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    TRANSISTOR 0122 Search Results

    TRANSISTOR 0122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 0122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BFT93 Q62702-F1063 OT-23 235b05 G122211 900MHz 235fc

    Transistor BFr 99

    Abstract: No abstract text available
    Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1219 OT-23 flE35b05 900MHz Transistor BFr 99

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF Q62702-F1086 OT-23 G122D45 fl235bà 0122Q IS21l2= 900MHz G1S5047

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s


    OCR Scan     		PDF Q62702-F1681 OT-323 0122E04 900MHz D1525D5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-F1062 OT-23 BFT92 H35bD5 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1049 OT-23 900MHz

    th 2267

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)


    OCR Scan     		PDF 3906S 100mA 3904S Q62702-A1202 OT-363 flE35b05 Q1225S2 th 2267

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF 900MHz Q62702-F1491 OT-323 fl235bGS D1220Ã

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    OCR Scan     		PDF 900MHz Q62702-F1492 OT-323 aS35bD5

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


    OCR Scan     		PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460

    TS 11178

    Abstract: No abstract text available
    Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1346 OT-23 B535bQ5 BFR194 900MHz TS 11178

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated


    OCR Scan     		PDF 900MHz Q62702-F1531 OT-363 BFS480 fl235b D1E5173

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code


    OCR Scan     		PDF Q62702-F1316 OT-23 fl235L 900MHz

    q1221

    Abstract: No abstract text available
    Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f j = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1= B Package H


    OCR Scan     		PDF 900MHz Q62702-F1510 OT-323 535b05 BFR193W IS21I2= 23SL0S q1221

    2sc5143 transistor horizontal toshiba

    Abstract: transistor 0122
    Text: 2SC5143 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 7<;r m a * HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit in mm 15.5 + 0.5 HIGH SPEED SWITCHING APPLICATIONS • High Voltage : V ^ b o -1700V •


    OCR Scan     		PDF 2SC5143 -1700V 2sc5143 transistor horizontal toshiba transistor 0122

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1 .2 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1315 OT-23 053SbDS BFR182 6235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Top View Morking on SOI-db.} pockooe (for example W1s corresponds to pin I ol device Direction of Unreeling


    OCR Scan     		PDF BFS17S Q62702-F1645 OT-363 B235b05 235b05 012215t. G125157

    bfr193

    Abstract: No abstract text available
    Text: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f j = 8GHz F - 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Q62702-F1218 Pin Configuration


    OCR Scan     		PDF 900MHz Q62702-F1218 OT-23 Junc01 0535bGS P155154 bfr193

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E


    OCR Scan     		PDF Q68000-A8320 OT-23 aE35bD5 D1EE571 235bD5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol


    OCR Scan     		PDF Q6800-A6477 OT-23 fi235b05 012250e fl235b05

    2SK681A

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SK681A N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm


    OCR Scan     		PDF 2SK681A 2SK681A,

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF Q62702-F1493 OT-323 535bDS 900MHz 235L05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1494 OT-323 23SbQ5