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    Transistor marking BQ

    Abstract: marking BQ BQ MARKING transistor BQ
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03


    Original
    PDF WBFBP-03B WBFBP-03B TPC5658NND03 TPA2029NND03 100MHz TPC5658NND03 Transistor marking BQ marking BQ BQ MARKING transistor BQ

    TRANSISTOR FQ

    Abstract: transistor marking fq FS transistor marking marking FQ fq transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03


    Original
    PDF WBFBP-03B WBFBP-03B TPA2029NND03 TPC5658NND03 --50A -50mA 30MHz TPA2029NND03 TRANSISTOR FQ transistor marking fq FS transistor marking marking FQ fq transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03


    Original
    PDF WBFBP-03B WBFBP-03B TPA2029NND03 TPC5658NND03 -50mA 30MHz

    Transistor marking BQ

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03


    Original
    PDF WBFBP-03B WBFBP-03B TPC5658NND03 TPA2029NND03 100MHz Transistor marking BQ