2PB601A
Abstract: 2PB601
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PB709A PNP general purpose transistor Product specification Supersedes data of 1997 Jun 19 1999 Apr 23 Philips Semiconductors Product specification PNP general purpose transistor 2PB709A FEATURES PINNING
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M3D114
2PB709A
SC-59
2PB601A.
2PB709AQ
2PB709AS
MAM322
2PB709AR
SCA63
2PB601A
2PB601
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transistor marking PB
Abstract: Transistor marking BQ sot marking code BQ sot323 transistor marking 2SC4081W transistor bq
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4081W FEATURES z Excellent hFE linearity. z Complements the 2A1576A Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.
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2SC4081W
2A1576A
OT-323
BL/SSSTF002
transistor marking PB
Transistor marking BQ
sot marking code BQ
sot323 transistor marking
2SC4081W
transistor bq
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transistor bq
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0pF. z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412
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2SC2412
2SA1037
OT-23
BL/SSSTC020
transistor bq
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marking BQ sot-23
Abstract: marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0Pf z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412
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2SC2412
2SA1037
OT-23
BL/SSSTC020
marking BQ sot-23
marking Bq sot23
2SC2412
bq transistor sot23
sot-23 CODE BS
Transistor marking BQ
12V marking code sot 23
marking BS SOT23
sot-23 MARKING CODE BS
transistor 12v 1A NPN
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Transistor marking BQ
Abstract: marking BQ BQ MARKING transistor BQ
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03
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WBFBP-03B
WBFBP-03B
TPC5658NND03
TPA2029NND03
100MHz
TPC5658NND03
Transistor marking BQ
marking BQ
BQ MARKING
transistor BQ
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Transistor marking BQ
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03
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WBFBP-03B
WBFBP-03B
TPC5658NND03
TPA2029NND03
100MHz
Transistor marking BQ
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BF422
Abstract: BF423
Text: UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=250V. *Complementary to BF423. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C
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BF422
BF423.
QW-R201-063
BF422
BF423
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2N7002 spice
Abstract: 2N7002 sot363 2n7002 12 CTA2P1N 2N7002 J-STD-020A MMBT4403 a80 marking code 2n7002 spice model
Text: CTA2P1N COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2P1N NEW PRODUCT Features • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Also Available in Lead Free Version · · · SOT-363
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MMBT4403
2N7002
OT-363
OT-363,
MIL-STD-202,
J-STD-020A
CQ1N7002)
500mA
200mA
2N7002)
2N7002 spice
2N7002 sot363
2n7002 12
CTA2P1N
2N7002
J-STD-020A
a80 marking code
2n7002 spice model
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2N7002
Abstract: MMBT4403 a80 marking code 2N7002-00 2N7002 sot363
Text: SPICE MODEL: CTA2P1N CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 Lead Free/RoHS Compliant Note 1
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MMBT4403
2N7002
OT-363
MIL-STD-202,
DS30296
a80 marking code
2N7002-00
2N7002 sot363
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Untitled
Abstract: No abstract text available
Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N
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HBDM60V600W
MMBT2907A
MMBTA06
OT-363
J-STD-020D
MIL-STD-202,
DS30701
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Untitled
Abstract: No abstract text available
Text: UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=250V. *Complementary to BF423. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C
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BF422
BF423.
QW-R201-063
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A03 transistor
Abstract: No abstract text available
Text: CTA2N1P COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2N1P NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Also Available in Lead Free Version SOT-363
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MMBT4401
BSS84
OT-363
OT-363,
MIL-STD-202,
J-STD-020A
300mA
100mA
MMBT4401)
A03 transistor
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BSS84
Abstract: J-STD-020A MMBT4401 A03 transistor
Text: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Also Available in Lead Free Version SOT-363 A Mechanical Data
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MMBT4401
BSS84
OT-363
OT-363,
MIL-STD-202,
J-STD-020A
MMBT4401)
DS30295
100mA
300mA
J-STD-020A
A03 transistor
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a80 marking code
Abstract: A80G part marking id
Text: CTA2P1N COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2P1N NEW PRODUCT Features • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Also Available in Lead Free Version · · · SOT-363
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MMBT4403
2N7002
OT-363
OT-363,
MIL-STD-202,
J-STD-020A
2N7002)
500mA
200mA
a80 marking code
A80G
part marking id
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Untitled
Abstract: No abstract text available
Text: BQ S92 J \_ FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant enve ope, intended fo r use in relay, high-speed and line-transformer drivers, and as a line current interruptor n telephony
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Untitled
Abstract: No abstract text available
Text: KST4403 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol
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KST4403
OT-23
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Untitled
Abstract: No abstract text available
Text: Central" CMPT2222AE Sem iconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,
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CMPT2222AE
CMPT2222A
OT-23
150mA,
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2PD601A
Abstract: No abstract text available
Text: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59
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711002b
2PB709;
2PB709A
2PD601
2PD601A
-SC59
2PB709Q:
2PB709R:
2PB709S:
2PB709AQ:
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marking IAM transistor sot-23
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSB1218A-RT1 PNP Silicon General Purpose A m plifier Transistor Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package
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MSB1218A-RT1
SC-70/SOT-323
7-inch/3000
b3b72SS
b3b7255
marking IAM transistor sot-23
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transistor bq 17
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN video transistor BFQ221 APPLICATIONS • Primarily intended for buffer stages in high resolution colour monitors. DESCRIPTION PIN i DESCRIPTION 1 base 2 collector 3 emitter f i\.! î f y NPN silicon transistor encapsulated
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BFQ221
transistor bq 17
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CBC 557 C
Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
Text: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB
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philips 22 ah 590
Abstract: npn 2222 transistor 629 08103 BFG198 TRANSISTOR FQ Philips 2222 032
Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic S O T 223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
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BFG198
OT223
7110fl2b
MSA035
OT223.
711002b
philips 22 ah 590
npn 2222 transistor
629 08103
TRANSISTOR FQ
Philips 2222 032
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