Now
EBV Elektronik	SPD03N60C3ATMA1			16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STB13N60M2 MOSFET N-CH 600V 11A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB13N60M2	Cut Tape	7,620		1	1 $3 10 $1.945 100 $3 1000 $1.08708 10000 $1.08708	Buy Now
	STB13N60M2	Digi-Reel	7,620		1	1 $3 10 $1.945 100 $3 1000 $1.08708 10000 $1.08708	Buy Now
	STB13N60M2	Reel	5,000		1,000	1 - 10 - 100 - 1000 $1.00455 10000 $1.00455	Buy Now
Newark	STB13N60M2	Cut Tape	314		1	1 $2.36 10 $2 100 $1.63 1000 $1.22 10000 $1.22	Buy Now
STMicroelectronics	STB13N60M2		968		1	1 $2.23 10 $1.72 100 $1.24 1000 $1.01 10000 $1.01	Buy Now
Bristol Electronics	STB13N60M2		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STB13N60M2			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STB13N60M2			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STL13N60M6 MOSFET N-CH 600V 7A POWERFLAT HV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL13N60M6	Digi-Reel	2,490		1	1 $2.61 10 $1.68 100 $2.61 1000 $0.85316 10000 $0.85316	Buy Now
	STL13N60M6	Cut Tape	2,490		1	1 $2.61 10 $1.68 100 $2.61 1000 $0.85316 10000 $0.85316	Buy Now
Avnet Americas	STL13N60M6	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.74366	Buy Now
STMicroelectronics	STL13N60M6				1	1 $2.21 10 $1.53 100 $1.08 1000 $0.87 10000 $0.87	Buy Now
Avnet Silica	STL13N60M6			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STL13N60M6			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STB33N60DM2 MOSFET N-CH 600V 24A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB33N60DM2	Cut Tape	1,015		1	1 $5.34 10 $3.557 100 $5.34 1000 $2.1132 10000 $2.1132	Buy Now
	STB33N60DM2	Digi-Reel	1,015		1	1 $5.34 10 $3.557 100 $5.34 1000 $2.1132 10000 $2.1132	Buy Now
	STB33N60DM2	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.00062 10000 $2.00062	Buy Now
STMicroelectronics	STB33N60DM2		1,050		1	1 $4.66 10 $3.24 100 $2.35 1000 $2.02 10000 $2.02	Buy Now
Avnet Silica	STB33N60DM2			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STB33N60DM2			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	STB33N60DM2		18,600			1 - 10 - 100 $2.5585 1000 $2.2174 10000 $2.2174	Buy Now
STMicroelectronics STP33N60DM6 MOSFET N-CH 600V 25A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STP33N60DM6	Tube	976		1	1 $4.1 10 $2.741 100 $4.1 1000 $4.1 10000 $4.1	Buy Now
EBV Elektronik	STP33N60DM6			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 3N60 price and stock on Findchips.com

3N60 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
3N60	Unisonic Technologies	3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF
3N60	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
3N60	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
3N60	Unknown	GE Transistor Specifications	Scan	PDF
3N60	Unknown	Cross Reference Datasheet	Scan	PDF
3N60-A-TA3-T	Unisonic Technologies	3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF
3N60-B-TA3-T	Unisonic Technologies	3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF
3N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
3N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
3N60C3S	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
3N60L-A-TA3-T	Unisonic Technologies	3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF

3N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
3N60 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	QW-R502-110 3N60
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	3N60K 3N60K O-220F O-220F2 O-252 QW-R502-838
3n60 MOSFEt Abstract: 3N60 TO-22F 3N60L 3N60B f3n60 3N60A PART NO Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	QW-R502-110 3n60 MOSFEt 3N60 TO-22F 3N60L 3N60B f3n60 3N60A PART NO
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	3N60L QW-R502-110
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	QW-R502-110
Untitled Abstract: No abstract text available Text: IXTA 3N60P IXTP 3N60P IXTY 3N60P PolarHVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous	Original	PDF	3N60P O-263 O-220
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD 3N60Z Power MOSFET 3 A, 6 0 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON 1 The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	3N60Z 3N60Z O-220F QW-R502-744
3N60 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60A Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	PDF	3N60A 3N60A QW-R502-610 3N60
3n60 MOSFEt Abstract: 3N60 Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	O-220 O-220F O-252 QW-R502-110 3n60 MOSFEt 3N60
3N60 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	O-220 3N60L QW-R502-110 3N60
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60K-MT Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60K-MT is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	3N60K-MT 3N60K-MT QW-R205-044
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	3N60L QW-R502-110
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60K-MK Preliminary Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60K-MK is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	3N60K-MK 3N60K-MK QW-R205-010
3N60P Abstract: No abstract text available Text: Advance Technical Information IXTA 3N60P IXTP 3N60P IXTY 3N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 = 2.8 ≤ 2.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	3N60P 405B2 3N60P

3N60P Abstract: 3N60 Text: IXTA 3N60P IXTP 3N60P IXTY 3N60P PolarHVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous	Original	PDF	3N60P 3N60P 3N60
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	3N60K 3N60K QW-R502-838
STK411-230E Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	PDF	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
3N60 Abstract: No abstract text available Text: Power Management IPS102 IN-PLUG series: IPS102 Critical Mode PFC Controller Low Cost, High Efficiency PRELIMINARY REV. 5 INTRODUCTION FEATURES DESCRIPTION  The IN-PLUG IPS102 is a primary-side switching controller which provides simple yet high performance active power factor correction PFC .	Original	PDF	IPS102 IPS102 1290-B AADS00002/AA605M 3N60
IPS15HI Abstract: Q817C Text: IN-PLUG IPS1 5 H Datasheet – Rev.10 – Hiccup flyback Cont® r oller – Easy Opt o Failsaf e Pr ot ect ion IN-PLUG series: IPS1 5 H Enhanced Off-line Swit cher Wit h Hiccup, Low Cost, High Efficiency, Low Stand-By Power. Fail- Saf e Protection from Optocoupler Failure	Original	PDF	IPS15H IPS15 1290-B IPS15HI Q817C
Q817C Abstract: flyback transformer diagram crt Text: Synchronizable Flyback Controller IPS1 6 Pr eliminar y Dat asheet Rev. 2 IN-PLUG series Low Cost, High Efficiency, Low Power Synchronizable Flyback Controller IPS1 6 PRELIMINARY DATASHEET REV2 INTRODUCTION DESCRIPTION The IN-PLUG® IPS16 has been designed for low-cost,	Original	PDF	IPS16 IPS15 1290-B Q817C flyback transformer diagram crt
TP3N60 Abstract: p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60 Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N60 M T P 3N 55 M T P 3N 60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TM O S POWER FETs 3 AMPERES rDS on = 2 5 OH M S 550 and 600 VOLTS These TM O S P ow er FETs are designed fo r high vo ltag e , high	OCR Scan	PDF	MTM/MTP3N60, MTP3N55 TP3N60 p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60
2T931A Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K	OCR Scan	PDF	MOKP51KOB, KTC631 TI2023 II2033 TT213 TI216 fI217 II302 XI306 n306A 2T931A KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
2N80 Abstract: 5P30 Text: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTINGG LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14 J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _	OCR Scan	PDF	DIP-14 DIP-G14* 2N100 3KI33 3N100 5N100 2N80 5P30

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3N60 Search Results

3N60 Price and Stock

Infineon Technologies AG SPD03N60C3ATMA1

STMicroelectronics STB13N60M2

STMicroelectronics STL13N60M6

STMicroelectronics STB33N60DM2

STMicroelectronics STP33N60DM6

3N60 Datasheets (11)

3N60 Datasheets Context Search

3N60

Untitled

3n60 MOSFEt

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3N60

3n60 MOSFEt

3N60

Untitled

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3N60P

3N60P

Untitled

STK411-230E

3N60

IPS15HI

Q817C

TP3N60

2T931A

EATON CM20A

2N80