MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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5R380CE
Abstract: IPA50R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor 1 IPP50R380CE, IPA50R380CE IPI50R380CE Description
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IPx50R380CE
IPP50R380CE,
IPA50R380CE
IPI50R380CE
5R380CE
5R38
IPI50R380CE
IPP50R380CE
ID032
5r380
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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TO220 HEATSINK DATASHEET
Abstract: 2SC3832
Text: 2SC3832 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose •Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) 2SC3832 Unit ICBO VCB=500V
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2SC3832
MT-25
100max
400min
10typ
50typ
Pulse14)
TO220 HEATSINK DATASHEET
2SC3832
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Feature
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FMMT459Q
150mA
500mA
625mW
-90mV
120mA
AEC-Q101
DS37019
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT560Q
-500V
-150mA
500mA
100mA
AEC-Q101
DS37020
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Untitled
Abstract: No abstract text available
Text: 2SC3832 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose •Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) (Ta=25°C) Unit ICBO VCB=500V
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2SC3832
Pulse14)
100max
400min
10typ
50typ
MT-25
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NTE198
Abstract: No abstract text available
Text: NTE198 Silicon NPN Transistor High Voltage Power Transistor Description: The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode
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NTE198
NTE198
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NTE394
Abstract: No abstract text available
Text: NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
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NTE394
NTE394
100mA,
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npn transistor 0.1A 400V sot-23
Abstract: npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D
Text: MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44
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MMBTA44
350mW
OT-23
21-Sep-2010
npn transistor 0.1A 400V sot-23
npn high voltage transistor 500v sot23
vbe 10v, vce 500v NPN Transistor
top marking 3d npn
NPN VCEO 500V sot23
MMBTA44
3D NPN 400V
TRANSISTOR MARKING 3D
sot-23 Marking 3D
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Untitled
Abstract: No abstract text available
Text: MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING C B Top View 1 1 3D 2 K E 2 D PACKING INFORMATION
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MMBTA44
OT-23
16-Aug-2012
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2SC5130
Abstract: FM20
Text: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2
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2SC5130
100max
10max
400min
Pulse10)
20typ
30typ
O220F)
2SC5130
FM20
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Untitled
Abstract: No abstract text available
Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30
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2SC4073
Pulse10)
O220F)
100max
400min
10typ
30typ
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2SC5130
Abstract: FM20
Text: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 2SC5130 Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2
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2SC5130
100max
10max
400min
Pulse10)
20typ
30typ
O220F)
2SC5130
FM20
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2SC4297
Abstract: No abstract text available
Text: 2SC4297 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A
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2SC4297
100max
400min
Pulse24)
10typ
105typ
10itter
FM100
2SC4297
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ATV-18
Abstract: 2SC4140
Text: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO V 18(Pulse36) A hFE IC=25mA 400min VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A
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2SC4140
MT-100
100max
Pulse36)
400min
10typ
165typ
ATV-18
2SC4140
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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2SC4140
Abstract: ATV-18 vbe 10v, vce 500v NPN Transistor 110MP
Text: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A
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2SC4140
MT-100
100max
400min
Pulse36)
10typ
165typ
2SC4140
ATV-18
vbe 10v, vce 500v NPN Transistor
110MP
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2SC4297
Abstract: No abstract text available
Text: 2SC4297 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A
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2SC4297
100max
400min
Pulse24)
10typ
105typ
FM100
2SC4297
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2SC4138
Abstract: No abstract text available
Text: 2SC4138 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 4 A VCE(sat) IC=6A, IB=1.2A
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2SC4138
MT-100
100max
400min
Pulse20)
10typ
85typ
2SC4138
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NTE2550
Abstract: NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor
Text: NTE2550 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
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NTE2550
NTE2550
NPN DARLINGTON 10A 500V 50W
400V 10A NPN transistor
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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OCR Scan
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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AA N 12110 transistor
Abstract: 0/AA N 12110 transistor
Text: MARKTECH IN TE RN ATI ONAL "fi? Ì F | s 7 lìcìbS5 ODDG11S TRANSISTOR COUPLER 87D 00115 5799655 M A R K T E C H INTERNATIONAL T-H\ MTPC5800, MTPC5810 GaAlAs INFRARED LED+ PHOTO TRANSISTOR The MTPC5800 and MTPC5810 consist of a photo transistor optically coupled to an aluminum gallium arsenide infrared
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OCR Scan
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ODDG11S
MTPC5800,
MTPC5810
MTPC5800
MTPC5810
TPC5800
AA N 12110 transistor
0/AA N 12110 transistor
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Untitled
Abstract: No abstract text available
Text: .7*113237 0026=137 3 W Ê Fi I '33>~iS S C S - T H O M S O N [M û œ a J tm M M S S G S-TH0MS0N BUX 25 3GE D NPN SILICON TRANSISTOR • HIGH SPEED, HIGH VOLTAGE, HIGH POWER TRANSISTOR ■ SWITCHING AND AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Sym bol
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OCR Scan
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T-33-15
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